VRF161(mp) 50v, 200w, 150mhz the VRF161 is a gold-metallized silicon n-channel rf power transistor de- signed for broadband commercial and military applic ations requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. features ? improved ruggedness v (br)dss = 170v ? 200w with 24db typical gain @ 30mhz, 50v ? 200w with 14db typical gain @ 150mhz, 50v ? excellent stability & low imd ? available in matched pairs ? 70:1 load vswr capability at speciied operating conditions? nitride passivated ? refractory gold metallization ? high power replacement for mrf151 ? rohs compliant symbol parameter VRF161(mp) unit v dss drain-source voltage 170 v i d continuous drain current @ t c = 25c 20 a v gs gate-source voltage 40 v p d total device dissipation @ t c = 25c 350 w t stg storage temperature range -65 to 150 c t j operating junction temperature 200 rf power vertical mosfet maximum ratings all ratings: t c =25 c unless otherwise speciied static electrical characteristics symbol parameter min typ max unit v (br)dss drain-source breakdown voltage (v gs = 0v, i d = 100ma) 170 180 v v ds(on) on state drain voltage (i d(on) = 10a, v gs = 10v) 1.7 2.0 i dss zero gate voltage drain current (v ds = 100v, v gs = 0v) 1 ma i gss gate-source leakage current (v ds = 20v, v ds = 0v) 1.0 a g fs forward transconductance (v ds = 10v, i d = 5a) 6.0 8.1 mhos v gs(th) gate threshold voltage (v ds = 10v, i d = 100ma) 2.9 3.6 4.4 v microsemi website - http://www.microsemi.com 050-4977 rev b 7-2014 thermal characteristics symbol characteristic min typ max unit r jc junction to case thermal resistance 0.50 c/w caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. m174 downloaded from: http:///
10 100 1,000 10,000 0 25 50 75 100 125 150 VRF161(mp) dynamic characteristics symbol parameter test conditions min typ max unit c iss input capacitance v gs = 0v 500 pf c oss output capacitance v ds = 150v 180 c rss reverse transfer capacitance f = 1mhz 20 functional characteristics symbol parameter min typ max unit g ps f 1 = 30mhz, v dd = 50v, i dq = 250ma, p out = 200w 20 24 db g ps f = 150mhz, v dd = 50v, i dq = 250ma, p out = 200w 14 d f 1 = 30mhz, v dd = 50v, i dq = 250ma, p out = 200w 50 % imd (d3) f 1 = 30mhz, f 2 = 30.001mhz, v dd = 50v, i dq = 250ma, p out = 200w pep 1 -30 dbc f = 30mhz, v dd =50v, i dq = 250ma, p out = 200w cw 70:1 vswr - all phase angles, 0.2msec x 20% duty factor no degradation in output power 1. to mil-std-1311 version a, test method 2204b, two tone, reference each tone microsemi reserves the right to change, without notice, the speciications and information contained herein. 050-4977 rev b 7-2014 1 10 100 1 10 100 800 0 5 10 15 20 25 30 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 30 35 c iss v ds(on ) , drain-to-source voltage (v) figure 1, output characteristics i d , drain current (a) i d , drain current (a) t j = 125c v ds , drain-to-source voltage (v) figure 3, capacitance vs drain-to-source voltage c, capacitance (pf) v ds , drain-to-source voltage (v) figure 4, forward safe operating area i d , drain current (a) 4v 5v 6v 7v 10v 17v v gs , gate-to-source voltage (v) figure 2, transfer characteristics 250s pulse test<0.5 % duty cycle t j = -55c t j = 25c c oss c rss t j = 200c t c = 25c typical performance curves 5.5v 4.5v 3.5v r ds(on) dc line v ds max 10ms 100ms 1ms 1us downloaded from: http:///
