dm g3407ssn document number: ds35135 rev. 7 - 2 1 of 7 www.diodes.com february 2017 ? diodes incorporated dm g3407ssn advance information p - channel enhancement mode mosfet product summary b v dss r ds(on) max i d max t a = + 25c - 3 0v 5 0m? @ v gs = - 10v - 4.0a 72 m? @ v gs = - 4.5v - 3.3a description and applications t his mosfet has been designed to minimize the on - state resistance (r ds( on ) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. ? ? ? features and benefits ? ? ? ? ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability mechanical data ? ? case material: molded plastic, green molding compound. ? ? ? ? ? ordering information (note 4 ) part number case packaging dm g3407ssn - 7 sc 59 30 00 / tape & reel notes: 1. no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain < 900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging det ails, go to our website at http: //www.diodes.com/products/packages.html . marking information date code key year 2010 ~ 2017 2018 201 9 20 20 20 2 1 code x ~ e f g h i month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d sc 59 t op view pin configuration internal schematic g32 = product type marking code ym = date code marking y = year (ex: e = 201 7 ) m = month (ex: 9 = september) d s g g32 y m e3
dm g3407ssn document number: ds35135 rev. 7 - 2 2 of 7 www.diodes.com february 2017 ? diodes incorporated dm g3407ssn advance information maximum ratings ( @t a = + 25c , unless otherwise specified .) characteristic symbol value unit drain - source voltage v dss - 3 0 v gate - source voltage v gss 2 0 v continuous drain current (note 6 ) v gs = - 10 v steady state t a = + 25c t a = + 70c i d - 4.0 - 3.2 a t<10s t a = + 25c t a = + 70c i d - 4.6 - 3.6 a continuous drain current (note 6 ) v gs = - 4.5 v steady state t a = + 25c t a = + 70c i d - 3.3 - 2.6 a t<10s t a = + 25c t a = + 70c i d - 3.9 - 3.1 a pulsed drain curren t ( 10 ? s p ulse, d uty c ycle = 1% ) i dm - 30 a maximum body diode forward current (note 6 ) i s - 2.0 a thermal characteristics ( @t a = + 25c , unless otherwise specified .) characteristic symbol value unit total power dissipation (note 5 ) t a = + 25c p d 1.1 w t a = + 70 c 0.7 thermal resistance, junction to ambient (note 5 ) s teady state r ? ja 166 c/w t<10s 118 total power dissipation (note 6 ) t a = + 25c p d 1.8 w t a = + 70 c 1.1 thermal resistance, junction to ambient (note 6 ) s teady state r ? ja 98 c/w t<10s 7 1 thermal resistance, junction to case (note 6 ) r ? j c 18 operating and storage temperature range t j, t stg - 55 to +150 c electrical c haracteristics ( @ t a = + 25c , unless otherwise stated .) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss - 30 - - v v gs = 0v, i d = - 250a zero gate voltage drain current , t j = + 25c i dss - - - 1 ? a v ds = - 30 v, v gs = 0v gate - source leakage i gss - - 100 n a v gs = 20 v, v ds = 0v on characteristics (note 7 ) gate threshold voltage v gs( th) - 1. 0 - 1.5 - 2. 1 v v ds = v gs , i d = - 250 a static drain - source on - resistance r ds (on) - 39 50 m ? v gs = - 10 v, i d = - 4.1 a - 56 72 v gs = - 4.5 v, i d = - 3.0 a forward transfer admittance |y fs | - 8.2 - s v ds = - 5 v, i d = - 4 a diode forward voltage v sd - - 0.75 - 1. 1 v v gs = 0v, i s = - 1 a dynamic characteristics (note 8 ) input capacitance c iss 466 582 700 pf v ds = - 15 v, v gs = 0v , f = 1.0mhz output capacitance c oss 80 114 148 reverse transfer capacitance c rss 47 76 105 gate resistance r g 2 5 8 ? v ds = 0 v, v gs = 0v , f = 1mhz total gate charge q g 10.6 13.3 16 nc v gs = - 10 v, v ds = - 15 v, i d = - 4 a total gate charge q g 5.2 6.5 8.5 v gs = - 4.5 v, v ds = - 15 v,i d = - 4 a gate - source charge q gs 1.3 1.7 2 gate - drain charge q gd 1.1 1.9 2.7 turn - on delay time t d( on ) - 6.0 - ns v gs = - 10 v, v ds = - 15 v, r l = 3.6 , r g = 3 turn - on rise time t r - 12.9 - turn - off delay time t d( off ) - 35.4 - turn - off fall time t f - 30.7 - reverse recovery time t rr 6.8 8.5 10.2 ns i f = 4 a, di/dt = 1 00a/ s reverse recovery charge q rr 5.5 7.0 8.5 n c notes: 5 . device mounted on fr - 4 pcb with minimum recommended pad layout, single sided. the power dissipation p d is based on t<10s r ? ja . 6 . device mounted on 1 x 1 fr - 4 pcb with high coverage 2 oz. c opper , single sided. the power dissipation p d is based on t<10s r ? ja . 7 . short duration pulse test used to minimize self - heating effect. 8 . guaranteed by design. not subject to production testing.
