31gf6-e3 www.vishay.com vishay general semiconductor revision: 19-feb-16 1 document number: 88530 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ultrafast plastic rectifier features ? glass passivated pellet chip junction ? ultrafast reverse recovery time ? low forward voltage drop ? low switching losses, high efficiency ? high forward surge capability ? solder dip 275 c max. 10 s, per jesd 22-b106 ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer and telecommunication. mechanical data case: do-201ad ? molding compound meets ul 94 v-0 flammabi lity rating ? base p/n-e3 - rohs-co mpliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? e3 suffix meets jesd 201 class 1a whisker test polarity: color band denotes cathode end note (1) pulse test: 300 s pulse width, 1 % duty cycle primary characteristics i f(av) 3.0 a v rrm 600 v i fsm 90 a t rr 30 ns v f 1.6 v t j max. 150 c package do-201ad diode variatio ns single die do-201ad maximum ratings (t a = 25 c unless otherwise noted) parameter symbol value unit maximum repetitive pe ak reverse voltage v rrm 600 v maximum rms voltage v rms 420 v maximum dc blocking voltage v dc 600 v maximum average forward rectified current, ? 0.375" (9.5 mm) lead length at t l = 110 c i f(av) 3.0 a peak forward surge current 8. 3 ms single ha lf sine-wave superimposed on rated load i fsm 90 a operating junction and storage temperature range t j , t stg -40 to +150 c reverse avalanche energy (8/20 s surge) e ar 10 mj electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol value unit minimum reverse breakdown voltage 10 a v br 600 v maximum instantaneous forward voltage 3.0 a v f (1) 1.6 v maximum dc reverse current ? at rated dc blocking voltage i r 20 a maximum reverse recovery time i f = 0.5 a, i r = 1.0 a, ? i rr = 0.25 a t rr 30 ns
31gf6-e3 www.vishay.com vishay general semiconductor revision: 19-feb-16 2 document number: 88530 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) thermal resistance from junction to am bient at 0.375" (9.5 mm) lead length ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current derating curve fig. 2 - maximum non-repetitive peak forward surge current fig. 3 - typical forward voltage fig. 4 - typical reverse current thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol value unit typical thermal resistance r ? ja (1) 30 c/w r ? jl (1) 8.0 ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode 31gf6-e3/54 1.13 54 1400 13" diam eter paper tape and reel 31gf6-e3/73 1.13 73 1000 ammo pack packaging 0 1.0 1.5 2.0 2.5 3.0 3.5 75 50 25 0 100 125 150 175 0.5 average forwar d rectified current (a) lead temperature (c) p.c.b. mounted on 3 " x 3 " (76.2 mm x 76.2 mm) copper pad area s 0 20 40 60 80 100 1 100 10 number of cycle s at 60 hz peak forwar d s urge current (a) 0.2 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.01 0.1 10 100 1 2.0 in s tantaneou s forward voltage (v) in s tantaneou s forward current (a) t j = 150 c t j = 25 c t j = 100 c 60 40 20 0 100 80 0.01 0.001 0.1 10 1 100 1000 percent of rated peak rever s e voltage (%) in s tantaneou s rever s e current (a) t j = 150 c t j = 25 c t j = 100 c
31gf6-e3 www.vishay.com vishay general semiconductor revision: 19-feb-16 3 document number: 88530 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical junction capacitance ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? package outline dimensions in inches (millimeters) 10 1 100 100 10 1 rever s e voltage (v) junction capacit ance (pf) t j = 25 c f = 1.0 mhz v s ig = 50 mv p-p do-201ad 0.210 (5.3) 0.190 (4.8) dia. 0.052 (1.32) 0.048 (1.22) dia. 1.0 (25.4) min. 1.0 (25.4) min. 0.375 (9.5) 0.285 (7.2)
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