www.irf.com 1 product summary part number bv dss r ds(on) i d irf7na2907 75v 0.0045 ? 75a*
hexfet ? power mosfet irf7na2907 surface mount (smd-2) 75v, n-channel seventh generation hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. these devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. features: low r ds(on) avalanche energy ratings dynamic dv/dt rating simple drive requirements ease of paralleling hermetically sealed surface mount smd-2
light weight absolute maximum ratings parameter units i d @ v gs = 10v, t c = 25c continuous drain current 75* i d @ v gs = 10v, t c = 100c continuous drain current 75* i dm pulsed drain current 300 p d @ t c = 25c max. power dissipation 250 w linear derating factor 2.0 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 500 mj i ar avalanche current 75 a e ar repetitive avalanche energy 25 mj dv/dt peak diode recovery dv/dt 6.4 v/ns t j operating junction -55 to 150 t stg storage temperature range package mounting surface temp. 300 (for 5s) weight 3.3 (t ypical) g o c a pd-94337c
irf7na2907 2 www.irf.com thermal resistance parameter min typ max units test conditions r thjc junction-to-case ? ? 0.5 c/w note: corresponding spice and saber models are available on the international rectifier website.
source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) ? ? 75* i sm pulse source current (body diode) ? ? 300 v sd diode forward voltage ? ? 1.65 v t j = 25c, i s = 75a, v gs = 0v t rr reverse recovery time ? ? 175 ns t j = 25c, i f = 45a, di/dt 100a/ s q rr reverse recovery charge ? ? 850 nc v dd 25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a
electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 75 ? ? v v gs = 0v, i d = 250 a ? bv dss / ? t j temperature coefficient of breakdown ? 0.08 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.0045 ? v gs = 10v, i d = 75a resistance v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 250 a g fs forward transconductance 130 ? ? s v ds = 15v, i ds = 75a i dss zero gate voltage drain current ? ? 20 v ds = 75v ,v gs =0v ? ? 250 v ds = 60v, v gs = 0v, t j =125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 375 v gs = 10v, i d = 45a q gs gate-to-source charge ? ? 60 nc v ds = 60v q gd gate-to-drain (?miller?) charge ? ? 150 t d (on) turn-on delay time ? ? 40 v dd = 38v, i d = 45a, t r rise time ? ? 125 v gs = 10v, r g = 1.2 ? t d (off) turn-off delay time ? ? 175 t f fall time ? ? 75 l s + l d total inductance ? 4.0 ? measured from the center of drain l pad to the center of source pad c iss input capacitance ? 12000 ? v gs = 0v, v ds = 25v c oss output capacitance ? 2280 ? pf f = 1.0mhz c rss reverse transfer capacitance ? 610 ? na nh ns a
www.irf.com 3 irf7na2907 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 10 100 1000 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 75a 10 100 1000 4.5 5.0 5.5 6.0 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j
irf7na2907 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 4000 8000 12000 16000 20000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0.1 1 10 100 1000 0.0 0.5 1.0 1.5 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0 1 10 100 1000 v ds , drain-tosource voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 100s 0 100 200 300 400 500 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 45a v = 60v ds
www.irf.com 5 irf7na2907 fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature
1 0.1 % + - v gs v ds 90% 10% v gs t d(on) t r t d(off) t f 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 50 100 150 200 t , case temperature ( c) i , drain current (a) c d limited by package
irf7na2907 6 www.irf.com fig 12c. maximum avalanche energy vs. drain current q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs 25 50 75 100 125 150 0 200 400 600 800 1000 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 33.5a 47.4a 75a
www.irf.com 7 irf7na2907 repetitive rating; pulse width limited by maximum junction temperature. pulse width 300 s; duty cycle 2% v dd = 25 v, starting t j = 25c, l= 0.17 peak i as = 75a, v gs = 10v, r g = ? footnotes: case outline and dimensions ? smd-2 i sd 45a, di/dt 260a/ s, v dd 75v, t j 150c ir world headquarters: 101 n sepulveda blvd., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 01/2015
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