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important notice dear customer, on 7 february 2017 the former nxp standard product business became a new compa ny with the tradename nexperia . nexperia is an industry leading supplier of discrete, logic and pow ermos semiconductors with its focus on the automotive, industrial, computing, consume r and wearable application markets in data sheets and application notes which still contain nxp or philips se miconductors references, use the references to nexperia, as shown below. instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors .philips.com/ , use http://www.nexperia.com instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) replace the copyright notice at the bottom of each page or elsewher e in the document, depending on the version, as shown below: - ? nxp n.v. (year). all rights reserved or ? koninklijke philips electronics n.v. (year). all rights reserved should be replaced with: - ? nexperia b.v. (year). all rights reserved . if you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com ). thank you for your cooperation and understanding, kind regards, team nexperia downloaded from: http:///
1. product pro?e 1.1 general description general-purpose zener diodes in a sot23 (to-236ab) small surface-mounted device (smd) plastic package. 1.2 features 1.3 applications general regulation functions 1.4 quick reference data [1] pulse test: t p 300 s; ? 0.02. [2] t p = 100 s; square wave; t j =25 c prior to surge bzb84 series dual zener diodes rev. 03 ?9 june 2009 product data sheet non-repetitive peak reverse power dissipation: 40 w small plastic package suitable for surface-mounted design total power dissipation: 300 mw dual common anode con?guration two tolerance series: b= 2%andc= 5% aec-q101 quali?ed wide working voltage range: nominal 2.4 v to 75 v (e24 range) table 1. quick reference data symbol parameter conditions min typ max unit per diode v f forward voltage i f =10ma [1] - - 0.9 v p zsm non-repetitive peak reverse power dissipation [2] --4 0w downloaded from: http:///
bzb84_ser_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 ?9 june 2009 2 of 14 nxp semiconductors bzb84 series dual zener diodes 2. pinning information 3. ordering information [1] the series consists of 74 types with nominal working voltages from 2.4 v to 75 v. 4. marking table 2. pinning pin description simpli?d outline graphic symbol 1 cathode (diode 1) 2 cathode (diode 2) 3 common anode 12 3 006aaa154 12 3 table 3. ordering information type number package name description version bzb84-b2v4 tobzb84-c75 [1] - plastic surface-mounted package; 3 leads sot23 table 4. marking codes type number marking code [1] type number marking code [1] bzb84-b2v4 v9* bzb84-c2v4 u9* bzb84-b2v7 va* bzb84-c2v7 ua* bzb84-b3v0 vb* bzb84-c3v0 ub* bzb84-b3v3 vc* bzb84-c3v3 uc* bzb84-b3v6 vd* bzb84-c3v6 ud* bzb84-b3v9 ve* bzb84-c3v9 ue* bzb84-b4v3 vf* bzb84-c4v3 uf* bzb84-b4v7 vg* bzb84-c4v7 ug* bzb84-b5v1 vh* bzb84-c5v1 uh* bzb84-b5v6 vk* bzb84-c5v6 uk* bzb84-b6v2 vl* bzb84-c6v2 ul* bzb84-b6v8 vm* bzb84-c6v8 um* bzb84-b7v5 vn* bzb84-c7v5 un* bzb84-b8v2 vp* bzb84-c8v2 up* bzb84-b9v1 vr* bzb84-c9v1 ur* downloaded from: http:///
