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SI4730EY vishay siliconix new product document number: 71177 s-00823erev. a, 01-may-00 www.vishay.com faxback 408-970-5600 1 current sensing mosfet, n-channel 30-v (d-s)
v ds (v) r ds(on) ( ) i d (a) 30 0.015 @ v gs = 10 v 11.7 30 0.020 @ v gs = 4.5 v 10.1 sense d kelvin d sd g d so-8 5 6 7 8 top view 2 3 4 1 n-channel mosfet g d s sense kelvin
parameter symbol 10 secs steady state unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (t j = 150 c) a t a = 25 c i d 11.7 8.0 a continuous drain current (t j = 150 c) a t a = 70 c i d 9.8 6.7 a pulsed drain current (10 s pulse width) i dm 40 a continuous source current (diode conduction) a i s 3.3 1.6 maximum power dissipation a t a = 25 c p d 3.6 1.7 w maximum power dissipation a t a = 70 c p d 2.5 1.2 w operating junction and storage temperature range t j , t stg 55 to 175 c parameter symbol typical maximum unit maximum junction - to - ambient a t 10 sec r thja 35 42 c/w m ax i mum j unc ti on- t o- a m bi en t a steady state r thja 77 90 c/w maximum junction-to-foot (drain) steady state r thjf 18 22 notes a. surface mounted on 1o x 1o fr4 board.
SI4730EY vishay siliconix new product www.vishay.com faxback 408-970-5600 2 document number: 71177 s-00823erev. a, 01-may-00

parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a zero gate v oltage drain current i dss v ds = 30 v, v gs = 0 v, t j = 55 c 25 a on-state drain current a i d(on) v ds 5 v, v gs = 10 v 40 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 11.7 a 0.0125 0.015 drain - source on - state resistance a r ds( on ) v gs = 4.5 v, i d = 10.1 a 0.015 0.020 forward transconductance a g fs v ds = 15 v, i d = 11.7 a 35 s diode forward voltage a v sd i s = 3.3 a, v gs = 0 v 0.75 1.1 v dynamic b total gate charge q g v15vv10vi117a 34 50 c gate-source charge q gs v ds = 15 v, v gs = 10 v, i d = 11.7 a 7 nc gate-drain charge q gd 5.6 turn-on delay time t d(on) v15vr15 13 26 rise time t r v dd = 15 v, r l = 15 i 1 a v 10 v r 6 10 20 turn-off delay time t d(off) dd , l i d 1 a, v gen = 10 v, r g = 6 60 120 ns fall time t f 20 40 source-drain reverse recovery time t rr i f = 3.3 a, di/dt = 100 a/ s 30 60 current sense characteristics current sensing ratio r i d = 1 a, v gss = 10 v, r sense = 2.2 360 450 540 mirror active resistance r m(on) v gs = 10 v, i d = 10 ma 3.5 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing.

0 8 16 24 32 40 01234 0 8 16 24 32 40 0 0.5 1.0 1.5 2.0 2.5 3.0 v gs = 10 thru 4 v t c = 125 c 55 c 2 v 25 c output characteristics transfer characteristics v ds drain-to-source voltage (v) drain current (a) i d v gs gate-to-source voltage (v) drain current (a) i d 3 v
SI4730EY vishay siliconix new product document number: 71177 s-00823erev. a, 01-may-00 www.vishay.com faxback 408-970-5600 3
on-resistance ( r ds(on) ) 0 500 1000 1500 2000 2500 3000 0 6 12 18 24 30 0.6 0.8 1.0 1.2 1.4 1.6 1.8 50 25 0 25 50 75 100 125 150 175 0 2 4 6 8 10 0 7 14 21 28 35 0 0.005 0.010 0.015 0.020 0.025 0 8 16 24 32 40 v ds drain-to-source voltage (v) c rss c oss c iss v ds = 15 v i d = 11.7 a i d drain current (a) v gs = 10 v i d = 11.7 a v gs = 10 v gate charge on-resistance vs. drain current gate-to-source voltage (v) q g total gate charge (nc) c capacitance (pf) v gs capacitance on-resistance vs. junction temperature t j junction temperature ( c) (normalized) on-resistance ( r ds(on) ) 0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.005 0.010 0.015 0.020 0.025 0.030 0246810 t j = 25 c i d = 11.7 a 30 10 1 source-drain diode forward voltage on-resistance vs. gate-to-source voltage on-resistance ( r ds(on) ) v sd source-to-drain voltage (v) v gs gate-to-source voltage (v) source current (a) i s v gs = 4.5 v t j = 150 c
SI4730EY vishay siliconix new product www.vishay.com faxback 408-970-5600 4 document number: 71177 s-00823erev. a, 01-may-00
0 30 50 10 20 power (w) single pulse power time (sec) 40 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.2 0.4 50 25 0 25 50 75 100 125 150 175 i d = 250 a threshold voltage variance (v) v gs(th) t j temperature ( c) 1 100 600 10 10 1 10 2
10 3 10 2 1 10 600 10 1 10 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 77 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 10 3 10 2 110 10 1 10 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance
SI4730EY vishay siliconix new product document number: 71177 s-00823erev. a, 01-may-00 www.vishay.com faxback 408-970-5600 5
0 2 4 6 8 10 0 0.02 0.04 0.06 0.08 0.10 on-resistance vs. sense current i sense (a) on-resistance ( r ds(on) ) 0 200 400 600 800 1000 0246810121416 current ratio (i (main)/is ) vs. gate-source voltage (figure 1) ratio 0 2 4 6 8 10 0246810 on-resistance vs. gate-source voltage on-resistance ( r ds(on) ) v gs = 10 v v gs = 4.5 v v gs gate-to-source voltage (v) v gs gate-to-source voltage (v) i d = 10 ma r s = 6.6 r s = 4.7 r s = 2.2 r s = 1.1 g v g sense s kelvin r s figure 1

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