V60D100C-M3, v60d100chm3 www.vishay.com vishay general semiconductor revision: 28-mar-15 1 document number: 87952 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dual high-voltage trench mos barrier schottky rectifier ultra low v f = 0.36 v at i f = 5 a features ? trench mos schottky technology ? very low profile - typical height of 1.7 mm ? ideal for automated placement ? low forward voltage drop, low power losses ? high efficiency operation ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? aec-q101 qualified available: ? - automotive ordering code: base p/nhm3 ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in high frequency dc/dc converters, switching power supplies, freewheeling diodes, or-ing diode, and reverse battery protection in commercial, inductrial, and automotive application. mechanical data case: to-263ac (smpd) ? molding compound meets ul 94 v-0 flammability rating base p/n-m3 - halogen-free, rohs-compliant ? base p/nhm3 - halogen-free, rohs-compliant, and aec-q101 qualified terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? m3 and hm3 suffix meets jesd 201 class 2 whisker test polarity: as marked primary characteristics i f(av) 2 x 30 a v rrm 100 v i fsm 320 a v f at i f = 30 a (t a = 125 c) 0.66 v t j max. 150 c package to-263ac (smpd) diode variations dual common cathode v60d100c top view bottom view pin 1 k heatsink pin 2 k 1 2 tmbs ? esmp ? series to-263ac (smpd) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol v60d100c unit maximum repetitive pe ak reverse voltage v rrm 100 v maximum average forward rectified current ? (fig. 1) per device i f(av) 60 a per diode 30 peak forward surge current 10 ms single ha lf sine-wave superimposed on rated load i fsm 320 a voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction and storage temperature range t j , t stg -40 to +150 c
V60D100C-M3, v60d100chm3 www.vishay.com vishay general semiconductor revision: 28-mar-15 2 document number: 87952 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 5 ms notes (1) the heat generated must be less than the thermal conductivity from junction-to-ambient: dp d /dt j < 1/r ? ja (2) free air, without heatsi nk; thermal resistance r ? ja - junction to ambient; thermal resistance r ? jm - junction to mount note (1) aec-q101 qualified electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit instantaneous forward voltage per diode i f = 5 a t a = 25 c v f (1) 0.45 - v i f = 15 a 0.62 - i f = 30 a 0.75 0.81 i f = 5 a t a = 125 c 0.36 - i f = 15 a 0.54 - i f = 30 a 0.66 0.73 reverse current at rated v r per diode v r = 70 v t a = 25 c i r (2) 12 - a t a = 125 c 11 - ma v r = 100 v t a = 25 c - 1000 a t a = 125 c 27 85 ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol v60d100c unit typical thermal resistance per diode r ? jc 1.8 c/w per device r ? jc 0.95 per device r ? jm (2) 3 per device r ? ja (1)(2) 45 ordering information (example) package preferred p/n unit weight (g) package code base quantity delivery mode to-263ac (smpd) V60D100C-M3/i 0.55 i 2000/reel 13" diameter plastic tape and reel to-263ac (smpd) v60d100chm3/i (1) 0.55 i 2000/reel 13" diameter plastic tape and reel
V60D100C-M3, v60d100chm3 www.vishay.com vishay general semiconductor revision: 28-mar-15 3 document number: 87952 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - forward current derating curve fig. 2 - forward power loss characteristics per diode fig. 3 - typical instantaneous forward characteristics per diode fig. 4 - typical reverse characteristics per diode fig. 5 - typical junction capacitance per diode fig. 6 - typical transient thermal impedance per device 0 5 10 15 20 25 30 35 40 45 50 55 60 65 0 25 50 75 100 125 150 average forward rectified current (a) ca s e temperature (c) r thjc = 0.95 c/w r thja = 45 c/w 0 2 4 6 8 10 12 14 16 18 20 22 24 26 0 5 10 15 20 25 30 35 average power lo ss (w) average forward current (a) d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 1.0 d = 0.8 t d = t p /t t p 0.1 1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 in s tantaneou s forward current (a) in s tantaneou s forward voltage (v) t a = 150 c t a = 25 c t a = 100 c t a = 125 c 0.001 0.01 0.1 1 10 100 1000 10 20 30 40 50 60 70 80 90 100 in s tantaneou s rever s e current (ma) percent of rated peak rever s e voltage (%) t a = 150 c t a = 125 c t a = 100 c t a = 25 c 100 1000 10 000 0.1 1 10 100 junction capacitance (pf) rever s e voltage (v) t j = 25 c f = 1.0 mhz v s ig = 50 mv p -p 0.1 1 10 100 0.01 0.1 1 10 100 tran s ient thermal impedance (c/w) t - pul s e duration ( s ) junction to ambient
V60D100C-M3, v60d100chm3 www.vishay.com vishay general semiconductor revision: 28-mar-15 4 document number: 87952 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - thermal resistance junction-to-ambient vs. copper pad areas package outline dimensions in inches (millimeters) 35 40 45 50 re s i s tance ( c/w) 20 25 30 35 40 123456789 thermal re s i s t a 20 123456789 copper pad area s (cm 2 ) ( ) s(cm 2 ) m epoxy printed circiut board fr4 copper thickness = 70 5 ( ) mounting pad layout 0 , 1 0 , 1 5 ( ) to-263ac (smpd) 1 2 0 1 2 0 w r w r 5 ( )
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