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Hynix Semiconductor, Inc.
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| Part No. |
HYMP525P72BP4-S5 HYMP512P72BP4-S5
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| OCR Text |
...oprec harge is selected and ba0-ban defines the bank to be precharged. if ap is low, autoprecharge is disabled. during a precharge command cycle., ap is used in con- junction with ba0-ban to control which bank(s) to precharge. if ap is hi... |
| Description |
256M X 72 DDR DRAM MODULE, 0.4 ns, DMA240 ROHS COMPLIANT, DIMM-240
128M X 72 DDR DRAM MODULE, 0.4 ns, DMA240 ROHS COMPLIANT, DIMM-240
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| File Size |
324.90K /
26 Page |
 View
it Online |
Download Datasheet
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Hynix Semiconductor, Inc.
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| Part No. |
HYMP164U64AP6-Y5 HYMP164U64AP6-S5 HYMP112U64AP8-C4 HYMP112U72AP8-Y5 HYMP112U64AP8-Y5 HYMP112U72AP8-C4
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| OCR Text |
...toprecharge is selected and ba0-ban defines the bank to be precharged. if ap is low, aut oprecharge is disabled. during a precharge command cycle., ap is used in conjunction with ba0-ban to control which bank(s) to precharge. if ap is h... |
| Description |
64M X 64 DDR DRAM MODULE, 0.45 ns, DMA240 ROHS COMPLIANT, DIMM-240
64M X 64 DDR DRAM MODULE, 0.4 ns, DMA240 ROHS COMPLIANT, DIMM-240
128M X 64 DDR DRAM MODULE, 0.5 ns, DMA240 ROHS COMPLIANT, DIMM-240
128M X 72 DDR DRAM MODULE, 0.45 ns, DMA240 ROHS COMPLIANT, DIMM-240
128M X 64 DDR DRAM MODULE, 0.45 ns, DMA240 ROHS COMPLIANT, DIMM-240
128M X 72 DDR DRAM MODULE, 0.5 ns, DMA240 ROHS COMPLIANT, DIMM-240
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| File Size |
302.16K /
29 Page |
View
it Online |
Download Datasheet |
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Hynix Semiconductor, Inc.
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| Part No. |
HYMP164S64AP6-Y5 HYMP112S64AP6-Y5
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| OCR Text |
...toprecharge is selected and ba0-ban defines the bank to be precharged. if ap is low, autoprecharge is disabled. during a precharge command cycle., ap is used in conjunction with ba0-ban to control which bank(s) to precharge. if ap is hig... |
| Description |
64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
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| File Size |
276.91K /
23 Page |
View
it Online |
Download Datasheet |
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Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
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| Part No. |
HYMP125S64CP6-S5 HYMP125S64CP6-S6 HYMP125S64CP6-Y5
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| OCR Text |
...toprecharge is selected and ba0-ban defines the bank to be precharged. if ap is low, autoprecharge is disabled. during a precharge command cycle., ap is used in conjunction with ba0-ban to control which bank(s) to precharge. if ap is hig... |
| Description |
256M X 64 DDR DRAM MODULE, 0.4 ns, DMA200 ROHS COMPLIANT, SODIMM-200
256M X 64 DDR DRAM MODULE, 0.45 ns, DMA200 ROHS COMPLIANT, SODIMM-200
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| File Size |
532.29K /
23 Page |
View
it Online |
Download Datasheet |
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Hynix Semiconductor, Inc.
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| Part No. |
HYMP125P72BMP4L-Y5
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| OCR Text |
...oprec harge is selected and ba0-ban defines the bank to be precharged. if ap is low, autoprecharge is disabled. during a precharge command cycle., ap is used in con- junction with ba0-ban to control which bank(s) to precharge. if ap is hi... |
| Description |
|
| File Size |
329.75K /
22 Page |
View
it Online |
Download Datasheet |
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Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
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| Part No. |
HYMP125P72AP4-Y5 HYMP112P72AP8-Y5 HYMP112P72AP8-C4 HYMP125P72AP4-C4 HYMP351P72AMP4-C4
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| OCR Text |
...pre- charge is selected and ba0-ban defines the bank to be precharged. if ap is lo w, autoprecharge is dis- abled. during a precharge command cycle., ap is us ed in conjunction with ba0-ban to control which bank(s) to precharge. if ap is ... |
| Description |
256M X 72 DDR DRAM MODULE, 0.45 ns, DMA240 ROHS COMPLIANT, DIMM-240
128M X 72 DDR DRAM MODULE, 0.45 ns, DMA240 ROHS COMPLIANT, DIMM-240
128M X 72 DDR DRAM MODULE, 0.5 ns, DMA240 ROHS COMPLIANT, DIMM-240
256M X 72 DDR DRAM MODULE, 0.5 ns, DMA240
512M X 72 DDR DRAM MODULE, 0.5 ns, DMA240
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| File Size |
264.96K /
24 Page |
View
it Online |
Download Datasheet |
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Hynix Semiconductor, Inc.
|
| Part No. |
HYMP112S64P8-C4 HYMP112S64P8-Y5
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| OCR Text |
...toprecharge is selected and ba0-ban defines the bank to be precharged. if ap is low, autoprecharge is disabled. during a precharge command cycle., ap is used in conjunction with ba0-ban to control which bank(s) to precharge. if ap is hig... |
| Description |
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
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| File Size |
249.93K /
20 Page |
View
it Online |
Download Datasheet |
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Hynix Semiconductor, Inc.
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| Part No. |
HYMP112R72P8-C4
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| OCR Text |
...toprecharge is selected and ba0-ban defines the bank to be precharged. if ap is low, autoprecharge is disabled. during a precharge command cycle., ap is used in conjunction with ba0-ban to control which bank(s) to precharge. if ap is hi... |
| Description |
128M X 72 DDR DRAM MODULE, 0.5 ns, DMA240 ROHS COMPLIANT, DIMM-240
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| File Size |
529.60K /
24 Page |
View
it Online |
Download Datasheet |
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|
Hynix Semiconductor, Inc.
|
| Part No. |
HYMP112R72AP8-C4
|
| OCR Text |
...pre- charge is selected and ba0-ban defines the bank to be precharged. if ap is lo w, autoprecharge is dis- abled. during a precharge command cycle., ap is us ed in conjunction with ba0-ban to control which bank(s) to precharge. if ap is ... |
| Description |
128M X 72 DDR DRAM MODULE, 0.5 ns, DMA240 ROHS COMPLIANT, DIMM-240
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| File Size |
281.35K /
24 Page |
View
it Online |
Download Datasheet |
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Hynix Semiconductor, Inc.
|
| Part No. |
HMT125S6AFP6C-S5 HMT125S6AFP6C-S6
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| OCR Text |
...toprecharge is selected and ba0-ban defines the bank to be precharged. if ap is low, autoprecharge is disabled. during a precharge command cycle, ap is used in conjunction with ba0-ban to control which bank(s) to precharge. if ap is high... |
| Description |
256M X 64 DDR DRAM MODULE, 20 ns, DMA204 LEAD FREE, SODIMM-204
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| File Size |
617.86K /
51 Page |
View
it Online |
Download Datasheet |
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