DF685 1/8 applications n snubber diode for gto applications features n double side cooling n high surge capability n low recovery charge voltage ratings key parameters v rrm 4500v i f(av) 445a i fsm 4500a q r 650 m c t rr 5 m s current ratings symbol parameter conditions double side cooled i f(av) mean forward current i f(rms) rms value i f continuous (direct) forward current single side cooled (anode side) i f(av) mean forward current i f(rms) rms value i f continuous (direct) forward current units max. half wave resistive load, t case = 65 o c 445 a t case = 65 o c 700 a t case = 65 o c 610 a half wave resistive load, t case = 65 o c 280 a t case = 65 o c 440 a t case = 65 o c 365 a 4500 4400 4300 4200 4100 4000 DF685 45 DF685 44 DF685 43 DF685 42 DF685 41 DF685 40 conditions v rsm = v rrm + 100v lower voltage grades available. type number repetitive peak reverse voltage v rrm v outline type code: m779b. see package details for further information. DF685 fast recovery diode replaces march 1998 version, ds4303-1.3 ds4303-2.0 january 2000
DF685 2/8 surge ratings conditions max. units 4.5 ka 101.25x10 3 a 2 s i 2 t for fusing i 2 t surge (non-repetitive) forward current i fsm parameter symbol 10ms half sine; with 0% v rrm, t j = 150 o c 3.6 ka 64.8x10 3 a 2 s i 2 t for fusing i 2 t surge (non-repetitive) forward current i fsm 10ms half sine; with 50% v rrm, t j = 150 o c -ka -a 2 s i 2 t for fusing i 2 t surge (non-repetitive) forward current i fsm 10ms half sine; with 100% v rrm, t j = 150 o c thermal and mechanical data dc conditions max. units o c/w - 0.086 anode dc clamping force 10kn with mounting compound thermal resistance - case to heatsink r th(c-h) 0.01 double side - single side thermal resistance - junction to case r th(j-c) single side cooled symbol parameter - 0.02 o c/w o c/w cathode dc - 0.095 o c/w double side cooled - 0.045 o c/w t stg storage temperature range -55 150 o c kn 11.0 9.0 clamping force - t vj virtual junction temperature on-state (conducting) - 150 o c min. t rr 80 symbol typ. units parameter v fm forward voltage i rrm peak reverse current reverse recovery time q ra1 recovered charge (50% chord) i rm reverse recovery current k soft factor v to threshold voltage r t slope resistance v frm forward recovery voltage di/dt = 1000a/ m s, t j = 125 o c - 220 v at t vj = 150 o c - 1.76 m w at t vj = 150 o c - 2.0 v 1.8 - - 270 - a - 650 m c 5- m s at v rrm , t case = 150 o c-ma at 1500a peak, t case = 25 o c - 4.8 v conditions max. i f = 1000a, di rr /dt = 100a/ m s t case = 150 o c, v r = 100v characteristics
DF685 3/8 definition of k factor and q ra1 0.5x i rr i rr di r /dt t 1 t 2 t q ra1 = 0.5x i rr (t 1 + t 2 ) k = t 1 /t 2 curves 500 1000 1500 2000 2500 3000 instantaneous forward current i f - (a) 0 2.0 4.0 6.0 8.0 instantaneous forward voltage v f - (v) measured under pulse conditions t j = 150?c t j = 25?c fig. 1 maximum (limit) forward characteristics
DF685 4/8 0 100 200 300 400 500 instantaneous forward current i f - (a) 1.0 1.5 2.0 2.5 3.0 instantaneous forward voltage v f - (v) measured under pulse conditions t j = 150?c t j = 25?c 0 100 200 300 400 500 transient forward votage v fp - (v) 0 500 1000 1500 2000 rate of rise of forward current di f /dt - (a/ s) 2500 t j = 125?c limit t j = 25?c limit current waveform voltage waveform v fr d y d x di = d y dt d x fig. 2 maximum (limit) forward characteristics fig. 3 transient forward voltage vs rate of rise of forward current
DF685 5/8 1 10 100 1000 rate of rise of reverse current di r /dt - (a/ s) 1000 100 10000 100000 reverse recovered charge q s - ( c) i rr q s t p = 1ms i f di r /dt q s = conditions: t j = 150?c, v r = 100v 50 s 0 i f = 4000a i f = 2000a i f = 1000a i f = 500a i f = 200a i f = 100a 1 10 100 1000 rate of rise of reverse current di r /dt - (a/ s) 100 10 1000 10000 reverse recovery current i rr - (a) conditions: t j = 150?c, v r = 100v i f = 4000a i f = 2000a i f = 1000a i f = 500a i f = 200a i f = 100a fig. 4 recovered charge fig. 5 typical reverse recovery current vs rate of rise of reverse current
DF685 6/8 0.100 0.010 0.001 thermal impedance - (?c/w) 0.01 0.1 1 10 100 time - (s) d.c. double side cooled fig. 6 maximum (limit) transient thermal impedance - junction to case - (?c/w)
