? 2014 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 ? c to 150 ? c 300 v v dgr t j = 25 ? c to 150 ? c, r gs = 1m ? 300 v v gss continuous ? 20 v v gsm transient ? 30 v i d25 t c = 25 ? c 102 a i dm t c = 25 ? c, pulse width limited by t jm 440 a i a t c = 25 ? c80a e as t c = 25 ? c5j p d t c = 25 ? c 570 w dv/dt i s ? i dm , v dd ? v dss , t j ? 150 ? c 20 v/ns t j -55 ... +150 ? c t jm 150 ? c t stg -55 ... +150 ? c t l maximum lead temperature for soldering 300 c t sold plastic body for 10s 260 c v isol 50/60 hz, 1 minute 2500 v~ f c mounting force 50..200 / 11..45 n/lb weight 8 g symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 300 v v gs(th) v ds = v gs , i d = 8ma 3.0 5.0 v i gss v gs = ? 20v, v ds = 0v ?????????????????????? 200 na i dss v ds = v dss , v gs = 0v 50 ? a note 2, t j = 125 ? c 3 ma r ds(on) v gs = 10v, i d = 80a, note 1 20 m ? n-channel enhancement mode avalanche rated fast intrinsic diode MMIX1F160N30T ds100437a(9/14) v dss = 300v i d25 = 102a r ds(on) ? ? ? ? ? 20m ? ? ? ? ? features ? silicon chip on direct-copper bond (dcb) substrate ? isolated substrate - excellent thermal transfer - increased temperature and power cycling capability - high isolation voltage (2500 v~) ? very high current handling capability ? fast intrinsic diode ? avalanche rated ? very low r ds(on) advantages ? easy to mount ? space savings ? high power density applications ? dc-dc converters and off-line ups ? primary-side switch ? high speed power switching applications (electrically isolated tab) gigamos tm trench tm hiperfet tm power mosfet g d s isolated tab d s g g = gate d = drain s = source t rr ? ? ? ? ? 200ns preliminary technical information
ixys reserves the right to change limits, test conditions, and dimensions. MMIX1F160N30T ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 60a, note 1 90 150 s c iss 24.5 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 1825 pf c rss 45 pf r gi gate input resistance 1.1 ?? t d(on) 34 ns t r 68 ns t d(off) 90 ns t f 23 ns q g(on) 376 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 80a 140 nc q gd 56 nc r thjc 0.22 ?? c/w r thcs 0.05 ? c/w r thja 30 ? c/w source-drain diode symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. i s v gs = 0v 160 a i sm repetitive, pulse width limited by t jm 640 a v sd i f = 100a, v gs = 0v, note 1 1.4 v t rr 200 ns i rm 13 a q rm 1.06 c resistive switching times v gs = 15v, v ds = 0.5 ? v dss , i d = 80a r g = 1 ? (external) i f = 80a, v gs = 0v -di/dt = 100a/ ? s v r = 75v notes: 1. pulse test, t ? 300 s, duty cycle, d ? 2%. 2. part must be heatsunk for high-temp i dss measurement. preliminary technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2014 ixys corporation, all rights reserved MMIX1F160N30T fig. 1. output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 160 0.00.40.81.21.62.02.42.83.2 v ds - volts i d - amperes v gs = 10v 6v 5v 7v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 02468101214161820 v ds - volts i d - amperes v gs = 10v 5v 6v 7v fig. 3. output characteristics @ t j = 125oc 0 20 40 60 80 100 120 140 160 01234567 v ds - volts i d - amperes v gs = 10v 7v 6v 5v 4v fig. 4. r ds(on) normalized to i d = 80a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 160a i d = 80a fig. 5. r ds(on) normalized to i d = 80a value vs. drain current 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0 40 80 120 160 200 240 280 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 20 40 60 80 100 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. MMIX1F160N30T fig. 7. input admittance 0 20 40 60 80 100 120 140 160 180 200 3.4 3.8 4.2 4.6 5.0 5.4 5.8 6.2 6.6 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 50 100 150 200 250 300 0 20 40 60 80 100 120 140 160 180 200 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 50 100 150 200 250 300 350 q g - nanocoulombs v gs - volts v ds = 150v i d = 80a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1,000 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds( on ) limit
? 2014 ixys corporation, all rights reserved MMIX1F160N30T fig. 14. resistive turn-on rise time vs. drain current 30 40 50 60 70 80 90 80 90 100 110 120 130 140 150 160 i d - amperes t r - nanoseconds r g = 1 ? , v gs = 15v v ds = 150v t j = 125oc t j = 25oc fig. 15. resistive turn-on switching times vs. gate resistance 20 60 100 140 180 220 260 300 12345678910 r g - ohms t r - nanoseconds 0 20 40 60 80 100 120 140 t d ( o n ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 15v v ds = 150v i d = 160a i d = 80a fig. 16. resistive turn-off switching times vs. junction temperature 16 18 20 22 24 26 28 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 70 80 90 100 110 120 130 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = 15v v ds = 150v i d = 80a i d = 160a fig. 13. resistive turn-on rise time vs. junction temperature 20 30 40 50 60 70 80 90 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 1 ? , v gs = 15v v ds = 150v i d = 160a i d = 80a fig. 17. resistive turn-off switching times vs. drain current 16 18 20 22 24 26 28 80 90 100 110 120 130 140 150 160 i d - amperes t f - nanoseconds 70 80 90 100 110 120 130 t d ( o f f ) - nanoseconds t f t d(off ) - - - - r g = 1 ? , v gs = 15v v ds = 150v t j = 25oc, 125oc fig. 18. resistive turn-off switching times vs. gate resistance 0 100 200 300 400 500 600 700 12345678910 r g - ohms t f - nanoseconds 0 80 160 240 320 400 480 560 t d ( o f f ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 15v v ds = 150v i d = 160a i d = 80a
ixys reserves the right to change limits, test conditions, and dimensions. MMIX1F160N30T fig. 19. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w ixys ref: f_160n30t (9e-n32) 9-18-14-a
? 2014 ixys corporation, all rights reserved MMIX1F160N30T pin: 1 = gate 5-12 = source 13-24 = drain package outline
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