s o t -2 2 7 is oto p ? file # e145592 "ul recognized" g s s d absolute maximum ratings thermal and mechanical characteristics g d s s in g le die fredfet unit a v mj a unit w c/w c v oz g inlbf nm ratings 38 24 175 30 1200 28 min typ max 355 0.35 0.15 -55 150 2500 1.03 29.2 10 1.1 parameter continuous drain current @ t c = 25c continuous drain current @ t c = 100c pulsed drain current 1 gate-source voltage single pulse avalanche energy 2 avalanche current, repetitive or non-repetitive characteristic total power dissipation @ t c = 25c junction to case thermal resistance case to sink thermal resistance, flat, greased surface operating and storage junction temperature range rms voltage (50-60hhz sinusoidal waveform from terminals to mounting base for 1 min.) package weight terminals and mounting screws. symbol i d i dm v gs e as i ar symbol p d r jc r cs t j ,t stg v isolation w t torque typical applications zvs phase shifted and other full bridge half bridge pfc and other boost converter buck converter single and two switch forward flyback features fast switching with low emi low t rr for high reliability ultra low c rss for improved noise immunity low gate charge avalanche energy rated rohs compliant microsemi website - http://www.microsemi.com APT38F50J APT38F50J 500v, 38a, 0.10 max, t rr 280ns power mos 8 ? is a high speed, high voltage n-channel switch-mode power mosfet. this 'fredfet' version has a drain-source (body) diode that has been optimized for high reliability in zvs phase shifted bridge and other circuits through reduced t rr , soft recovery, and high recovery dv/dt capability. low gate charge, high gain, and a greatly reduced ratio of c rss /c iss result in excellent noise immunity and low switching loss. the intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low emi and reliable paralleling, even when switching at very high frequency. n-channel fredfet 050-8130 rev d 8-2011 downloaded from: http:///
static characteristics t j = 25c unless otherwise speci ? ed dynamic characteristics t j = 25c unless otherwise speci ? ed source-drain diode characteristics 1 repetitive rating: pulse width and case temperature limited by maximum junction temperature. 2 starting at t j = 25c, l = 3.06mh, r g = 25 , i as = 28a. 3 pulse test: pulse width < 380 s, duty cycle < 2%. 4 c o(cr) is de ? ned as a ? xed capacitance with the same stored charge as c oss with v ds = 67% of v (br)dss . 5 c o(er) is de ? ned as a ? xed capacitance with the same stored energy as c oss with v ds = 67% of v (br)dss . to calculate c o(er) for any value of v ds less than v (br)dss, use this equation: c o(er) = -2.04e-7/v ds ^2 + 4.76e-8/v ds + 1.36e-10. 6 r g is external gate resistance, not including internal gate resistance or gate driver impedance. (mic4452) microsemi reserves the right to change, without notice, the speci ? cations and information contained herein. g d s unit v v/c v mv/c a na unit s pf nc ns unit a v ns c a v/ns min typ max 500 0.60 0.085 0.10 2.5 4 5 -10 250 1000 100 min typ max 42 8800 120 945 550 275 220 50 100 38 45 100 33 min typ max 38 175 1.0 280 520 1.20 3.07 10.1 14.5 20 test conditions v gs = 0v , i d = 250 a reference to 25c, i d = 250 a v gs = 10v , i d = 28a v gs = v ds , i d = 2.5ma v ds = 500v t j = 25c v gs = 0v t j = 125c v gs = 30v test conditions v ds = 50v , i d = 28a v gs = 0v , v ds = 25v f = 1mhz v gs = 0v , v ds = 0v to 333v v gs = 0 to 10v , i d = 28a, v ds = 250v resistive switching v dd = 333v , i d = 28a r g = 4.7 6 , v gg = 15v test conditions mosfet symbol showing the integral reverse p-n junction diode (body diode) i sd = 28a , t j = 25c, v gs = 0v t j = 25c t j = 125c i sd = 28a 3 t j = 25c di sd / dt = 100a/ s t j = 125c v dd = 100v t j = 25c t j = 125c i sd 28a, di/dt 1000a/ s, v dd = 333v, t j = 125c parameter drain-source breakdown voltage breakdown voltage temperature coef ? cient drain-source on resistance 3 gate-source threshold voltage threshold voltage temperature