DF685 7/8 package details for further package information, please contact your local customer service centre. all dimensions in mm, unless stated otherwi se. do not scale. 2 holes 3.6x2.0 deep (in both electrodes) 34 nom 27.0 25.4 cathode anode 34 nom 58.5 max nominal weight: 310g clamping force: 12kn 10% package outine type code: m779b associated publications title application note number calculating the junction temperature or power semiconductors an4506 recommendations for clamping power semiconductors an4839 thyristor and diode measurement with a multi-meter an4853 use of v to , r t on-state characteristic an5001
DF685 8/8 power assembly capability the power assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc- tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage an d current capability of our semiconductors. we offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today . the assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing need s of our customers. using the up to date cad methods our team of design and applications engineers aim to provide the power assembly complete solution (pacs). device clamps disc devices require the correct clamping force to ensure their safe operation. the pacs range offers a varied selection of pr e- loaded clamps to suit all of our manufactured devices. this include cube clamps for single side cooling of t 22mm clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. please refer to our application note on device clamping, an4839 heatsinks power assembly has its own proprietary range of extruded aluminium heatsinks. they have been designed to optimise the performance or our semiconductors. data with respect to air natural, forced air and liquid cooling (with flow rates) is availa ble on request. for further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or the factory. customer service centres france, benelux, italy and spain tel: +33 (0)1 69 18 90 00. fax: +33 (0)1 64 46 54 50 north america tel: 011-800-5554-5554. fax: 011-800-5444-5444 uk, germany, scandinavia & rest of world tel: +44 (0)1522 500500. fax: +44 (0)1522 500020 sales offices france, benelux, italy and spain tel: +33 (0)1 69 18 90 00. fax: +33 (0)1 64 46 54 50 germany tel: 07351 827723 north america tel: (613) 723-7035. fax: (613) 723-1518. toll free: 1.888.33.dynex (39639) / tel: (831) 440-1988. fax: (831) 440-1989 / tel: (949) 733-3005. fax: (949) 733-2986. uk, germany, scandinavia & rest of world tel: +44 (0)1522 500500. fax: +44 (0)1522 500020 these offices are supported by representatives and distributors in many countries world-wide. ? dynex semiconductor 2000 publication no. ds4303-2 issue no. 2.0 january 2000 technical documentation C not for resale. printed in united kingdom headquarters operations dynex semiconductor ltd doddington road, lincoln. lincolnshire. ln6 3lf. united kingdom. tel: 00-44-(0)1522-500500 fax: 00-44-(0)1522-500550 dynex power inc. unit 7 - 58 antares drive, nepean, ontario, canada k2e 7w6. tel: 613.723.7035 fax: 613.723.1518 toll free: 1.888.33.dynex (39639) this publication is issued to provide information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. no warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. the company reserves the right to alter without prior notice the specification, design or price of any product or service. information concerning p ossible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. it is the user's responsibility to fully determine the p erformance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. these products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. all products and materials are sold and services provided subject to the company's conditions of sale, w hich are available on request. all brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respec tive owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com datasheet annotations: dynex semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. the annota tions are as follows:- target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product is in design and development. the datasheet represents the product as it is understood but details may change. advance information: the product design is complete and final characterisation for volume production is well in hand. no annotation: the product parameters are fixed and the product is available to datasheet specification.
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