? semiconductor components industries, llc, 2016 october, 2016 ? rev. 10 1 publication order number: mmbt2369lt1/d mmbt2369l, mmbt2369al switching transistors npn silicon features ? s prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant* maximum ratings rating symbol value unit collector ?emitter voltage v ceo 15 vdc collector ?emitter voltage v ces 40 vdc collector ?base voltage v cbo 40 vdc emitter ?base voltage v ebo 4.5 vdc collector current ? continuous i c 200 madc thermal characteristics characteristic symbol max unit total device dissipation fr? 5 board (note 1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction?to?ambient r ja 556 c/w total device dissipation alumina substrate, (note 2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction?to?ambient r ja 417 c/w junction and storage temperature t j , t stg ?55 to +150 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. fr? 5 = 1.0 0.75 0.062 in. 2. alumina = 0.4 0.3 0.024 in. 99.5% alumina. *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. device package shipping ? ordering information marking diagram collector 3 1 base 2 emitter www. onsemi.com xxx = m1j or 1ja m = date code* = pb?free package *date code orientation and/or overbar may vary depending upon manufacturing location. (note: microdot may be in either location) mmbt2369alt1g sot?23 (pb?free) 3,000 / tape & reel mmbt2369lt1g sot?23 (pb?free) 3,000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specification s brochure, brd8011/d. sot?23 case 318 style 6 1 xxx m smmbt2369lt1g sot?23 (pb?free) 3,000 / tape & reel SMMBT2369ALT1G sot?23 (pb?free) 3,000 / tape & reel
mmbt2369l, mmbt2369al www. onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ?emitter breakdown voltage (note 3) (i c = 10 madc, i b = 0) v (br)ceo 15 ? ? vdc collector ?emitter breakdown voltage (i c = 10 adc, v be = 0) v (br)ces 40 ? ? vdc collector ?base breakdown voltage (i c = 10 adc, i e = 0) v (br)cbo 40 ? ? vdc emitter ?base breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo 4.5 ? ? vdc collector cutoff current (v cb = 20 vdc, i e = 0) (v cb = 20 vdc, i e = 0, t a = 150 c) i cbo ? ? ? ? 0.4 30 adc collector cutoff current mmbt2369a (v ce = 20 vdc, v be = 0) i ces ? ? 0.4 adc on characteristics dc current gain (note 3) mmbt2369 (i c = 10 madc, v ce = 1.0 vdc) mmbt2369a (i c = 10 madc, v ce = 1.0 vdc) mmbt2369a (i c = 10 madc, v ce = 0.35 vdc) mmbt2369a (i c = 10 madc, v ce = 0.35 vdc, t a = ?55 c) mmbt2369a (i c = 30 madc, v ce = 0.4 vdc) mmbt2369 (i c = 100 madc, v ce = 2.0 vdc) mmbt2369a (i c = 100 madc, v ce = 1.0 vdc) h fe 40 ? 40 20 30 20 20 ? ? ? ? ? ? ? 120 120 ? ? ? ? ? ? collector ?emitter saturation voltage (note 3) mmbt2369 (i c = 10 madc, i b = 1.0 madc) mmbt2369a (i c = 10 madc, i b = 1.0 madc) mmbt2369a (i c = 10 madc, i b = 1.0 madc, t a = +125 c) mmbt2369a (i c = 30 madc, i b = 3.0 madc) mmbt2369a (i c = 100 madc, i b = 10 madc) v ce(sat) ? ? ? ? ? ? ? ? ? ? 0.25 0.20 0.30 0.25 0.50 vdc base ?emitter saturation voltage (note 3) mmbt2369/a (i c = 10 madc, i b = 1.0 madc) mmbt2369a (i c = 10 madc, i b = 1.0 madc, t a = ?55 c) mmbt2369a (i c = 30 madc, i b = 3.0 madc) mmbt2369a (i c = 100 madc, i b = 10 madc) v be(sat) 0.7 ? ? ? ? ? ? ? 0.85 1.02 1.15 1.60 vdc small? signal characteristics output capacitance (v cb = 5.0 vdc, i e = 0, f = 1.0 mhz) c obo ? ? 4.0 pf small signal current gain (i c = 10 madc, v ce = 10 vdc, f = 100 mhz) h fe 5.0 ? ? ? switching characteristics storage time (i b1 = i b2 = i c = 10 madc) t s ? 5.0 13 ns turn?on time (v cc = 3.0 vdc, i c = 10 madc, i b1 = 3.0 madc) t on ? 8.0 12 ns turn?off time (v cc = 3.0 vdc, i c = 10 madc, i b1 = 3.0 madc, i b2 = 1.5 madc) t off ? 10 18 ns product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 3. pulse test: pulse width 300 s, duty cycle 2.0%.