coef ? cient zero gate voltage drain current gate-source leakage current parameter forward transconductance input capacitance reverse transfer capacitance output capacitance effective output capacitance, charge related effective output capacitance, energy related total gate charge gate-source charge gate-drain charge turn-on delay time current rise time turn-off delay time current fall time parametercontinuous source current (body diode) pulsed source current (body diode) 1 diode forward voltage reverse recovery time reverse recovery charge reverse recovery current peak recovery dv/dt symbol v br(dss) ? v br(dss) / ? t j r ds(on) v gs(th) ? v gs(th) / ? t j i dss i gss symbol g fs c iss c rss c oss c o(cr) 4 c o(er) 5 q g q gs q gd t d(on) t r t d(off) t f symbol i s i sm v sd t rr q rr i rrm dv/dt 050-8130 rev d 8-2011 APT38F50J downloaded from: http:///
v gs = 7 & 10v 5.5v t j = 125c t j = 25c t j = -55c v gs = 10v 6v 5v v ds > i d(on) x r ds(on) max. 250 sec. pulse test @ <0.5 % duty cycle normalized to v gs = 10v @ 28a t j = 125c t j = 25c t j = -55c c oss c iss i d = 28a v ds = 400v v ds = 100v v ds = 250v t j = 125c t j = 25c t j = -55c t j = 150c t j = 25c t j = 125c t j = 150c c rss 6.5v v gs , gate-to-source voltage (v) g fs , transconductance r ds(on) , drain-to-source on resistance i d , drain current (a) i sd, reverse drain current (a) c, capacitance (pf) i d , drain current (a) i d , drian current (a) v ds(on) , drain-to-source voltage (v) v ds , drain-to-source voltage (v) figure 1, output characteristics figure 2, output characteristics t j , junction temperature (c) v gs , gate-to-source voltage (v) figure 3, r ds(on) vs junction temperature figure 4, transfer characteristics i d , drain current (a) v ds , drain-to-source voltage (v) figure 5, gain vs drain current figure 6, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (v) figure 7, gate charge vs gate-to-source voltage figure 8, reverse drain current vs source-to-drain voltage 0 5 10 15 20 25 0 5 10 15 20 25 30 -55 -25 0 25 50 75 100 125 150 0 2 4 6 8 10 0 10 20 30 40 50 0 100 200 300 400 500 0 50 100 150 200 250 300 350 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 200160 120 8040 0 2.52.0 1.5 1.0 0.5 0 7060 50 40 30 20 10 0 1614 12 10 86 4 2 0 100 9080 70 60 50 40 30 20 10 0 175150 125 100 7550 25 0 20,00010,000 1000 100 10 175150 125 100 7550 25 0 APT38F50J 050-8130 rev d 8-2011 downloaded from: http:///
31.5 (1.240)31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307)8.2 (.322) 30.1 (1.185)30.3 (1.193) 38.0 (1.496)38.2 (1.504) 14.9 (.587)15.1 (.594) 11.8 (.463)12.2 (.480) 8.9 (.350)9.6 (.378) hex nut m 4 (4 places ) 0.75 (.030)0.85 (.033) 12.6 (.496)12.8 (.504) 25.2 (0.992)25.4 (1.000) 1.95 (.077)2.14 (.084) * source drai n gate * r = 4.0 (.157) (2 places) 4.0 (.157)4.2 (.165) (2 places) w=4.1 (.161)w=4.3 (.169) h=4.8 (.187)h=4.9 (.193) (4 places) 3.3 (.129)3.6 (.143) * source emitter terminals are shorte d internally. current handlin g capability is equal for either source terminal . sot-227 (isotop ? ) package outline 1ms 100ms r ds(on) 0.5 single pulse 0.1 0.3 0.7 0.05 d = 0.9 scaling for different case & junction temperatures: i d = i d(t c = 25 c) *( t j - t c )/125 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: t 1 = pulse duration dc line 100 s i dm 10ms 13 s i dm r ds(on) t j = 150c t c = 25c 1ms 100ms dc line 100 s 10ms 13 s i d , drain current (a) v ds , drain-to-source voltage (v) v ds , drain-to-source voltage (v) figure 9, forward safe operating area figure 10, maximum forward safe operating area z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 11. maximum effective transient thermal impedance junction-to-case vs pulse duration i d , drain current (a) 1 10 100 600 1 10 100 600 250100 10 1 0.1 0.400.35 0.30 0.25 0.20 0.15 0.10 0.05 0 250100 10 1 0.1 APT38F50J t j = 125c t c = 75c 050-8130 rev d 8-2011 downloaded from: http:///
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