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飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF6S18100NBR1
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| OCR Text |
...quency band (1805 - 1880 mhz or 1930 - 1990 mhz) power gain ? 14.5 db drain efficiency ? 49% gsm edge application ? typical gsm edge performance: v dd = 28 volts, i dq = 700 ma, p out = 40 watts avg., full frequency band (1805 - 1880 mh... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 射频功率场效应晶体管N沟道增强型MOSFET的外
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| File Size |
703.35K /
20 Page |
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MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
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| Part No. |
MRF5S19150R3 MRF5S19150 MRF5S19150SR3
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| OCR Text |
...= 32 W Avg, IDQ = 1400 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 32 W Avg, IDQ = 1400 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) Third Order Int... |
| Description |
MRF5S19150, MRF5S19150R3, MRF5S19150S, MRF5S19150SR3 1990 MHz, 32 W, 28 V Lateral N-Channel RF Power MOSFETs
RF Power Field Effect Transistors
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| File Size |
613.99K /
12 Page |
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Motorola Semiconductor Products
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| Part No. |
MRF7S19100N
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| OCR Text |
...lications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications. * Typical Single - Carrier W - CDMA Performan... |
| Description |
1930?1990 MHz, 29 W Avg., 28 V Single W?CDMA Lateral N?Channel RF Power MOSFETs
From old datasheet system
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| File Size |
529.85K /
16 Page |
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it Online |
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Agilent (Hewlett-Packard)
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| Part No. |
ACMD-7401
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| OCR Text |
..., 5 x 5 mm footprint * Rx Band: 1930 - 1990 MHz typical performance: Description The ACMD-7401 is a miniaturized duplexer designed using Agilent's Film Bulk Acoustic Resonator (FBAR) technology. The ACMD7401 is the first duplexer built with... |
| Description |
ACMD-7401 · 5 x 5 mm FBAR Duplexer for US PCS Band
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| File Size |
307.95K /
12 Page |
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it Online |
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ERICSSON[Ericsson]
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| Part No. |
PTF10154
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| OCR Text |
...
- WAVE LEN GTH
Z Source
1930 MHz 1990 MHz
0.0 TOW AR D LOAD G TH S
G S
1930 MHz 1990 MHz
Z Load
Frequency
GHz 1930 1960 1990 R
Z Source W
jX 3.0 2.6 1.2 R 1.4 1.4 1.4 2.9 2.5 2.1
Z Load W
jX -0.2 -0.9 -1.5
0... |
| Description |
85 Watts/ 1.93-1.99 GHz GOLDMOS Field Effect Transistor
85 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor 85瓦，1.93-1.99 GHz的GOLDMOS场效应晶体管
85 Watts 1.93-1.99 GHz GOLDMOS Field Effect Transistor
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| File Size |
255.49K /
5 Page |
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it Online |
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MACOM[Tyco Electronics]
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| Part No. |
PA1166
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| OCR Text |
1930-1990 MHz.
28v. GaAs Ultra Linear Power
Features (typical values)
High IP3 ............................................. +53.0 dBm. Low NF ....................................................... 3.0 dB. High Output Power ............. |
| Description |
28v. GaAs Ultra Linear Power
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| File Size |
58.07K /
2 Page |
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it Online |
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