pseudo sram contact us: psram@winbond.com part no. w966d6hbg datasheet description this is a 64m bit cellularram? compliant products, organiz ed as 4m word by 16 bite; high-speed, cmos pseudo-static random access memories developed for low-power, portable applications. features supports asynchronous and burst operations vcc, vccq voltages:1.7v?1.95v vcc, 1.7v?1.95v vccq random access time: 70ns burst mode read and write access: 4, 8, 16, or 32 words, or continuous burst burst wrap or sequential max clock rate: 133 mhz (tclk = 7.5ns) taclk: 5.5ns at 133 mhz, 7ns at 104 mhz low-power features: tcr, par, dpd page mode read access:sixteen-word page size interpage read access: 70ns, intrapage read access: 20ns diagram n/a package 54vfbga(6x8x1.0mm), rohs compliant other files ibis model n/a spice model n/a verilog model n/a development tools n/a others n/a page 1 of 1 winbond - pseudo sram 2 / 24 / 201 5 htt p ://www.winbon d -usa.com/h q /enu/productandsales/produc tlines/mobileram/pseud o ...
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