20-200s pdf Datasheet P12 Full Text Search --- IC-ON-LINE


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20-200s Datasheet PDF File

For 20-200s Found Datasheets File :: 1658 Search Time::1.344ms
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				Advanced Analogic Technologies
Part No.	AAT3175 AAT3175IWP-T1
OCR Text	...0mV/div) VOUT (100mV/div) 25 20 15 10 5 0 VSINK (100mV/div) 2.5 2.8 3.0 3.3 3.5 3.8 4.0 4.3 4.5 Time (500ns/div) Input Voltage (V) EN/SET Latch Timeout vs. Input Voltage EN/SET Latch Timeout (s) ...
Description	High Efficiency 1X/1.5X/2X Charge Pump For White LED Flash Applications
File Size	240.69K / 12 Page	View it Online	Download Datasheet

				AAT[Advanced Analog Technology, Inc.] Advanced Analogic Technologies
Part No.	AAT3171IWP-T1 AAT3171
OCR Text	...fficiency (%) 70 60 50 40 30 20 10 0 ILED = 150mA EN (2V/div) ILED = 300mA VOUT (2V/div) VSINK (1V/div) IIN (200mA/div) 2.7 2.8...200s/div) Turn-On to 1.5X Mode (VIN = 3.2V; ILED = 150mA) Turn-On to 1X Mode (VIN = 4.2V; IL...
Description	High Current, High Efficiency Charge Pump with Auto-Timer
File Size	369.51K / 19 Page	View it Online	Download Datasheet

				ETRON[Etron Technology, Inc.]
Part No.	EM566168
OCR Text	... - - - 25 25 25 - - - - - - - - 20 - - - ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns AC Test Condition ...200s) Active CE2=VIH, CE1# =VIH or UB#, LB# =VIH CE2=VIL Power Up Sequence CE1# =VIL,...
Description	1M x 16 Pseudo SRAM
File Size	144.24K / 12 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K1S32161CC K1S32161CC-FI70 K1S32161CC-I
OCR Text	...70ns1) Max 70 70 35 70 25 25 25 20 25 - Units tRC tAA tCO tOE tBA tLZ tBLZ tOLZ tHZ tBHZ tOHZ tOH tPC tPA tWC tCW tAS tAW tBW tWP tWR tWHZ tDW tDH tOW 70 10 10 5 0 0 0 5 25 70 60 0 60 60 551) 0 0 30 0 5 ns ns ns ns ns ns ns ns n...
Description	2Mx16 bit Page Mode Uni-Transistor Random Access Memory
File Size	184.44K / 10 Page	View it Online	Download Datasheet

				Advanced Analogic Technologies, Inc.
Part No.	AAT3237IGU-2.0-T1 AAT3237IGU-2.3-T1 AAT3237IGU-2.5-T1 AAT3237IGU-2.7-T1 AAT3237IGU-2.8-T1 AAT3237IGU-2.9-T1 AAT3237IGU-3.3-T1 AAT3237IGU-2.85-T1 AAT3237IJS-1.2-T1 AAT3237IGU-3.0-T1 AAT3237IGU-1.5-T1 AAT3237IGU-1.8-T1 AAT3237IGU-3.5-T1 AAT3237IGU-1.2-T1 AAT3237IJS-1.8-T1 AAT3237IJS-2.7-T1 AAT3237IJS-3.5-T1
OCR Text	...pout Voltage vs. Temperature 3.20 Dropout Characteristics 540 Dropout Voltage (mV) 480 420 360 300 240 180 120 60 0 IL = 300...200s/div) Line Transient Response VIN (2V/div) 6 5 3.25 POK Output Response Input Voltage...
Description	300mA MicroPowerLDO with PowerOK ⑩微功300mA的LDO稳压器与PowerOK 300mA MicroPowerLDO with PowerOK ⑩微功00mA的LDO稳压器与PowerOK 300mA MicroPower??LDO with PowerOK
File Size	162.71K / 13 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F1208Q0A-XXB0 K9F1208Q0B K9F1208Q0A-DIB0 K9F1208Q0A-DCB0 K9F1208Q0A-HCB0 K9F1208Q0A-HIB0 K9F1208U0A-DCB0 K9F1208U0A-DIB0 K9F1208U0A-FCB0 K9F1208U0A-FIB0 K9F1208U0A-HCB0 K9F1208U0A-HIB0 K9F1208U0A-VIB0 K9F1216U0A-YCB0 K9F1216U0A-DIB0 K9F1216U0A-HIB0 K9F1216U0A-PCB0 K9F1216Q0A-HIB0 K9F1216Q0A-DCB0 K9F1216Q0A-HCB0
OCR Text	...axed Condition tWC 45 80 tWH 15 20 tWP 25 60 tRC 50 80 tREH 15 20 tRP 25 60 UNIT : ns tREA 30 60 tCEA 45 75 Sincerely, chwoosun@sec.sa...200s(Typ.) - Block Erase Time : 2ms(Typ.) * Command/Address/Data Multiplexed I/O Port * Hardware Dat...
Description	64M x 8 bit NAND flash memory, 2.7 - 3.6V 512Mb/256Mb 1.8V NAND Flash Errata 64M x 8 bit NAND flash memory, 1.70 - 1.95V 32M x 16 bit NAND flash memory, 2.7 - 3.6V 32M x 16 bit NAND flash memory, 1.70 - 1.95V
File Size	805.26K / 45 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	K9F1208U0A K9F1216U0A
OCR Text	...50 15 25 30 45 Relaxed value 60 20 40 60 20 40 40 55 New definition of the number of invalid blocks is added. (Minimum 1004 valid blocks are...200s(Typ.) - Block Erase Time : 2ms(Typ.) * Command/Address/Data Multiplexed I/O Port * Hardware Dat...
Description	64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
File Size	957.56K / 45 Page	View it Online	Download Datasheet

				Powersem GmbH
Part No.	PSCH85
OCR Text	...122 - 9764-0 Fax.: 09122 - 9764-20 2003 POWERSEM reserves the right to change limits, test conditions and dimensions PSCH 85 Symbol ...200s, VR = 100V -di/dt = 10A/s, dv/dt = 15V/s, VD = 2/3 VDRM per thyristor; sine 180el per module pe...
Description	Single Phase Half Controlled Bridges with freewheeling diode
File Size	200.84K / 3 Page	View it Online	Download Datasheet

				Powersem GmbH
Part No.	PSCH75
OCR Text	...122 - 9764-0 Fax.: 09122 - 9764-20 2005 POWERSEM reserves the right to change limits, test conditions and dimensions PSCH 75 Symbol ...200s, VR = 100V -di/dt = 10A/s, dv/dt = 15V/s, VD = 2/3 VDRM per thyristor; sine 180el per module pe...
Description	Single Phase Half Controlled Bridges with freewheeling diode
File Size	184.67K / 3 Page	View it Online	Download Datasheet

				Powersem GmbH
Part No.	PSCH125
OCR Text	...122 - 9764-0 Fax.: 09122 - 9764-20 2003 POWERSEM reserves the right to change limits, test conditions and dimensions PSCH 125 Symbol...200s, VR = 100V -di/dt = 10A/s, dv/dt = 15V/s, VD = 2/3 VDRM per thyristor; sine 180el per module pe...
Description	Single Phase Half Controlled Bridges with freewheeling diode
File Size	203.24K / 3 Page	View it Online	Download Datasheet

For 20-200s Found Datasheets File :: 1658 Search Time::1.344ms
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