advanced power n-channel enhancement mode electronics corp. power mosfet 100% avalanche test bv dss 700v fast switching characteristic r ds(on) 2.4 simple drive requirement i d 4a description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 continuous drain current, v gs @ 10v a i d @t c =100 continuous drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w w/ e as single pulse avalanche energy 2 mj i ar avalanche current a t stg t j operating junction temperature range thermal data symbol value units rthj-c maximum thermal resistance, junction-case 3.8 /w rthj-a maximum thermal resistance, junction-ambient 65 /w data & specifications subject to change without notice 200906254 parameter 15 33 linear derating factor 0.26 1 + 30 4 2.5 storage temperature range -55 to 150 4 -55 to 150 parameter AP04N70BI-H 8 rating 700 rohs-compliant product g d s a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. g d s to-220cfm(i) the to-220cfm package is widely preferred for commercial-industrial applications. the device is suited for switch mode power supplies, dc- a c converters and high current high speed switching circuits.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 700 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.6 - v/ r ds(on) static drain-source on-resistance 3 v gs =10v, i d =2a - - 2.4 ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =2a - 2.5 - s i dss drain-source leakage current v ds =600v, v gs =0v - - 10 ua drain-source leakage current (t j =125 o c) v ds =480v , v gs =0v - - 500 ua i gss gate-source leakage v gs =+ 30v, v ds =0v - - + 100 na q g total gate charge 3 i d =4a - 16.7 - nc q gs gate-source charge v ds =480v - 4.1 - nc q gd gate-drain ("miller") charge v gs =10v - 4.9 - nc t d(on) turn-on delay time 3 v dd =300v - 11 - ns t r rise time i d =4a - 8.3 - ns t d(off) turn-off delay time r g =10 , v gs =10v - 23.8 - ns t f fall time r d =75 - 8.2 - ns c iss input capacitance v gs =0v - 950 - pf c oss output capacitance v ds =25v - 65 - pf c rss reverse transfer capacitance f=1.0mhz - 6 - pf source-drain diode symbol parameter test conditions min. typ. max. units i s continuous source current ( body diode ) v d =v g =0v , v s =1.5v - - 4 a i sm pulsed source current ( body diode ) 1 --15 a v sd forward on voltage 3 t j =25 , i s =4a, v gs =0v - - 1.5 v notes: 1.pulse width limited by max. junction temperature 2.starting tj=25 o c , v dd =50v , l=1mh , r g =25 , i as =4a. 3.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP04N70BI-H
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature 3 AP04N70BI-H 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v) 0 0.4 0.8 1.2 1.6 2 2.4 2.8 -50 0 50 100 150 t j , junction temperature ( o c ) normalized r ds(on) v g =10v i d =2a 0 0.5 1 1.5 2 024681012 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c v g =4.0v v g =3.5v v g =4.5v v g =5.0v v g =6.0v v g =10v 0 0.5 1 1.5 2 2.5 01234567 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c v g =10v v g =6.0v v g =5.0v v g =4.5v v g =4.0v
fig 5. maximum drain current v.s. fig 6. typical power dissipation case temperature fig 7. maximum safe operating area fig 8. effective transient thermal impedance 4 AP04N70BI-H 0 10 20 30 40 0 50 100 150 t c , case temperature ( o c ) p d (w) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 25 50 75 100 125 150 t c , case temperature ( o c ) i d , drain current (a) 0.01 0.1 1 10 100 1 10 100 1000 10000 v ds (v) i d (a) t c =25 o c s in g le pulse 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty=0.5 single pulse
fig 9. gate charge characteristics fig 10. typical capacitance characteristics fig 11. forward characteristic of fig 12. gate threshold voltage v.s. reverse diode junction temperature 5 AP04N70BI-H 0 1 2 3 4 5 -50 0 50 100 150 t j , junction temperature ( o c ) v gs(th) (v) 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =4a v ds =480v v ds =400v v ds =320v 0 2 4 6 8 10 12 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 v sd (v) i s (a) t j = 25 o c t j =150 o c 1 100 10000 1 6 11 16 21 26 31 v ds (v) c (pf) f =1.0mhz ciss coss crss
fig 13. switching time circuit fig 14. switching time waveform fig 15. gate charge circuit fig 16. gate charge waveform 6 AP04N70BI-H t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 0.5x rated v ds to the oscilloscope - + 10 v d g s v ds v gs r g r d 0.8 x rated v ds to the oscilloscope - + d g s v ds v gs i d i g 1~ 3 m a
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