bzb84_ser_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 ?9 june 2009 3 of 14 nxp semiconductors bzb84 series dual zener diodes [1] * = -: made in hong kong * = p: made in hong kong * = t: made in malaysia * = w: made in china 5. limiting values bzb84-b10 vs* bzb84-c10 us* bzb84-b11 vt* bzb84-c11 ut* bzb84-b12 vu* bzb84-c12 uu* bzb84-b13 vv* bzb84-c13 uv* bzb84-b15 vw* bzb84-c15 uw* bzb84-b16 pt* bzb84-c16 pb* bzb84-b18 pu* bzb84-c18 pc* BZB84-B20 rp* bzb84-c20 rq* bzb84-b22 pv* bzb84-c22 pd* bzb84-b24 pw* bzb84-c24 pe* bzb84-b27 px* bzb84-c27 pf* bzb84-b30 py* bzb84-c30 pg* bzb84-b33 pz* bzb84-c33 ph* bzb84-b36 ra* bzb84-c36 pj* bzb84-b39 rb* bzb84-c39 pk* bzb84-b43 rc* bzb84-c43 pl* bzb84-b47 rd* bzb84-c47 pm* bzb84-b51 re* bzb84-c51 pn* bzb84-b56 rf* bzb84-c56 pp* bzb84-b62 rg* bzb84-c62 pq* bzb84-b68 rh* bzb84-c68 pr* bzb84-b75 rj* bzb84-c75 ps* table 4. marking codes continued type number marking code [1] type number marking code [1] table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit per diode i f forward current - 200 ma i zsm non-repetitive peak reverse current [1] - see t ab le 8 , 9 , 10 and 11 p zsm non-repetitive peak reverse power dissipation [1] -4 0w downloaded from: http:///
bzb84_ser_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 ?9 june 2009 4 of 14 nxp semiconductors bzb84 series dual zener diodes [1] t p = 100 s; square wave; t j =25 c prior to surge [2] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated and standard footprint. 6. thermal characteristics [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. [2] soldering points at pins 1 and 2. 7. characteristics [1] pulse test: t p 300 s; ? 0.02. per device p tot total power dissipation t amb 25 c [2] - 300 mw t j junction temperature - 150 c t amb ambient temperature ? 55 +150 c t stg storage temperature ? 65 +150 c table 5. limiting values continued in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit table 6. thermal characteristics symbol parameter conditions min typ max unit per device; single diode loaded r th(j-a) thermal resistance from junction to ambient in free air [1] - - 417 k/w r th(j-sp) thermal resistance from junction to solder point [2] - - 100 k/w table 7. characteristics t j =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit per diode v f forward voltage i f =10ma [1] - - 0.9 v downloaded from: http:///
bzb84_ser_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 ?9 june 2009 5 of 14 nxp semiconductors bzb84 series dual zener diodes [1] f = 1 mhz; v r =0v [2] t p = 100 s; square wave; t j =25 c prior to surge table 8. characteristics per type; bzb84-b2v4 to bzb84-b24 t j =25 c unless otherwise speci?ed. bzb84-bxxx working voltage v z (v) differential resistance r dif ( ) reverse current i r ( a) temperature coef?ient s z (mv/k) diodecapacitance c d (pf) [1] non-repetitive peak reverse current i zsm (a) [2] i z =5ma i z =1ma i z =5ma i z =5ma min max max max max v r (v) min max max max 2v4 2.35 2.45 600 100 50 1 ? 3.5 0 450 6.0 2v7 2.65 2.75 600 100 20 1 ? 3.5 0 450 6.0 3v0 2.94 3.06 600 95 10 1 ? 3.5 0 450 6.0 3v3 3.23 3.37 600 95 5 1 ? 3.5 0 450 6.0 3v6 3.53 3.67 600 90 5 1 ? 3.5 0 450 6.0 3v9 3.82 3.98 600 90 3 1 ? 3.5 0 450 6.0 4v3 4.21 4.39 600 90 3 1 ? 3.5 0 450 6.0 4v7 4.61 4.79 500 80 3 2 ? 3.5 0.2 300 6.0 5v1 5.00 5.20 480 60 2 2 ? 2.7 1.2 300 6.0 5v6 5.49 5.71 400 40 1 2 ? 