VRF161(mp) 050-4977 rev b 7-2014 0 0.1 0.2 0.3 0.4 0.5 0.6 10 -5 10 -4 10 -3 10 -2 0.1 1 0.5 single pulse 0.1 0.3 0.7 0.05 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : t 1 = pulse duration z jc , thermal impedance (c/w) rectangular pulse duration (seconds) figure 5. maximum effective transient thermal impedance junction-to-case vs pulse duration typical performance curves 0.9 table 1. typical class ab large signal impedances rectangular pulse duration (seconds) figure 5a. maximum effective transient thermal impedance junction-to-case vs pulse duration freq zin* zout* 2.00mhz 24- j4.01 6.15-j0.13 13.56mhz 11.3- j10.6 6.11-j0.9 30mhz 5.36- j6.7 5.68-j1.81 100mhz 3.5- j2.91 2.35-j4.12 150mhz 3.45- j1.83 1.81-j2.99 zin - gate shunted with 25 ohms idq = .25a zol = conj of opt load for 200w out at vdd = 50v 36 38 40 42 44 46 48 50 52 54 56 22 23 24 25 26 27 15 20 25 30 0 50 100 150 200 250 300 350 400 0 10 20 30 40 50 60 70 80 90 0 0.2 0.4 0.6 0.8 1.0 1.2 p in , (dbm) figure 6. p out and gain vs p in pout (dbrn) p out (w) p in , (dbm) figure 7. eff and p out vs. p in freq=30mhz vdd=40v vdd=50v gain p out freq=30mhz 0.0358 0.105 0.2023 0.0029f 0.0028f 0.0365f .4585f figure 5b, transient thermal impedance rc model t j (c) 0.1568 t c (c) downloaded from: http:///
VRF161(mp) 050-4977 rev b 7-2014 150 mhz test circuit + 50vdc + c8 c4 c6 c7 l2 c3 r2 r1 c5 l1 c2 c1 bias0-12v c9 c10 rf input rf output c1 -- 470 pf atc 700bc2, c5, c6 - c9 -- 0.1uf 100v c3 -- 220pf clad mica c4 -- 15pf, atc 700b c10 -- 10uf, 100v electrolytic l1 - vk200-4bl2 -- 2 ferrite beads, 2.0 uh r1, r2 -- 100 ? , 2w smt r3 -- 1 ? , 2w smt t1 -- 9:1 transformert2 -- 1:9 transformer dut t2 t1 r3 30 mhz test circuit rfc1 + 50vdc + + c9 c8 c7 c3 c2 l3 l2 c6 r1 r2 r3 c4 c5 l1 c1 bias0-12v c10 c11 l4 rf input rf output c1, c2, c8 -- arco 463 or equivalentc3 -- 25pf, unelco c4 -- 0.1uf, ceramic smt 50v c5 -- 1.0 uf, 15 wv tantalum c6 -- 250pf, unelco j101 c7-- 25pf, unelco j101 c9 -- arco 262 or equivalent c10 -- 50nf, ceramic smt 100vc11 -- 15uf, 63wv electrolytic l1 -- 3/4", #18 into hairpin l2 -- printed line, 0.200" w x 0.500" l l3 -- 1", #16 into hairpin approx 16nh l4 -- 2 turns #16, 5/16" id rfc1 - vk200-4b r1-r3 -- 330 ? , 1/4w carbon dut downloaded from: http:///
VRF161(mp) 050-4977 rev b 7-2014 a u m m q r b 1 4 3 2 d k e seating plane c j h pin 1 - source pin 2 - gate pin 3 - source pin 4 - drain .5 soe package outline all dimensions are .005 dim inches millimeters min max min max a 0.960 0.990 24.39 25.14 b 0.465 0.510 11.82 12.95 c 0.229 0.275 5.82 6.98 d 0.216 0.235 5.49 5.96 e 0.084 0.110 2.14 2.79 h 0.144 0.178 3.66 4.52 j 0.003 0.007 0.08 0.17 k 0.435 11.0 m 45 nom 45 nom q 0.115 0.130 2.93 3.30 r 0.246 0.255 6.25 6.47 u 0.720 0.730 18.29 18.54 adding mp at the end of p/n speciies a matched pair where v gs(th) is matched between the two parts. v th values are marked on the devices per the following table. code vth range code 2 vth range a 2.900 - 2.975 m 3.650 - 3.725 b 2.975 - 3.050 n 3.725 - 3.800 c 3.050 - 3.125 p 3.800 - 3.875 d 3.125 - 3.200 r 3.875 - 3.950 e 3.200 - 3.275 s 3.950 - 4.025 f 3.275 - 3.350 t 4.025 - 4.100 g 3.350 - 3.425 w 4.100 - 4.175 h 3.425 - 3.500 x 4.175 - 4.250 j 3.500 - 3.575 y 4.250 - 4.325 k 3.575 - 3.650 z 4.325 - 4.400 v th values are based on microsemi measurements at datasheet conditions with an accuracy of 1.0%. downloaded from: http:///
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