MRF9582NT1 1 rf device data freescale semiconductor silicon lateral fet, n - channel enhancement - mode mosfet designed for use in medium voltage, moderate power amplifiers such as portable analog and digital cellular radios and pc rf modems. ? typical cw rf performance @ 849 mhz: v dd = 12.5 volts, i dq = 300 ma, p out = 38 dbm power gain ? 10.5 db drain efficiency ? 55% ? capable of handling 10:1 vswr, @ 12.5 vdc, 849 mhz, 38 dbm ? rohs compliant ? in tape and reel. t1 suffix = 1,000 units per 12 mm, 7 inch reel table 1. maximum ratings rating symbol value unit drain - source voltage v dss 17 vdc drain - gate voltage (r gs = 1.0 m ) v dgo 17 vdc gate - source voltage v gs 4.0 vdc drain current - continuous i d 1.5 adc total device dissipation @ t c = 85 c p d 10.5 w storage temperature range t stg - 65 to 150 c operating junction temperature t j 150 c table 2. thermal characteristics characteristic symbol value unit thermal resistance, junction - to - case r jc 6 c/w table 3. moisture sensitivity level test methodology rating package peak temperature unit per jesd 22 - a113, ipc/jedec j - std - 020 1 260 c note - caution - mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. document number: MRF9582NT1 rev. 1, 7/2006 freescale semiconductor technical data MRF9582NT1 849 mhz, 38 dbm, 12.5 v high frequency power transistor ldmos fet case 449 - 02, style 1 pld - 1 4 1 2 3 ? freescale semiconductor, inc., 2006. all rights reserved.
2 rf device data freescale semiconductor MRF9582NT1 table 4. electrical characteristics (t c = 25 c, unless otherwise noted) characteristic symbol min typ max unit off characteristics drain - source breakdown voltage (v gs = 0, i d = 100 nadc) v (br)dss ? 45 ? vdc drain - source leakage current (v ds = 12.5 vdc, v gs = 0) i dss ? ? 100 nadc gate - source leakage current (v gs = 5 vdc, v ds = 0) i gss ? ? 100 nadc on characteristics gate threshold voltage v gs ? 2.4 ? vdc resistance drain - source (v gs = 5 vdc, i d = 300 ma) r ds(on) 0.05 0.5 0.8 dynamic characteristics input capacitance (v ds = 12.5 vdc, v gs = 0, f = 1.0 mhz) c iss ? 30.77 ? pf output capacitance (v ds = 12.5 vdc, v gs = 0, f = 1.0 mhz) c oss ? 15.6 ? pf feedback capacitance (v ds = 12.5 vdc, v gs = 0, f = 1.0 mhz) c rss ? 0.82 ? pf typical characteristics power gain (v dd = 12.5 vdc, p in = 27.5 dbm, f = 849 mhz) g ps ? 10.5 ? db drain efficiency (v dd = 12.5 vdc, p in = 27.5 dbm, f = 849 mhz) d ? 55 ? % output power p out ? 38 ? dbm
MRF9582NT1 3 rf device data freescale semiconductor typical characteristics i dq , quiescent current (ma) output power (dbm) efficiency (%) output power (dbm) 400 820 70 820 39 820 40 820 f, frequency (mhz) f, frequency (mhz) f, frequency (mhz) figure 1. output power versus frequency f, frequency (mhz) figure 2. efficiency versus frequency p in = 27.5 dbm t a = 25 c v g = 2.4 v figure 3. output power versus frequency figure 4. quiescent current versus frequency 825 830 835 840 845 850 855 39.5 39 38.5 38 37.5 37 11.25 v 12.50 v 13.75 v p in = 27.5 dbm t a = 25 c v g = 2.4 v 825 830 835 840 845 850 855 68 66 64 62 60 11.25 v 12.50 v 13.75 v 825 830 835 840 845 850 855 38.8 38.6 38.4 38.2 38 p in = 27.5 dbm v dd = 12.5 v v g = 2.4 v 85 c 25 c ?35 c 85 c 25 c ?35 c 825 830 835 840 845 850 855 p in = 27.5 dbm v dd = 12.5 v v g = 2.4 v 350 300 250 200 150 100
4 rf device data freescale semiconductor MRF9582NT1 figure 5. series equivalent source and load impedance f mhz z source z load 849 2.5 - j2.5 2.5 + j0.5 v dd = 12.5 vdc, i dq = 300 ma, p out = 38 dbm z o = 5 z load f = 849 mhz z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network z source f = 849 mhz
MRF9582NT1 5 rf device data freescale semiconductor notes
6 rf device data freescale semiconductor MRF9582NT1 notes
MRF9582NT1 7 rf device data freescale semiconductor package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. draft a style 1: pin 1. drain 2. gate 3. source 4. source l s k b r q 4 1 3 2 n m 4 pl f 2 pl zone v p c e w 8 pl zone u resin bleed/flash allowable d 2 pl j 8 pl dim min max min max millimeters inches a 0.185 0.195 4.70 4.95 b 0.175 0.185 4.44 4.70 c 0.058 0.064 1.47 1.63 d 0.017 0.023 0.43 0.58 e 0.014 0.017 0.36 0.43 f 0.027 0.033 0.69 0.84 g 0.071 0.077 1.80 1.96 h 0.017 0.023 0.43 0.58 j 0.000 0.007 0.00 0.18 k 0.018 0.026 0.46 0.66 l 0.253 0.263 6.43 6.68 m 5 ref 5 ref n 1.75 ref 4.44 ref p 0.000 0.006 0.00 0.15 q 0.120 0.130 3.05 3.30 r 0.220 0.230 5.59 5.84 s 0.030 0.038 0.76 0.97 t 0.050 0.060 1.27 1.52 u 0.000 0.018 0.00 0.46 v 0.000 0.014 0.00 0.36 w 0.004 0.016 0.10 0.41 x 0.131 0.141 3.33 3.58 y 0.065 0.075 1.65 1.90 z 0.089 0.099 2.26 2.51 aa 0.056 0.066 1.42 1.67
8 rf device data freescale semiconductor MRF9582NT1 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2006. all rights reserved. how to reach us: home page: www.freescale.com e - mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 fax: 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: MRF9582NT1 rev. 1, 7/2006
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