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strong ir fet? irfs7534-7ppbf 1 www.irf.com ? 2014 international rectifier submit datasheet feedback november 5, 2014 hexfet ? power mosfet g d s gate drain source application ?? brushed motor drive applications ?? bldc motor drive applications ?? battery powered circuits ?? half-bridge and full-bridge topologies ?? synchronous rectifier applications ?? resonant mode power supplies ?? or-ing and redundant power switches ?? dc/dc and ac/dc converters ?? dc/ac inverters benefits ?? improved gate, avalanche and dynamic dv/dt ruggedness ?? fully characterized capacitance and avalanche soa ?? enhanced body diode dv/dt and di/dt capability ?? lead-free, rohs compliant v dss 60v r ds(on) typ. 1.60m ? ? max 1.95m ? ? i d (silicon limited) 255a ? i d (package limited) 240a d s g ? fig 1. typical on-resistance vs. gate voltage fig 2. maximum drain current vs. case temperature base part number package type standard pack complete part number form quantity irfs7534-7ppbf d 2 pak-7pin tube 50 irfs7534-7ppbf tape and reel left 800 IRFS7534TRL7PP 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0 2 4 6 8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 100a t j = 25c t j = 125c 25 50 75 100 125 150 175 t c , case temperature (c) 0 50 100 150 200 250 300 i d , d r a i n c u r r e n t ( a ) limited by package downloaded from: http:///
? irfs7534-7ppbf 2 www.irf.com ? 2013 international rectifier submit datasheet feedback november 5, 2014 absolute maximum rating symbol parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) 255 ? a i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) 180 i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) 240 i dm pulsed drain current ?? 790 p d @t c = 25c maximum power dissipation 290 w linear derating factor 2.0 w/c v gs gate-to-source voltage 20 v t j t stg operating junction and storage temperature range -55 to + 175 ? c ? soldering temperature, for 10 seconds (1.6mm from case) 300 avalanche characteristics ? symbol parameter max units e as (thermally limited) single pulse avalanche energy ?? 370 mj ? e as (thermally limited) single pulse avalanche energy ?? 773 i ar avalanche current ? see fig 15, 16, 23a, 23b a e ar repetitive avalanche energy ? mj thermal resistance ? symbol parameter typ. max. units r ? jc junction-to-case ?? CCC 0.51 r ? ja junction-to-ambient ? CCC 40 c/w ? static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 60 CCC CCC v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 46 CCC mv/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance CCC 1.60 1.95 v gs = 10v, i d = 100a ? CCC 2.00 CCC v gs = 6.0v, i d = 50a ? v gs(th) gate threshold voltage 2.1 CCC 3.7 v v ds = v gs , i d = 250a i dss drain-to-source leakage current CCC CCC 1.0 a v ds = 60v, v gs = 0v CCC CCC 150 v ds = 60v,v gs = 0v,t j =125c i gss gate-to-source forward leakage CCC CCC 100 na v gs = 20v gate-to-source reverse leakage CCC CCC -100 v gs = -20v r g gate resistance CCC 1.9 CCC ?? m ??? notes: ?? calculated continuous current based on maximum allowable junction temperature. bond wire current limit is 240a. note that current limitations aris ing from heating of the device leads may occur with some lead mounting arrangements. (refer to an-1140) ?? repetitive rating; pulse width limited by max. junction temperature. ? limited by t jmax , starting t j = 25c, l = 74h, r g = 50 ? , i as = 100a, v gs =10v. ?? i sd ? 100a, di/dt ? 1240a/s, v dd ? v (br)dss , t j ?? 175c. ?? pulse width ? 400s; duty cycle ? 2%. ? c oss eff. (tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . ? c oss eff. (er) is a fixed capacitance that gives the same energy as c oss while v ds is rising from 0 to 80% v dss . ? r ? is measured at t j approximately 90c. ? limited by t jmax , starting t j = 25c, l = 1mh, r g = 50 ? , i as = 39a, v gs =10v. ?? when mounted on 1" square pcb (fr-4 or g-10 materi al). for recommended footprint and soldering techniques refer to application note #an-994.please refer to application note to an-994 : http://www.irf.com/technical-info/appnotes/an-994.pdf downloaded from: http:///
? irfs7534-7ppbf 3 www.irf.com ? 2013 international rectifier submit datasheet feedback november 5, 2014 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions gfs forward transconductance 190 CCC CCC s v ds = 10v, i d =100a q g total gate charge CCC 200 300 i d = 100a q gs gate-to-source charge CCC 50 CCC v ds = 30v q gd gate-to-drain charge CCC 59 CCC v gs = 10v q sync total gate charge sync. (qg - qgd) CCC 141 CCC t d(on) turn-on delay time CCC 140 CCC ns v dd = 30v t r rise time CCC 120 CCC i d = 100a t d(off) turn-off delay time CCC 195 CCC r g = 2.7 ?? t f fall time CCC 86 CCC v gs = 10v ? c iss input capacitance CCC 9990 CCC pf ? v gs = 0v c oss output capacitance CCC 915 CCC v ds = 25v c rss reverse transfer capacitance CCC 590 CCC ? = 1.0mhz c oss eff.(er) effective output capacitance (e nergy related) CCC 900 CCC v gs = 0v, v ds = 0v to 48v ? c oss eff.(tr) output capacitance (time related) CCC 1150 CCC v gs = 0v, v ds = 0v to 48v ? diode characteristics ? symbol parameter min. typ. max. units conditions i s continuous source current CCC CCC 255 ? a mosfet symbol (body diode) showing the i sm pulsed source current CCC CCC 790 integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage CCC CCC 1.2 v t j = 25c,i s = 100a,v gs = 0v ?? dv/dt peak diode recovery dv/dt ? CCC 9.4 CCC v/ns t j = 175c,i s =100a,v ds = 60v ? t rr reverse recovery time CCC 45 CCC ns t j = 25c v dd = 51v CCC 48 CCC t j = 125c i f = 100a, q rr reverse recovery charge CCC 64 CCC nc t j = 25c di/dt = 100a/s ??? CCC 78 CCC t j = 125c ? i rrm reverse recovery current CCC 2.4 CCC a t j = 25c ? nc ? d s g downloaded from: http:///
