PKN4101 p - ch 4 0v fast switching mosfets 1 symbol parameter rating units 10s steady state v ds drain - source voltage - 4 0 v v gs gate - sou r ce voltage f 20 v i d @t a = 25 continuous drain current, v gs @ - 4.5 v 1 - 3 . 7 - 3. 2 a i d @t a = 7 0 continuous drain current, v gs @ - 4.5 v 1 - 3.0 - 2. 6 a i dm pulsed drain current 2 - 16.1 a p d @t a =25 total power dissipation 3 1.32 1 w p d @t a = 70 total power dissipation 3 0.84 0.64 w t stg sto rage temperature range - 55 to 150 t j operating junction temperature range - 55 to 150 symbol parameter typ. max. unit r ja thermal resistance junction - ambient 1 --- 125 /w r ja thermal re sistance junction - ambient 1 (t ? 10s) --- 95 /w r j c th ermal resistance junction - case 1 --- 80 /w bvdss rds on id - 4 0 v 70 m
- 3.2 a the PKN4101 is the high cell density trenched p - ch mosfets, which provides excellent rdson and efficiency for most of the small power s witching and load switch applications. the PKN4101 meet the rohs and green product requirement with full function reliability approved. ? green device available ? super low gate charge ? excellent cdv/dt effect decline ? advanced high cell density trench technology description absolute maximum ratings thermal data sot 23 pin configuration p roduct summa ry 1 www.paceleader.tw
symbol parameter conditions min. typ. max. unit bv dss drain - source breakdown voltage v gs =0v , i d = - 250ua - 4 0 --- --- v e bv dss / e t j bv dss temperature coefficient reference to 25 , i d = - 1ma --- - 0.0 1 8 --- v/ r ds(on) static drain - source on - resistance 2 v gs = - 4.5 v , i d = - 3 a --- --- 70 m : v gs = - 2 .5v , i d = - 2 a --- --- 10 0 v gs(th) gate threshold voltage v gs =v ds , i d = - 250ua - 1. 0 --- - 2.5 v e v gs(th) v gs(th) temperature coefficient --- 2. 5 --- m v/ i dss drain - s ource leakage current v ds = - 24 v , v gs =0v , t j =25 --- --- - 1 ua v ds = - 24 v , v gs =0v , t j =55 --- --- - 5 i gss gate - source leakage current v gs = f 2 0 v , v ds =0v --- --- f 100 na gfs forward transconductance v ds = - 5 v , i d = - 3 a --- 5. 8 --- s q g total gate charge ( - 4.5 v) v ds = - 32 v , v gs = - 4. 5v , i d = - 3 a --- 6.4 --- nc q gs gate - source charge --- 2.1 --- q gd gate - drain charge --- 2.5 --- t d(on) turn - on delay time v dd = - 20 v , v gs = - 4.5 v , r g = 3.3 : , i d = - 3 a --- 4.2 --- ns t r rise time --- 23 --- t d(off) turn - off de lay time --- 26.8 --- t f fall time --- 20.6 --- c iss input capacitance v ds = - 15 v , v gs =0v , f=1mhz --- 620 --- pf c oss output capacitance --- 65 --- c rss reverse transfer capacitance --- 53 --- symbol parameter conditions min. typ. max. unit i s continuous source current 1 , 4 v g =v d =0v , force current --- --- - 3. 2 a i sm pulsed source current 2 , 4 --- --- - 1 6.1 a v sd diode forward voltage 2 v gs =0v , i s = - 1 a , t j =25 --- --- - 1 v note : 1.the data tested by surface mounted on a 1 inch 2 fr - 4 board with 2oz copper. 2.the data tested by pulsed , pulse width ? 300us , duty cycle ? 2% 3.the power dissipation is limited by 150 junction temperature 4.the data is theoretically the same as i d and i dm , i n real applications , should be limited by total power dissipation. electrical characteristics (t j =25 , unless otherwise noted) diode character istics PKN4101 p - ch 4 0v fast switching mosfets 2 www.paceleader.tw
typical characteristics fig.1 typical output characteristics fig.2 on - resistance v s . g - s voltage fig. 3 forward c haracteristics o f r ever se diode fig. 4 gate - c har ge c haracteristics fig. 5 normalized v gs(th) vs. t j fig. 6 normalized r dson vs. t j PKN4101 p - ch 4 0v fast switching mosfets 3 www.paceleader.tw
0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r - $ ) p dm d = t on /t t jpeak = t c + p dm x r - & t on t 0.02 0.01 0.05 0.1 0.2 duty=0.5 single pulse fig .8 safe o perating a rea fig. 9 normalized maximum transient thermal impedance fig. 7 capacitance fig. 10 switching time waveform fig. 11 gate charge waveform PKN4101 p - ch 4 0v fast switching mosfets 4 www.paceleader.tw 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r ja ) p dm d = t on /t t jpeak = t c + p dm x r jc t on t 0.02 0.01 0.05 0.1 0.2 duty=0.5 single pulse
PKN4101 p - ch 4 0v fast switching mosfets p a c k a g e i n f o r m a t i o n ( s o t - 2 3 ) 5 www.paceleader.tw
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