2.0 2.5 300 6.0 6v2 6.08 6.32 150 10 3 4 0.4 3.7 200 6.0 6v8 6.66 6.94 80 15 2 4 1.2 4.5 200 6.0 7v5 7.35 7.65 80 15 1 5 2.5 5.3 150 4.0 8v2 8.04 8.36 80 15 0.70 5 3.2 6.2 150 4.0 9v1 8.92 9.28 100 15 0.50 6 3.8 7.0 150 3.0 10 9.80 10.20 150 20 0.20 7 4.5 8.0 90 3.0 11 10.80 11.20 150 20 0.10 8 5.4 9.0 85 2.5 12 11.80 12.20 150 25 0.10 8 6.0 10.0 85 2.5 13 12.70 13.30 170 30 0.10 8 7.0 11.0 80 2.5 15 14.70 15.30 200 30 0.05 10.5 9.2 13.0 75 2.0 16 15.70 16.30 200 40 0.05 11.2 10.4 14.0 75 1.5 18 17.60 18.40 225 45 0.05 12.6 12.4 16.0 70 1.5 20 19.6 20.4 225 55 0.05 14.0 14.4 18.0 60 1.5 22 21.6 22.4 250 55 0.05 15.4 16.4 20.0 60 1.25 24 23.5 24.5 250 70 0.05 16.8 18.4 22.0 55 1.25 downloaded from: http:///
bzb84_ser_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 ?9 june 2009 6 of 14 nxp semiconductors bzb84 series dual zener diodes [1] f = 1 mhz; v r =0v [2] t p = 100 s; square wave; t j =25 c prior to surge table 9. characteristics per type; bzb84-b27 to bzb84-b75 t j =25 c unless otherwise speci?ed. bzb84-bxxx working voltage v z (v) differential resistance r dif ( ) reverse current i r ( a) temperature coef?ient s z (mv/k) diodecapacitance c d (pf) [1] non-repetitive peak reverse current i zsm (a) [2] i z =2ma i z = 0.5 ma i z =2ma i z =2ma min max max max max v r (v) min max max max 27 26.5 27.5 300 80 0.05 18.9 21.4 25.3 50 1.00 30 29.4 30.6 300 80 0.05 21.0 24.4 29.4 50 1.00 33 32.3 33.7 325 80 0.05 23.1 27.4 33.4 45 0.90 36 35.3 36.7 350 90 0.05 25.2 30.4 37.4 45 0.80 39 38.2 39.8 350 130 0.05 27.3 33.4 41.2 45 0.70 43 42.1 43.9 375 150 0.05 30.1 37.6 46.6 40 0.60 47 46.1 47.9 375 170 0.05 32.9 42.0 51.8 40 0.50 51 50.0 52.0 400 180 0.05 35.7 46.6 57.2 40 0.40 56 54.9 57.1 425 200 0.05 39.2 52.2 63.8 40 0.30 62 60.8 63.2 450 215 0.05 43.4 58.8 71.6 35 0.30 68 66.6 69.4 475 240 0.05 47.6 65.6 79.8 35 0.25 75 73.5 76.5 500 255 0.05 52.5 73.4 88.6 35 0.20 downloaded from: http:///
bzb84_ser_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 ?9 june 2009 7 of 14 nxp semiconductors bzb84 series dual zener diodes [1] f = 1 mhz; v r =0v [2] t p = 100 s; square wave; t j =25 c prior to surge table 10. characteristics per type; bzb84-c2v4 to bzb84-c24 t j =25 c unless otherwise speci?ed. bzb84-cxxx working voltage v z (v) differential resistance r dif ( ) reverse current i r ( a) temperature coef?ient s z (mv/k) diodecapacitance c d (pf) [1] non-repetitive peak reverse current i zsm (a) [2] i z =5ma i z =1ma i z =5ma i z =5ma min max max max max v r (v) min max max max 2v4 2.2 2.6 600 100 50 1 ? 3.5 0 450 6.0 2v7 2.5 2.9 600 100 20 1 ? 3.5 0 450 6.0 3v0 2.8 3.2 600 95 10 1 ? 3.5 0 450 6.0 3v3 3.1 3.5 600 95 5 1 ? 3.5 0 450 6.0 3v6 3.4 3.8 600 90 5 1 ? 3.5 0 450 6.0 3v9 3.7 4.1 600 90 3 1 ? 3.5 0 450 6.0 4v3 4.0 4.6 600 90 3 1 ? 3.5 0 450 6.0 4v7 4.4 5.0 500 80 3 2 ? 3.5 0.2 300 6.0 5v1 4.8 5.4 480 60 2 2 ? 2.7 1.2 300 6.0 5v6 5.2 6.0 400 40 1 2 ? 2.0 2.5 300 6.0 6v2 5.8 6.6 150 10 3 4 0.4 3.7 200 6.0 6v8 6.4 7.2 80 15 2 4 1.2 4.5 200 6.0 7v5 7.0 7.9 80 15 1 5 2.5 5.3 150 4.0 8v2 7.7 8.7 80 15 0.70 5 3.2 6.2 150 4.0 9v1 8.5 9.6 100 15 0.50 6 3.8 7.0 150 3.0 10 9.4 10.6 150 20 0.20 7 4.5 8.0 90 3.0 11 10.4 11.6 150 20 0.10 8 5.4 9.0 85 2.5 12 11.4 12.7 150 25 0.10 8 6.0 10.0 85 2.5 13 12.4 14.1 170 30 0.10 8 7.0 11.0 80 2.5 15 13.8 15.6 200 30 0.05 10.5 9.2 13.0 75 2.0 16 15.3 17.1 200 40 0.05 11.2 10.4 14.0 75 1.5 18 16.8 19.1 225 45 0.05 12.6 12.4 16.0 70 1.5 20 18.8 21.2 225 55 0.05 14.0 14.4 18.0 60 1.5 22 20.8 23.3 250 55 0.05 15.4 16.4 20.0 60 1.25 24 22.8 25.6 250 70 0.05 16.8 18.4 22.0 55 1.25 downloaded from: http:///
