lesd8lf5.3ct5g leshan radio company, ltd. shipping 10000/tape&reel lesd8lf5.3ct5g ordering information device marking k3 transient voltage suppressors esd protection diodes with ultra ? low capacitance the esd8lf is designed to protect voltage sensitive components that require ultra ? low capacitance from esd and transient voltage events. excellent clamping capability, low capacitance, low leakage, and fast response time, make these parts ideal for esd protection on designs where board space is at a premium. because of its low capacitance, it is suited for use in high frequency designs such as usb 2.0 high speed and antenna line applications. specification features: ? ultra low capacitance 0.4 pf ? low clamping voltage ? small body outline dimensions: 1.00 mm x 0.60 mm ? low body height: 0.5 mm ? stand ? off voltage: 5.3 v ? low leakage ? response time is typically < 1.0 ns ? iec61000 ? 4 ? 2 level 4 esd protection ? this is a pb ? free device mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic epoxy meets ul 94 v ? 0 lead finish: 100% matte sn (tin) qualified max reflow temperature: device meets msl 1 requirements 12 maximum ratings rating symbol value unit iec 61000 ? 4 ? 2 (esd) contact air 20 kv total power dissipation on fr ? 5 board (note 1) @ t a = 25 c p d 150 mw storage temperature range t stg ? 55 to +150 c junction temperature range t j ? 55 to +125 c lead solder temperature ? maximum (10 second duration) t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. fr ? 5 = 1.0 x 0.75 x 0.62 in. 260 c lesd8lf5.3ct5g rev.o 1/4 sod882 1 2
leshan radio company, ltd. lesd8lf5.3ct5g electrical characteristics (t a = 25 c unless otherwise noted) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current i f forward current v f forward voltage @ i f p pk peak power dissipation c capacitance @ v r = 0 and f = 1.0 mhz electrical characteristics (t a = 25 c unless otherwise noted) device device marking v rwm (v) i r ( a) @ v rwm v br (v) @ i t (note 2) i t c (pf) v c (v) @ i pp = 1 a (note 3) v c max max min ma max max per iec61000 ? 4 ? 2 (note 4) lesd8lf5.3ct5g k3 5.3 1.0 1.0 0.6 11 figures 1 and 2 see below 2. v br is measured with a pulse test current i t at an ambient temperature of 25 c. 3. surge current waveform per figure 4. 4. for test procedure see figures 3. figure 1. esd clamping voltage screenshot positive 8 kv contact per iec61000 ? 4 ? 2 figure 2. esd clamping voltage screenshot negative 8 kv contact per iec61000 ? 4 ? 2 rev.o 2/4 max 6.3 11 - 3 ? ? 3 3 o ? 3 o ? 3
leshan radio company, ltd. iec 61000 ? 4 ? 2 spec. level test voltage (kv) first peak current (a) current at 30 ns (a) current at 60 ns (a) 1 2 7.5 4 2 2 4 15 8 4 3 6 22.5 12 6 4 8 30 16 8 i peak 90% 10% iec61000 ? 4 ? 2 waveform 100% i @ 30 ns i @ 60 ns t p = 0.7 ns to 1 ns figure 3. iec61000 ? 4 ? 2 spec figure 4. 8 x 20 s pulse waveform 100 90 80 70 60 50 40 30 20 10 0 020406080 t, time ( s) % of peak pulse current t p t r pulse width (t p ) is defined as that point where the peak current decay = 8 s peak value i rsm @ 8 s half value i rsm /2 @ 20 s rev.o 3/4 lesd8lf5.3ct5g
leshan radio company, ltd. rev.o 4/4 lesd8lf5.3ct5g sod882 unit:mm dimension outline:
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