mmbt2369l, mmbt2369al www. onsemi.com 3 figure 1. t on circuit ? 10 ma figure 2. t on circuit ? 100 ma figure 3. t off circuit ? 10 ma figure 4. t off circuit ? 100 ma figure 5. turn?on and turn?off time test circuit +10.6 v -1.5 v 0 t 1 < 1 ns pulse width (t 1 ) = 300 ns duty cycle = 2% 3 v 270 3.3 k c s * < 4 pf 10 v 95 1 k c s * < 12 pf +10.8 v -2 v 0 t 1 < 1 ns pulse width (t 1 ) = 300 ns duty cycle = 2% +10.75 v 0 -9.15 v t 1 < 1 ns pulse width (t 1 ) = 300 ns duty cycle = 2% < 1 ns -8.6 v +11.4 v t 1 0 pulse width (t 1 ) between 10 and 500 s duty cycle = 2% 270 3.3 k c s * < 4 pf 95 1 k c s * < 12 pf 10 v 1n916 v out 90% 10% v in 0 t on v in 3.3 k 50 220 50 0.1 f v out 3.3 k 0.0023 f 0.0023 f 0.005 f 0.005 f 0.1 f 0.1 f v bb + - + - v cc = 3 v v in 0 90% 10% t off v out v bb = +12 v v in = -15 v to oscilloscope input impedance = 50 rise time = 1 ns turn-off waveforms pulse generator v in rise time < 1 ns source impedance = 50 pw 300 ns duty cycle < 2% turn-on waveforms *total shunt capacitance of test jig and connectors. *total shunt capacitance of test jig and connectors.
mmbt2369l, mmbt2369al www. onsemi.com 4 6 5 4 3 2 1 10 0.1 0.2 0.5 1.0 2.0 5.0 reverse bias (volts) capacitance (pf) switching times (nsec) limit typical c ob c ib t j = 25 c figure 6. junction capacitance variations 100 2 5 10 20 50 1 2 5 10 20 50 100 i c , collector current (ma) figure 7. typical switching times f = 10 v cc = 10 v v ob = 2 v t r (v cc = 3 v) v cc = 10 v t d t s t r t f +6 v -4 v 0 t 1 < 1 ns pulse width (t 1 ) = 300 ns duty cycle = 2% 10 v 980 500 c s * < 3 pf c c opt time c < c opt c = 0 figure 8. turn?off waveform figure 9. storage time equivalent test circuit v ce , maximum collector-emitter voltage (volts) 1.0 0.8 0.6 0.4 0.2 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 i c = 3 ma i c = 10 ma i c = 30 ma i c = 50 ma i c = 100 ma t j = 25 c i b , base current (ma) figure 10. maximum collector saturation voltage characteristics
mmbt2369l, mmbt2369al www. onsemi.com 5 h fe , minimum dc current gain v (sat) , saturation voltage (volts) 200 100 20 50 1 2 5 10 20 50 100 i c , collector current (ma) figure 11. minimum current gain characteristics v ce = 1 v t j = 125 c 75 c 25 c -15 c -55 c t j = 25 c and 75 c 1.4 1.2 1.0 0.8 0.6 0.4 0.2 1 2 5 10 20 50 100 i c , collector current (ma) figure 12. saturation voltage limits f = 10 t j = 25 c max v be(sat) min v be(sat) max v ce(sat)
mmbt2369l, mmbt2369al www. onsemi.com 6 package dimensions sot?23 (to?236) case 318?08 issue ar style 6: pin 1. base 2. emitter 3. collector d a1 3 1 2 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of the base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. soldering footprint view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.000 b 0.37 0.44 0.50 0.015 c 0.08 0.14 0.20 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.30 0.43 0.55 0.012 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.027 c 0 ??? 10 0 ??? 10 t t 3x top view side view end view 2.90 0.80 dimensions: millimeters 0.90 pitch 3x 3x 0.95 recommended on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 mmbt2369lt1/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative ?
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