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  140.0mhz Datasheet PDF File

For 140.0mhz Found Datasheets File :: 8384    Search Time::3.563ms    
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    IRF7413 7413

International Rectifier
Part No. IRF7413 7413
OCR Text ...GS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7413 1000...
Description Power MOSFET(Vdss=30V, Id=12A)
Power MOSFET(Vdss=30V/ Id=12A)

File Size 121.55K  /  8 Page

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    IRF7416 IRFB7416 IRF7416TR

International Rectifier
Part No. IRF7416 IRFB7416 IRF7416TR
OCR Text ...0 80 VG S = -10 V 100 120 140 160 A -VG S , Ga te-to-S o urce V oltage (V ) T J , Junction T emperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRF7416 4000 -V ...
Description Power MOSFET(Vdss=-30V/ Rds(on)=0.02ohm)
Power MOSFET(Vdss=-30V, Rds(on)=0.02ohm)
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package

File Size 112.47K  /  9 Page

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    IRFP27N60K

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFP27N60K
OCR Text ...0 60 80 V GS = 10V 100 120 140 160 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFP27N60K...
Description Power MOSFET(Vdss=600V, Rds(on)typ.=180mohm, Id=27A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rdson)典\u003d 180mohm,身份证\u003d 27A条)
Power MOSFET(Vdss=600V / Rds(on)typ.=180mohm / Id=27A)

File Size 89.84K  /  8 Page

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    IRLL014N IRLL014NTR

IRF[International Rectifier]
Part No. IRLL014N IRLL014NTR
OCR Text ...0 80 V G S = 1 0V 100 120 140 160 A V G S , G ate-to -So urce Voltag e (V) T J , J unc tion T em perature (C ) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 ...
Description Advanced Process Technology
HEXFET Power MOSFET

File Size 154.63K  /  9 Page

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    IRLMS2002 IRLMS2002TR

International Rectifier
Part No. IRLMS2002 IRLMS2002TR
OCR Text ...S = 4.5V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRLMS2002 20...
Description Ultra Low On-Resistance
20V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package

File Size 92.32K  /  8 Page

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    K6E0808C1C K6E0808C1C-12 K6E0808C1C-15 K6E0808C1C-20 K6E0808C1C-C K6E0808C1C-JC12

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6E0808C1C K6E0808C1C-12 K6E0808C1C-15 K6E0808C1C-20 K6E0808C1C-C K6E0808C1C-JC12
OCR Text ... -2 -2 2.4 - Max 2 2 165 150 140 40 2 0.4 3.95 Unit A A mA mA mA V V V CAPACITANCE*(TA=25C, f=1.0MHz) Item Input/Output Capacitance Input Capacitance Symbol CI/O CIN Test Conditions VI/O=0V VIN=0V MIN Max 8 7 Unit pF pF * Ca...
Description 32K X 8 STANDARD SRAM, 12 ns, PDSO28
32Kx8 Bit High Speed CMOS Static RAM 32Kx8位高速CMOS静态RAM

File Size 166.89K  /  8 Page

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    MAX187 MAX187ACPA MAX187ACWE MAX187AEPA MAX187AEWE MAX187AMJA MAX187BCPA MAX187BCWE MAX187BEPA MAX187BEWE MAX187BMJA MAX

MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Part No. MAX187 MAX187ACPA MAX187ACWE MAX187AEPA MAX187AEWE MAX187AMJA MAX187BCPA MAX187BCWE MAX187BEPA MAX187BEWE MAX187BMJA MAX187CCPA MAX187CCWE MAX187CEPA MAX187CEWE MAX189ACPA MAX189ACWE MAX189AEPA MAX189AEWE MAX189AMJA MAX189BCPA MAX189BCWE MAX189BEPA MAX189BEWE MAX189BMJA MAX189CCPA MAX189CCWE MAX189CEPA MAX189CEWE MAX187BC_ MAX189 MAX189BC_D MAX189BC/D
OCR Text ...4.050 4.040 4.096 4.116 4.132 4.140 4.150 30 50 60 80 ppm/C mA V 16 0 to VREF V pF tAPR tCONV tACQ External clock, 4MHz, 13 clocks 10 <50 5....0MHz, external clock (50% duty cycle); MAX187--internal reference: VREF = 4.096V, 4.7F capacitor at ...
Description 5V, Low-Power, 12-Bit Serial ADCs

File Size 175.60K  /  20 Page

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    IRF640N IRF640NL IRF640NS

IRF[International Rectifier]
Part No. IRF640N IRF640NL IRF640NS
OCR Text ... VGS = 10V 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF640N/S...
Description Power MOSFET(Vdss=200V/ Rds(on)=0.15ohm/ Id=18A)
Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)

File Size 153.14K  /  11 Page

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    IRFR15N20D IRFU15N20D

IRF[International Rectifier]
Part No. IRFR15N20D IRFU15N20D
OCR Text ...or 10 seconds Max. 17 12 68 140 3.0 0.96 30 8.3 -55 to + 175 300 (1.6mm from case ) Units A W W/C V V/ns C Thermal Resistance...0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 160V, = 1.0MHz --- VGS = 0V, VDS = 0V ...
Description SMPS MOSFET

File Size 180.49K  /  10 Page

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    IRHNJ53230 IRHNJ58230 IRHNJ54230 IRHNJ57230

IRF[International Rectifier]
Part No. IRHNJ53230 IRHNJ58230 IRHNJ54230 IRHNJ57230
OCR Text ...S = 12V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiatio...
Description 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package
200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)

File Size 123.99K  /  8 Page

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