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Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
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| Part No. |
APT6025BVFR
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| OCR Text |
...3471 4 Starting T = +25C, L = 4.16mh, R = 25, Peak I = 25A j G L 5 I -I [Cont.], di/ = 100A/s, V S D DD VDSS, Tj 150C, RG = 2.0, dt
VR = 200V.
APT Reserves the right to change, without notice, the specifications and information conta... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 600V 25A 0.250 Ohm
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| File Size |
69.66K /
4 Page |
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it Online |
Download Datasheet
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Mitsubishi Electric Corporation
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| Part No. |
M30222FG M30222FGGP
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| OCR Text |
... ............. 62.5ns (f(x in )=16mh z ) ? supply voltage ............................................ 2.7 to 5.5v ? low power consumption ............................. tbd ? interrupts ..................................................... ... |
| Description |
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
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| File Size |
1,908.60K /
237 Page |
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it Online |
Download Datasheet |
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SONY
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| Part No. |
ILX553A
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| OCR Text |
...ity of 600 dpi at high speed of 16mh z . features ? number of effective pixels: 5150 pixels pixel size: 7m 7m (7m pitch) clamp circuit is on-chip ultra high sensitivity/ultra low lag maximum data rate: 16mhz single 12v power su... |
| Description |
5150-pixel CCD Linear Sensor (B/W)
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| File Size |
110.41K /
12 Page |
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it Online |
Download Datasheet |
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MICROSEMI POWER PRODUCTS GROUP
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| Part No. |
APT8020B2FLLG
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| OCR Text |
... starting t j = +25c, l = 4.16mh, r g = 25 ? , peak i l = 38a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - i d 38a di / dt 700a/s v r 800 t j 150 c... |
| Description |
38 A, 800 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
245.11K /
5 Page |
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it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT8075BVFR
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| OCR Text |
...3471 4 Starting T = +25C, L = 4.16mh, R = 25, Peak I = 25A j G L 5 I -I [Cont.], di/ = 100A/s, V S D DD VDSS, Tj 150C, RG = 2.0, dt
VR = 200V.
APT Reserves the right to change, without notice, the specifications and information conta... |
| Description |
POWER MOS V 800V 12A 0.750 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
69.90K /
4 Page |
View
it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT8056BVFR
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| OCR Text |
...471 4 Starting T = +25C, L = 10.16mh, R = 25, Peak I = 16A j G L 5 I -I [Cont.], di/ = 100A/s, V S D DD VDSS, Tj 150C, RG = 2.0, dt
VR = 200V.
APT Reserves the right to change, without notice, the specifications and information conta... |
| Description |
POWER MOS V 800V 16A 0.560 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
63.50K /
4 Page |
View
it Online |
Download Datasheet |
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