? irfs7534-7ppbf 4 www.irf.com ? 2013 international rectifier submit datasheet feedback november 5, 2014 0 50 100 150 200 250 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 48v v ds = 30v v ds = 12v i d = 100a fig 6. normalized on-resistance vs. temperature 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss fig 5. typical transfer characteristics 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v ? 60s pulse width tj = 175c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v fig 4. typical output characteristics 2.0 3.0 4.0 5.0 6.0 7.0 8.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 25v ? 60s pulse width fig 3. typical output characteristics fig 8. typical gate charge vs. gate-to-source voltage fig 7. typical capacitance vs. drain-to-source voltage 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v ? 60s pulse width tj = 25c 4.5v -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 100a v gs = 10v downloaded from: http:///
? irfs7534-7ppbf 5 www.irf.com ? 2013 international rectifier submit datasheet feedback november 5, 2014 -10 0 10 20 30 40 50 60 v ds, drain-to-source voltage (v) 0.0 0.4 0.8 1.2 1.6 e n e r g y ( j ) 0.1 1 10 v ds , drain-tosource voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec dc limited by package fig 10. maximum safe operating area 0 20 40 60 80 100 120 140 160 180 200 i d , drain current (a) 1.5 2.0 2.5 3.0 3.5 4.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) vgs = 5.5v vgs = 6.0v vgs = 7.0v vgs = 8.0v vgs = 10v fig 11. drain-to-source breakdown voltage fig 12. typical c oss stored energy fig 13. typical on-resista nce vs. drain current 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , temperature ( c ) 64 66 68 70 72 74 76 78 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 1.0ma fig 9. typical source-drain diode forward voltage downloaded from: http:///
? irfs7534-7ppbf 6 www.irf.com ? 2013 international rectifier submit datasheet feedback november 5, 2014 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig 14. maximum effective transient thermal impedance, junction-to-case 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 100a fig 15. avalanche current vs. pulse width fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1.avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 23a, 23b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = tav f z thjc (d, t av ) = transient thermal resistance, see figures 13) pd (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av ?? 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 tav (sec) 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse) downloaded from: http:///
? irfs7534-7ppbf 7 www.irf.com ? 2013 international rectifier submit datasheet feedback november 5, 2014 -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a i d = 1.0ma i d = 1.0a 0 200 400 600 800 1000 di f /dt (a/s) 0 5 10 15 20 i r r m ( a ) i f = 100a v r = 51v t j = 25c t j = 125c fig 17. threshold voltage vs. temperature fig 21. typical stored charge vs. dif/dt 0 200 400 600 800 1000 di f /dt (a/s) 0 5 10 15 20 i r r m ( a ) i f = 60a v r = 51v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 0 100 200 300 400 q r r ( n c ) i f = 60a v r = 51v t j = 25c t j = 125c fig 18. typical recovery current vs. dif/dt 0 200 400 600 800 1000 di f /dt (a/s) 0 100 200 300 400 q r r ( n c ) i f = 100a v r = 51v t j = 25c t j = 125c fig 20. typical stored charge vs. dif/dt fig 19. typical recovery current vs. dif/dt downloaded from: http:///
? irfs7534-7ppbf 8 www.irf.com ? 2013 international rectifier submit datasheet feedback november 5, 2014 fig 22. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 23a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 24a. switching time test circuit fig 25a. gate charge test circuit t p v (br)dss i as fig 23b. unclamped inductive waveforms fig 24b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 25b. gate charge waveform vdd ? downloaded from: http:///
? irfs7534-7ppbf 9 www.irf.com ? 2013 international rectifier submit datasheet feedback november 5, 2014 d 2 pak-7pin package outline (dimensions are shown in millimeters (inches)) note: for the most current drawing please refer to ir website at http://www.irf.com/package/ downloaded from: http:///
? irfs7534-7ppbf 10 www.irf.com ? 2013 international rectifier submit datasheet feedback november 5, 2014 d 2 pak-7pin part marking information d2pak-7pin tape and reel note: for the most current drawing please refer to ir website at http://www.irf.com/package/ downloaded from: http:///
? irfs7534-7ppbf 11 www.irf.com ? 2013 international rectifier submit datasheet feedback november 5, 2014 ? qualification standards can be found at international rectifiers web site: http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standar d at the time of product release. ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ qualification information ? ? qualification level ? industrial (per jedec jesd47f) ?? moisture sensitivity level d 2 pak-7pin msl1 rohs compliant yes revision history date comments 11/5/2014 ?? updated e as (l =1mh) = 773mj on page 2 ?? updated note 9 limited by t jmax , starting t j = 25c, l = 1mh, r g = 50 ? , i as = 39a, v gs =10v on page 2 downloaded from: http:///

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