2SJ575 silicon p channel mos fet high speed switching ade-208-740b (z) 3rd.edition. june 1999 features low on-resistance r ds =2.8 typ. (v gs = -10 v , i d = -50 ma) r ds =5.7 typ. (v gs = -4 v , i d = -50 ma) 4 v gate drive device. small package (mpak) outline 1 2 3 1. source 2. gate 3. drain mpak 2 3 1 d s g
2SJ575 2 absolute maximum ratings (ta = 25?) item symbol ratings unit drain to source voltage v dss -30 v gate to source voltage v gss ?0 v drain current i d -100 ma drain peak current i d(pulse) note1 -400 ma body-drain diode reverse drain current i dr -100 ma channel dissipation pch note 2 400 mw channel temperature tch 150 ? storage temperature tstg ?5 to +150 ? note: 1. pw 10 ?, duty cycle 1% 2. value on the alumina ceramic board (12.5x20x0.7mm) electrical characteristics (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss -30 v i d = -100 ?, v gs = 0 gate to source breakdown voltage v (br)gss ?0 v i g = ?00 ?, v ds = 0 gate to source leak current i gss 5 av gs = ?6 v, v ds = 0 zero gate voltege drain current i dss -1 av ds = -30 v, v gs = 0 gate to source cutoff voltage v gs(off) -1.3 -2.3 v i d = -10?, v ds = -5 v static drain to source on state r ds(on) 2.8 3.3 i d = -50 ma,v gs = -10 v note 3 resistance r ds(on) 5.7 7.9 i d = -50 ma,v gs = -4 v note 3 forward transfer admittance |y fs | 68 105 ms i d = -50 ma, v ds = -10 v note 3 input capacitance ciss 25 pf v ds = -10 v output capacitance coss 20 pf v gs = 0 reverse transfer capacitance crss 8 pf f = 1 mhz turn-on delay time t d(on) 10?si d = -50ma, v gs = -10 v rise time t r 15?sr l = 200 turn-off delay time t d(off) 40?s fall time t f 45?s note: 3. pulse test 4. marking is ap
2SJ575 3 main characteristics -0.1 -1.0 -10 -50 -0.5 -0.4 -0.3 -0.2 -0.1 0 -2 -4 -6 -8 -10 -0.5 -0.4 -0.3 -0.2 -0.1 0 -2 -4 -6 -8 -10 800 600 400 200 0 50 100 150 200 v = -3 v gs tc = ?5 ? 75 ? pulse test v = -10 v pulse test ds -5 -1.0 -0.1 -0.01 -0.001 pw = 10 ms (1 shot) dc operation -5v -4 v -7 v -6 v 25 ? drain to source voltage v (v) ds mavimum safe operation area drain current i (a) d typical output characteristics drain to source voltage v (v) ds gate to source voltage v (v) gs typical transfer characteristics operation in this area is limited by rds(on) channel dissipation *pch (mw) ambient temperature ta ( ?) power vs. temperature derating drain current i (a) d drain current i (a) d 10 ? 100 ? 1 ms -0.05 -0.2 -0.5 -2 -5 -20 -0.0005 -0.002 -0.005 -0.02 -0.05 -0.2 -0.5 -2 ta=25 ? *value on the alumina ceramic boad (12.5x20x0.7mm) value on the alumina ceramic boad (12.5x20x0.7mm)
2SJ575 4 -1.0 -0.8 -0.6 -0.4 -0.2 0 -2 -4 -6 -8 -10 10 8 6 4 2 ?0 0 40 80 120 160 0 i = -100ma d -10m a pulse test pulse test i = -10m a, -50m a d v = -4 v gs -10 v gate to source voltage v (v) gs drain to source saturation voltage vs. gate to source voltage v (v) ds(on) drain to source saturation voltage -0.01 -0.05 -0.02 50 20 10 2 5 1.0 0.5 -0.1 v = -4 v gs -10v pulse test drain current i (a) d static drain to source on state resistance vs. drain current case temperature tc ( ?) static drain to source on state resistance vs. temperature typical transfer characteristics -50m a -100m a -10m a, -50m a, -100m a -0.01 -0.02 -0.1 0.5 0.1 0.01 drain current i (a) d |yfs| (s) forward transfer admittance -0.05 0.005 0.02 0.05 0.2 v = -10 v pulse test ds tc = ?5 ? 75 ? 25 ? static drain to source on state resistance () ds(on) r static drain to source on state resistance () ds(on) r
2SJ575 5 -0.5 -0.4 -0.3 -0.2 -0.1 0 -0.4 -0.8 -1.2 -1.6 -2.0 v = 0,5 v gs -5 v pulse test switching characteristics source to drain voltage v (v) sd reverse drain current i (a) dr reverse drain current vs. source to drain voltage -10 v capacitance c (pf) drain to source voltage v (v) ds typical capacitance vs. drain to source voltage 1000 100 10 1 -0.1 -0.02 -0.01 drain current i (a) d switching time t (ns) -0.05 5 2 20 50 200 500 v = -4 v, v = -10 v pw = 5 ?, duty < 1 % gs dd t f r t d(on) t d(off) t 0 -10 -20 -30 -40 -50 100 10 20 50 1 2 5 ciss coss crss v = 0 f = 1 mhz gs
2SJ575 6 vin monitor d.u.t. vin -10 v r l v = ?0 v dd tr td(on) vin 90% 90% 10% 10% vout td(off) vout monitor 50 90% 10% t f switching time test circuit waveforms
2SJ575 7 package dimensions 0.16 0 ?0.1 + 0.10 ?0.06 0.4 + 0.10 ?0.05 0.95 0.95 1.9 0.2 2.95 0.2 2.8 + 0.2 ?0.6 0.65 1.5 0.15 0.65 1.1 + 0.2 ?0.1 0.3 hitachi code jedec eiaj mass (reference value) mpak conforms 0.011 g as of january, 2001 unit: mm
2SJ575 8 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0
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