preliminary datasheet LPM9013 LPM9013 C 00 version 1.0 datasheet dec.- 2008 www.lowpowersemi.com p age 1 of 7 LPM9013 p-channel enhancem ent mode field effect transistor general description the LPM9013 is the p-channel logic enhancement mode power field effect transistors are produced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching. ordering information LPM9013- f: pb-free package type b3: sot23 features -20v/-2.6a,r dc(on) =125m ? (typ.)@v gs =-2.5v -20v/-3.0a,r dc(on) =98m ? (typ.)@v gs =-4.5v super high density cell design for extremely low r dc(on) sot23 package applications portable media players cellular and smart mobile phone lcd dsc sensor wireless card marking information please see website. pin configurations sot23l(top view)
preliminary datasheet LPM9013 LPM9013 C 00 version 1.0 datasheet dec.- 2008 www.lowpowersemi.com p age 2 of 7 functional pin description
preliminary datasheet LPM9013 LPM9013 C 00 version 1.0 datasheet dec.-2008 www.lowpowersemi.com page 3 of 7
preliminary datasheet LPM9013 LPM9013 C 00 version 1.0 datasheet dec.-2008 www.lowpowersemi.com page 4 of 7
preliminary datasheet LPM9013 LPM9013 C 00 version 1.0 datasheet dec.-2008 www.lowpowersemi.com page 5 of 7
preliminary datasheet LPM9013 LPM9013 C 00 version 1.0 datasheet dec.-2008 www.lowpowersemi.com page 6 of 7
preliminary datasheet LPM9013 LPM9013 C 00 version 1.0 datasheet dec.- 2008 www.lowpowersemi.com p age 7 of 7 packaging information
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