page 1 of 5 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com GALI-39-D+ 50 ? dc to 7 ghz wideband the big deal ? frequency range, dc to 7 ghz ? output power, 10.5 dbm typ. ? high gain, 19.7 db at 2 ghz product overview GALI-39-D+ (rohs compliant) is a wideband amplifer die offering high dynamic range. it uses patented transient protected darlington confguration and is fabricated using ingap hbt technology. GALI-39-D+ is designed to be rugged for supply switch-on transients. feature advantages broad band: dc to 7 ghz broadband covering primary wireless communications bands: cellular, pcs, lte low noise figure, 2.4 db typ. at 2 ghz a unique feature of the GALI-39-D+ which separates this design from all competitors is the low noise fgure performance in combination with the high ip3 resulting in high dynamic range. unpackaged die enables the user to integrate the amplifer directly into hybrids key features monolithic amplifer die
page 2 of 5 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com GALI-39-D+ 50 ? dc to 7 ghz rev. or m168961 GALI-39-D+ wp/rs/cp 180731 general description GALI-39-D+ (rohs compliant) is a wideband amplifer die offering high dynamic range. it uses patented transient protected darlington confguration and is fabricated using ingap hbt technology. GALI-39-D+ is designed to be rugged for supply switch-on transients. wideband ordering information: refer to last page simplifed schematic and pad description bonding pad position 1 2 3 4 0 0 l1 l 2 l 3 l 4 h1 h 2 h 4 h 3 gr ound rf in rf-out and dc-in pad # function description 1 rf in rf input pad. this pad requires the use of an external dc blocking capacitor chosen for the frequency of operation. 3 rf-out and dc-in rf output and bias pad. dc voltage is present on this pin; therefore a dc blocking capacitor is necessary for proper operation. an rf choke and bias resistor are needed to feed dc bias without loss of rf signal due to the bias connection, as shown in recom - mended application circuit. 2,4 ground ground pads. connect to ground per as - sembly diagram. product features ? frequency range, dc to 7 ghz ? internally matched to 50 ohms ? output power, 10.5 dbm typ. ? high gain, 19.7 db at 2ghz ? protected by us patent 6,943,629 typical applications ? cellular infrastructure ? military/defense ? vhf/uhf transmitter/receiver dimensions in m, typical note: 1. bond pad material - gold 2. bottom of die - gold plated monolithic amplifer die +rohs compliant the +suffix identifies rohs compliance. see our web site for rohs compliance methodologies and qualifications
page 3 of 5 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com GALI-39-D+ parameter ratings operating temperature -45c to 85c storage temperature -65c to 150c operating current 55 ma input power 13 dbm 3 permanent damage may occur if any of these limits are exceeded. electrical maximum ratings are not intended for continuous normal operation. absolute maximum ratings 3 1. measured on mini-circuits characterization test board tb-313, dut packaged in industry standard sot-89 package. see characterization test circuit (fig. 1) 2. guaranteed specifcation dc-7 ghz. low frequency cut off determined by external coupling capacitors. electrical specifcations 1 at 25c and 35ma, unless noted parameter min. typ. max. units frequency range* dc 7 ghz gain f=0.1 ghz 20.8 db f=1 ghz 21.1 f=2 ghz 19.7 f=3 ghz 17.7 f=4 ghz 17.0 f=5 ghz 16.1 f=7 ghz 17.6 f=10 ghz 9.8 input return loss f= dc to 3 ghz 12.5 db f= 3 to 7 ghz 11 output return loss f= dc to 3 ghz 14 db f= 3 to 7 ghz 8.0 output power @ 1 db compression f=7 ghz 10.5 dbm output ip3 f=2 ghz 22.9 dbm noise figure f=2 ghz 2.4 db recommended device operating current 35 ma device operating voltage 3.1 3.5 3.9 v device voltage variation vs. temperature at 35 ma -2.5 mv/c device voltage variation vs. current at 25c 2.9 mv/ma thermal resistance, junction-to-case 1 127 c/w monolithic e-phemt mmic amplifer die
