(ie.iie.ii ^emi-donducto'i lpioaucti., one.. &^ *j 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 mje370 pnp MJE520 npn silicon complementary power transistors jedec to-126 case mje370, MJE520 types are complementary silicon power transistors designed for use in general purpose amplifier and switching applications. maximum ratings (tc=25c) collector-base voltage collector-emitter voltage emitter-base voltage col lector current collector current (peak) powe r 0 i s s i pa t i on operating and storage junction temperature thermal resistance electrical characteristics (tc=25c) symbol test conditions symbol vcbo vceo vebo cm 9jc stg 30 30 4.0 3-0 7.0 25 -65 to -1-150 5.0 'cbo iebo vcb=30v veb=4.ov lc=100ma vce=1.0v, ic=1.0a min 30 25 max 100 100 unit v v v a a w c c/w unit pa v nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors entourages customers to verify that datasheets are current before placing orders. quality semi-conductors
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