MCS2010 dual n-channel mosfet features maximum r atings @ 25 o c unless ot herwise specified symbol parameter rating unit v ds drain-source voltage 20 v i d drain curren t-con tinu ous 10 a i d m pulsed drain current (note1) 36 a v gs gate-source voltage 10 v r j a 125 /w t j operating junction temperature -55 to +150 t stg storage temperature -55 to +150 revision: a 2016/02/03 inches mm dim mi nmax mi nmax note tssop-8 ? trenchfet power mosfet ? excellent r ds(on) and low gate charge ? halogen free available upon request by adding suffix "-hf" ? epoxy meets ul 94 v-0 flammability rating a 0.190 0.300 0.007 .012 b 0.650bsc. 0.026bsc. c 6.250 6.550 0.246 0.258 d 2.900 3.100 0.114 0.122 e 4.300 4.500 0.169 0.177 f --- 1.200 --- 0.047 g 0.800 1.000 0.031 0.039 h 0.500 0.700 0.020 0.028 j 0.090 0.200 0.004 0.008 k 0.050 0.150 0.002 0.006 l 0.250typ. 0.010typ. dimensions micro commercial components m c c r omponents 20736 marilla street chatsworth
www. mccsemi .com 1 of 4 notes: 1.. repetit ive rating: pulse width limited by junction temperature. a thermal resistance junction to ambient moisture s ensitivity l evel 1 m arking:s2010 c b d e f g h j k l d1/d2 s1 s1 g1 equivalent circuit d1/d2 s2 s2 g2 1 2 34 5 6 7 8
revision: a 2016/02/03 electrical characteristics(t a =25 unless otherwise specified) micro commercial components m c c r www. mccsemi .com 2 of 4 notes : 1.repetitive rating pluse width limited by maximum junction temperature 2.surface mounted on fr4 board t 10 sec. 3.. pulse test : pulse width 300 s, duty cycle 2%. 4. guaranteed by design, not subject to production. parameter symbol test condition min typ max unit static pa rameters drain-source br eakdown voltage v (br)dss v gs = 0v, i d =250a 20 v zero gate voltage drai n current i dss v ds =20v,v gs = 0v 11 ua gate-body leakage current i gss v gs =10v, v ds = 0v ua 10 gate threshold voltage (note 3) gs(th) v v ds =v gs , i d =250a 0.3 1 v drain-source on -resistance (note 3) ds(o r n) v gs =4.5v, i d =10a 5.5 9.5 m ? v gs =4v, i d =10a 5.8 10 m ? v gs =3.5v, i d =9a 9 10.5 m ? v gs =3.1v, i d =9a 9a 3 11.5 m ? v gs =2.5v, i d =8a 8a 8 13 m ? forwa rd tranconductance (note 3) fs g v ds =5v, i d =10a 65 s diode forwar d voltage (note 3) sd v s =1 i a, v gs = 0v 1 v dynamic p arameters (note 4) input capacitance c iss v ds =10v,v gs =0v,f =1mhz 1 000 1510 pf output capacitance c oss 150 290 pf reverse transfer capacitanc e c rss 100 235 pf switching parameters (note 4) turn-on delay t ime t d(on) v gs =4.5v,v ds =10v, r gen =3 ? ,r l =1 1.1 ns turn-on rise time t r 2.6 ns turn-off delay ti me t d(off) 7 ns turn-off fall time t f 7.4 ns total gate charge q g v ds =10v,v gs =4.5v i d =10a 10 15 nc gate-source chage q gs 5.5 nc gage-drain charge q gd 6.5 nc
m c c r revision: a 2016/02/03 www. mccsemi .com 3 of 4 7 \ s l f d o & |