bzb84_ser_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 ?9 june 2009 8 of 14 nxp semiconductors bzb84 series dual zener diodes [1] f = 1 mhz; v r =0v [2] t p = 100 s; square wave; t j =25 c prior to surge table 11. characteristics per type; bzb84-c27 to bzb84-c75 t j =25 c unless otherwise speci?ed. bzb84-cxxx working voltage v z (v) differential resistance r dif ( ) reverse current i r ( a) temperature coef?ient s z (mv/k) diodecapacitance c d (pf) [1] non-repetitive peak reverse current i zsm (a) [2] i z =2ma i z = 0.5 ma i z =2ma i z =2ma min max max max max v r (v) min max max max 27 25.1 28.9 300 80 0.05 18.9 21.4 25.3 50 1.00 30 28.0 32.0 300 80 0.05 21.0 24.4 29.4 50 1.00 33 31.0 35.0 325 80 0.05 23.1 27.4 33.4 45 0.90 36 34.0 38.0 350 90 0.05 25.2 30.4 37.4 45 0.80 39 37.0 41.0 350 130 0.05 27.3 33.4 41.2 45 0.70 43 40.0 46.0 375 150 0.05 30.1 37.6 46.6 40 0.60 47 44.0 50.0 375 170 0.05 32.9 42.0 51.8 40 0.50 51 48.0 54.0 400 180 0.05 35.7 46.6 57.2 40 0.40 56 52.0 60.0 425 200 0.05 39.2 52.2 63.8 40 0.30 62 58.0 66.0 450 215 0.05 43.4 58.8 71.6 35 0.30 68 64.0 72.0 475 240 0.05 47.6 65.6 79.8 35 0.25 75 70.0 79.0 500 255 0.05 52.5 73.4 88.6 35 0.20 (1) t j =25 c (prior to surge) (2) t j = 150 c (prior to surge) t j =25 c fig 1. per diode: non-repetitive peak reverse power dissipation as a function of pulse duration; maximum values fig 2. per diode: forward current as a function of forward voltage; typical values mbg801 10 3 1 t p (ms) p zsm (w) 10 10 2 10 ? 1 10 1 (1) (2) v f (v) 0.6 1 0.8 mbg781 100 200 300 i f (ma) 0 downloaded from: http:///
bzb84_ser_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 ?9 june 2009 9 of 14 nxp semiconductors bzb84 series dual zener diodes t j =25 c to 150 c bzb84-b/c2v4 to bzb84-b/c4v3 t j =25 c to 150 c bzb84-b/c4v7 to bzb84-b/c12 fig 3. per diode: temperature coef?ient as a function of working current; typical values fig 4. per diode: temperature coef?ient as a function of working current; typical values t j =25 c bzb84-b/c2v7 to bzb84-b/c8v2 t j =25 c bzb84-b/c10 to bzb84-b/c36 fig 5. per diode: working current as a function of working voltage; typical values fig 6. per diode: working current as a function of working voltage; typical values 06 0 0 ? 2 ? 3 ? 1 mbg783 20 40 i z (ma) s z (mv/k) 4v3 3v9 3v6 3v0 2v4 2v7 3v3 02 0 16 10 0 ? 5 5 mbg782 481 2 i z (ma) s z (mv/k) 4v7 12 11 10 9v1 8v2 7v5 6v8 6v2 5v6 5v1 v z (v) 01 0 8 46 2 006aaa996 20 3010 40 50 i z (ma) 0 v z(nom) (v) = 2.7 3.3 3.9 4.7 5.6 6.8 8.2 v z (v) 04 0 30 10 20 006aaa997 10 20 30 5 15 25 i z (ma) 0 v z(nom) (v) = 10 36 33 27 22 18 12 15 downloaded from: http:///
bzb84_ser_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 ?9 june 2009 10 of 14 nxp semiconductors bzb84 series dual zener diodes 8. test information 8.1 quality information this product has been quali?ed in accordance with the automotive electronics council (aec) standard q101 - stress test quali?cation for discrete semiconductors , and is suitable for use in automotive applications. 9. package outline 10. packing information [1] for further information and the availability of packing methods, see section 14 . [2] the series consists of 74 types with nominal working voltages from 2.4 v to 75 v. fig 7. package outline sot23 (to-236ab) 04-11-04 dimensions in mm 0.450.15 1.9 1.10.9 3.02.8 2.52.1 1.41.2 0.480.38 0.150.09 12 3 table 12. packing methods the indicated -xxx are the last three digits of the 12nc ordering code. [1] type number package description packing quantity 3000 10000 bzb84-b2v4 tobzb84-c75 [2] sot23 4 mm pitch, 8 mm tape and reel -215 -235 downloaded from: http:///
