qs6j3 transistors 1/3 small switching ( ? 20v, ? 1.5a) qs6j3 z features 1) two pch mosfet transistors in a single tsmt6 package. 2) pch treueh mosfet have a low on-state resistance with a fast switching. 3) nch treueh mosfet is reacted a low voltage drive (2.5v). z applications switch z structure silicon p-channel mosfet z packaging specifications package code taping basic ordering unit (pieces) qs6j3 tr 3000 type z external dimensions (unit : mm) each lead has same dimensions tsmt6 abbreviated symbol : j03 0.16 0.85 2.9 2.8 1.6 0.4 (1) (5) (3) (6) (2) (4) 1pin mark z equivalent circuit (1) tr1 source (2) tr1 gate (3) tr2 drain (4) tr2 source (5) tr2 gate (6) tr1 drain ? 1 esd protection diode ? 2 body diode ? 2 ? 2 ? 1 ? 1 (1) (6) (3) (4) (2) (5) z absolute maximum ratings (ta=25 c) ? 1 ? 2 ? 1 parameter v v dss symbol v v gss a i d a i dp a i s a i sp w / total p d c tch c tstg limits unit drain-source voltage gate-source voltage drain current total power dissipation channel temperature range of storage temperature continuous pulsed continuous pulsed ? 1 pw 10 s, duty cycle 1% ? 2 mounted on a ceramic board source current (body diode) ? 20 150 ? 55 to + 150 12 1.5 6.0 ? 0.75 ? 6.0 1.25 z thermal resistance c / w / total rth (ch-a) 100 channel to ambient parameter symbol limits unit ? mounted on a ceramic board ?
qs6j3 transistors 2/3 z electrical characteristics (ta=25 c) ? pulsed gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge parameter symbol i gss y fs min. ?? 10 av gs = 12v, v ds = 0v v dd ? 15v typ. max. unit conditions v (br) dss ? 20 ?? vi d = ? 1ma, v gs = 0v i dss ??? 1 av ds = ? 20v, v gs = 0v v gs (th) ? 0.7 ?? 2.0 v v ds = ? 10v, i d = ? 1ma ? 155 215 i d = ? 1.5a, v gs = ? 4.5v r ds (on) ? 170 235 m ? m ? m ? i d = ? 1.5a, v gs = ? 4v ? 310 430 i d = ? 0.75a, v gs = ? 2.5v 1.0 ?? sv ds = ? 10v, i d = ? 0.75a c iss ? 270 ? pf v ds = ? 10v c oss ? 40 35 ? pf v gs = 0v c rss ? 10 ? pf f = 1mhz t d (on) ? 12 ? ns t r ? 45 ? ns t d (off) ? 20 ? ns t f ? 3.0 ? ns q g ? 0.8 ? nc q gs ? 0.85 ? nc v gs = ? 4.5v q gd ?? nc ? ? ? ? ? ? v dd ? 15 v i d = ? 0.75a v gs = ? 4.5v r l = 20 ? r g = 10 ? r l = 10 ? r g = 10 ? i d = ? 1.5a z body diode (source-drain) v sd ??? 1.2 v i s = ? 0.75a, v gs = 0v forward voltage parameter symbol min. typ. max. unit conditions z electrical characteristic curves 0.01 0.1 1 10 100 drain-source voltage : ? v ds (v) capacitance : c (pf) 100 1000 10 ta = 25 c f = 1mhz v gs = 0v fig.1 typical capacitance vs. drain-source voltage c iss c oss c rss 1 10 100 1000 0.01 0.1 1 10 drain current : ? i d (a) switching time : t (ns) fig.2 switching characteristics t d (off) t d (on) t r t f ta = 25 c v dd = ? 15v v gs = ? 4.5a r g = 10 ? pulsed ta = 25 c v dd = ? 15v i d = ? 1.5a r g = 10 ? pulsed 0 0.5 1 1.5 2 2.5 3 3.5 total gate charge : qg (nc) 0 1 2 3 4 5 6 7 8 gate-source voltage : ? v gs (v) fig.3 dynamic input characteristics 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 gate-source voltage : ? v gs (v) 0.001 0.01 0.1 1 10 drain current : ? i d (a) fig.4 typical transfer characteristics v ds = ? 10v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c 024681012 gate-source voltage : ? v gs (v) 0 100 200 300 400 500 static drain-source on-state resistance : r ds (on) (m ? ) fig.5 static drain-source on-state resistance vs. gate-source voltage ta = 25 c pulsed i d = ? 1.5a i d = ? 0.75a 0.0 0.5 1.0 1.5 2.0 source-drain voltage : ? v sd (v) 0.01 0.1 1 10 source current : ? i s (a) fig.6 source current vs. source-drain voltage ta = 25 c v gs = 0v pulsed
qs6j3 transistors 3/3 10 100 1000 10000 0.1 1 10 fig.7 static drain-source on-state resistance vs. drain current ( ) drain current : ? i d (a) static drain-source on-state resistance : r ds (on) (m ? ) v gs = ? 4.5v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c 10 100 1000 10000 0.1 1 10 drain current : ? i d (a) static drain-source on-state resistance : r ds (on) (m ? ) fig.8 static drain-source on-state resistance vs. drain current ( ? ) v gs = ? 4v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c 10 100 1000 10000 0.1 1 10 drain current : ? i d (a) static drain-source on-state resistance : r ds (on) (m ? ) fig.9 static drain-source on-state resistance vs. drain current ( ?? ) v gs = ? 2.5v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c z measurement circuits fig.10 switching time measurement circuit v gs r g v ds d.u.t. i d r l v dd fig.11 switching waveforms 90% 90% 90% 10% 10% 10% 50% 50% pulse width v gs v ds t on t off t r t d(on) t r t d(off) fig.12 gate charge measurement circuit v gs i g(const) r g v ds d.u.t. i d r l v dd fig.13 gate charge waveform v g v gs charge q g q gs q gd
appendix appendix1-rev1.0 the products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document use silicon as a basic material. products listed in this document are no antiradiation design. about export control order in japan products described herein are the objects of controlled goods in annex 1 (item 16) of export trade control order in japan. in case of export from japan, please confirm if it applies to "objective" criteria or an "informed" (by miti clause) on the basis of "catch all controls for non-proliferation of weapons of mass destruction.
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