dm g3407ssn document number: ds35135 rev. 7 - 2 3 of 7 www.diodes.com february 2017 ? diodes incorporated dm g3407ssn advance information ( a ) 0 4 8 12 16 20 -v , drain -source voltage(v) fig. 1 typical output characteristics ds 0 1 2 3 4 5 - i , d r a i n c u r r e n t ( a ) d v = -2.0v gs v = -2.5v gs v = -3.5v gs v = -3.0v gs v = -4.0v gs v = -4.5v gs 0 2 4 6 8 10 -v , gate-source voltage (v) gs fig. 2 typical transfer characteristics - i , d r a i n c u r r e n t ( a ) d t = 150 c a ? t = 125 c a ? t = 85 c a ? t = 25 c a ? t = -55 c a ? v = -5.0v ds 0 0.02 0.04 0.06 0.08 0.12 0.10 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 2 4 6 8 10 -i , drain source current fig. 3 typical on-resistance vs. drain current and gate voltage d 0 2 4 6 8 10 -i , drain source current (a) fig. 4 typical on-resistance vs. drain current and temperature d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = -4.5v gs t = -55 c a ? t = 25 c a ? t = 85 c a ? t = 125 c a ? t = 150 c a ? 0.5 0.7 0.9 1.1 1.3 1.5 1.7 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? fig. 5 on-resistance variation with temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) 0 0.02 0.04 0.06 0.08 0.10 0.12 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? fig. 6 on-resistance variation with temperature v = -10v i = a gs d -10 v = .5v i = a gs d -4 -5
dm g3407ssn document number: ds35135 rev. 7 - 2 4 of 7 www.diodes.com february 2017 ? diodes incorporated dm g3407ssn advance information 2 6 10 14 18 22 26 30 - v , drain - source voltage (v) fig. 10 typical drain - source leakage current vs. voltage ds - i , l e a k a g e c u r r e n t ( n a ) d s s 0.1 1 10 100 1,000 10,000 t =150c a t a =125c t =85c a t a = 25c - i dss , leakage current ( n a) ( o c) 0.01 0.1 1 10 100 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) fig.12 soa, safe operation area r ds(on) limited t j(max) =150 t c =25 v gs = - 10v single pulse dut on 1*mrp board p w =10s dc p w =1s p w =100ms p w =10ms p w =1ms p w =100 s 0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 t , ambient temperature ( C ) fig. 7 gate threshold variation vs. ambient temperature a - v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 0.2 0.4 0.6 0.8 1.0 1.2 -v , source-drain voltage (v) fig. 8 diode forward voltage vs. current sd 0 2 4 6 8 10 - i , s o u r c e c u r r e n t ( a ) s 10 100 1,000 -v , drain-source voltage (v) fig. 9 typical junction capacitance ds 0 5 10 15 20 25 30 c , j u n c t i o n c a p a c i t a n c e ( p f ) t c oss c rss f = 1mhz c iss 0 4 8 12 16 q , total gate charge (nc) fig. 11 gate-charge characteristics g 0 2 4 6 8 10 - v , g a t e - s o u r c e v o l t a g e ( v ) g s
dm g3407ssn document number: ds35135 rev. 7 - 2 5 of 7 www.diodes.com february 2017 ? diodes incorporated dm g3407ssn advance information 0 50 100 150 200 250 300 350 400 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 p (pk) , peak transient power (w) t1, pulse duration time (sec) fig. 13 single pulse maximum power dissipation single pulse r ja = 162 /w r ja (t)=r ja * r(t) t j - t a =p * r ja (t) 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), transient thermal resistance t1, pulse duration time (sec) fig. 14 transient thermal resistance d=0.9 d=0.7 d=0.5 d=0.3 d=0.1 d=0.05 d=0.02 d=0.01 d=0.005 d=single pulse r ja (t) = r(t)* r ja r ja = 1 62 o c /w duty cycle, d = t1/t2
dm g3407ssn document number: ds35135 rev. 7 - 2 6 of 7 www.diodes.com february 2017 ? diodes incorporated dm g3407ssn advance information pa ckage outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. sc59 suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. sc59 sc59 dim min max typ a 0.35 0.50 0.38 b 1.50 1.70 1.60 c 2.70 3.00 2.80 d - - 0.95 g - - 1.90 h 2.90 3.10 3.00 j 0.013 0.10 0.05 k 1.00 1.30 1.10 l 0.35 0.55 0.40 m 0.10 0.20 0.15 n 0.70 0.80 0.75 ? ? all dimensions in mm dimensions value (in mm) z 3.4 x 0.8 y 1.0 c 2.4 e 1.35 a m j l d b c h k g n x e y c z
dm g3407ssn document number: ds35135 rev. 7 - 2 7 of 7 www.diodes.com february 2017 ? diodes incorporated dm g3407ssn advance information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemni fy and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicat ion. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are sp ecifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or sys tems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiven ess. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related re quirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 2017 , diodes incorporated www.diodes.com
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