page 4 of 5 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com GALI-39-D+ recommended application and characterization test circuit fig 1. block diagram of test circuit used for characterization. (dut, die packaged in sot-89 package, soldered on mini-circuits characterization test board tb-313) gain, return loss, output power at 1db compression (p1 db), output ip3 (oip3) and noise fgure measured using agilents n5242a pna-x microwave network analyzer. conditions: 1. gain and return loss: pin= -25dbm. 2. output ip3 (oip3): two tones, spaced 1 mhz apart, -5 dbm/tone at output. 4 2 3 1 c b l o c k i n c b l o c k i b i a s o u t v d r f c ( o p t i o n a l ) c b y p a s s v c c r b i a s ( r e q u i r e d ) r bias vcc 1% res. values (ohms) for optimum biasing 7 107 8 133 9 162 10 191 11 221 12 249 13 280 14 309 15 340 16 365 17 392 18 422 19 453 20 475 test board includes case, connectors, and components (in bold) soldered to pcb assembly diagram assembly and handling procedure 1. storage dice should be stored in a dry nitrogen purged desiccators or equivalent. 2. esd mmic hbt amplifer dice are susceptible to electrostatic and mechanical damage. die are supplied in antistatic protected material, which should be opened in clean room conditions at an appropriately grounded anti-static worksta tion. devices need careful handling using correctly designed collets, vacuum pickup tips or sharp antistatic tweezers to deter esd damage to dice. 3. die attach the die mounting surface must be clean and fat. using conductive silver flled epoxy, recommended epoxies are diemat dm6030hk-pt/h579 or ablestik 84-1lmisr4. apply suffcient epoxy to meet required epoxy bond line thickness, epoxy fllet height and epoxy coverage around total die periphery. parts shall be cured in a nitrogen flled atmosphere per manufacturers cure condition. it is recommended to use antistatic die pick up tools only. 4. wire bonding bond pad openings in the surface passivation above the bond pads are provided to allow wire bonding to the dice gold bond pads. thermosonic bonding is used with minimized ultrasonic content. bond force, time, ultrasonic power and temperature are all critical parameters. suggested wire is pure gold, 1 mil diameter. bonds must be made from the bond pads on the die to the package or substrate. all bond wires should be kept as short as low as reasonable to minimize performance degradation due to undesirable series inductance. rf in rf -ou t and dc -in ground monolithic e-phemt mmic amplifer die
page 5 of 5 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com GALI-39-D+ performance data data table swept graphs s-parameter (s2p files) data set with and without port extension (.zip fle) case style die die ordering and packaging information quantity, package model no. small, gel - pak: 5,10,50,100 kgd* medium ? , partial wafer: kgd*<3020 large ? , full wafer GALI-39-Dg+ GALI-39-Dp+ GALI-39-Df+ ? available upon request contact sales representative refer to an-60-067 environmental ratings env80 additional notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp d. mini-circuits does not warrant the accuracy or completeness of the information, text, graphics and other items contained within this document and same are provided as an accommodation and on an as is basis, with all faults. e. purchasers of this part are solely responsible for proper storing, handling, assembly and processing of known good dice (including, without limitation, proper esd preventative measures, die preparation, die attach, wire bond ing and related assembly and test activities), and mini-circuits assumes no responsibility therefor or for environmental effects on known good dice. f. mini-circuits and the mini-circuits logo are registered trademarks of scientifc components corporation d/b/a mini- circuits. all other third-party trademarks are the property of their respective owners. a reference to any third-party trademark does not constitute or imply any endorsement, affliation, sponsorship, or recommendation by any such third-party of mini-circuits or its products. esd rating** human body model (hbm): class 1a (250v to <500v) in accordance with ansi/esd stm 5.1 - 2001 additional detailed technical information additional information is available on our dash board. *known good dice (kgd) means that the dice in question have been subjected to mini-circuits dc test performance criteria and measurement instructions and that the parametric data of such dice fall within a predefned range. while dc testing is not defnitive, it does help to provide a higher degree of confdence that dice are capable of meeting typical rf electrical parameters specifed by mini-circuits. ** tested in industry standard sot-89 package monolithic e-phemt mmic amplifer die
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