j. \-f toaucti, one. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 silico n pn p powe r transisto r 2sa118 0 descriptio n ? collector-emitte r breakdow n voltage - :v(br )c eo=-150v(min. ) ? hig h powe r dissipatio n application s ? designe d fo r powe r switchin g amplifie r an d genera l purpos e applications . absolut e maximu m ratings(t a =25'c ) symbo l vcb o vce o veb o i c i b p c t ] t st g paramete r collector-bas e voltag e collector-emitte r voltag e emitter-bas e voltag e collecto r current-continuou s bas e current-continuou s collecto r powe r dissipatio n @t c =25 c junctio n temperatur e storag e temperatur e valu e -15 0 -15 0 - 5 -1 5 - 4 8 0 15 0 -65-15 0 uni t v vv a a w c ? c pi n ibss s ^.emitte r 3.ce!lktor(case ; tc- 3 packag e t-j c -4u- d i , v - i \><$_ ^ bfcl h i t di m a b c d h k l n q u v ini n wi n ma x 390 0 25.3 0 7.8 0 0.9 0 t.4 0 26.6 7 8.5 0 1.1 0 1.6 0 109 2 54 6 11.5 3 167 5 194 0 40 0 3000 43 0 135 0 1?o s 196 2 42 0 302 0 45 0 n j semi-conductor s reserve s th e right t o chang e tes t conditions , paramete r limit s an d packag e dimension s \vithou t notice . informatio n furnishe d h y n j serni-coiiductor s i s believe d t o b e bot h accurat e an d reliabl e a t th e tim e o f goin g 1 0 press . i lo\\cver . n j semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use . n j sem i -conductor s encourage s customer s t o verif y tha t ilatn.sheel s ar e curren t befor e placin g orders . qualit y semi-conductor s downloaded from: http:///
silico n pn p powe r transisto r 2sa118 0 electrica l characteristic s tj=25 c unles s otherwis e specifie d symbo l v(br)ce o v(br)cb o v(br)ebo vce(sat ) vse(sat ) icb o ieb o h f e paramete r collector-emitte r breakdow n voltag e collector-bas e breakdow n voltag e emitter-bas e breakdow n voltag e collector-emitte r saturatio n voltag e base-emitte r saturatio n voltag e collecto r cutof f curren t emitte r cutof f curren t d c curren t gai n condition s lc = -25ma ; i b = 0 lc=-1ma ; i e = 0 l e =-1ma;l c = 0 lc = -5a ; i b = -0.5 a lc = -5a ; i b = -0.5 a v cb =-150v ; i e = 0 v eb = -5v ; l c = 0 l c =-1.5a;vce=-5 v mi n -15 0 -15 0 - 5 3 0 typ . ma x -2. 0 -2. 5 -5 0 -5 0 uni t vv v v v |j a m a downloaded from: http:///
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