bzb84_ser_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 ?9 june 2009 11 of 14 nxp semiconductors bzb84 series dual zener diodes 11. soldering fig 8. re?w soldering footprint sot23 (to-236ab) fig 9. wave soldering footprint sot23 (to-236ab) solder landssolder resist occupied area solder paste sot023_fr 0.5 (3 ) 0.6 (3 ) 0.6 (3 ) 0.7 (3 ) 3 1 3.32.9 1.7 1.9 2 dimensions in mm solder landssolder resist occupied area preferred transport direction during soldering sot023_fw 2.84.5 1.4 4.6 1.4 (2 ) 1.2 (2 ) 2.2 2.6 dimensions in mm downloaded from: http:///
bzb84_ser_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 ?9 june 2009 12 of 14 nxp semiconductors bzb84 series dual zener diodes 12. revision history table 13. revision history document id release date data sheet status change notice supersedes bzb84_ser_3 20090609 product data sheet - bzb84_ser_2 modi?cations: t ab le 5 limiting v alues : p tot maximum value amended t ab le 6 : r th maximum values amended section 13 legal inf or mation : updated bzb84_ser_2 20090223 product data sheet - bzb84_ser_1 bzb84_ser_1 20080514 product data sheet - - downloaded from: http:///
bzb84_ser_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 ?9 june 2009 13 of 14 nxp semiconductors bzb84 series dual zener diodes 13. legal information 13.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. the latest product status information is available on the internet at url http://www .nxp .com . 13.2 de?itions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 13.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. quick reference data the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 14. contact information for more information, please visit: http://www .nxp.com for sales of?ce addresses, please send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?ition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation. downloaded from: http:///
nxp semiconductors bzb84 series dual zener diodes ?nxp b.v. 2009. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 9 june 2009 document identifier: bzb84_ser_3 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 15. contents 1 product pro?e . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 thermal characteristics. . . . . . . . . . . . . . . . . . . 4 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 test information . . . . . . . . . . . . . . . . . . . . . . . . 10 8.1 quality information . . . . . . . . . . . . . . . . . . . . . 10 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 10 packing information. . . . . . . . . . . . . . . . . . . . . 10 11 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 13 legal information. . . . . . . . . . . . . . . . . . . . . . . 13 13.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 13.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 14 contact information. . . . . . . . . . . . . . . . . . . . . 13 15 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 downloaded from: http:///

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