dfnwb 3 2 -08l-b jiangsu changjiang ele c tron ics technology co., ltd dfnwb3 2-08l-b power management mosfet s-schottky CJ5853DCB p- channel mosfet and schottky barrier diode feature z independent pinout to each device to z ultra low v f z featuring a mosfet and a schottky application z li-lon battery charging z high side dc-dc conversion circuits z high side drive for small brushless dc motors z power management in portable battery powered products maximum ratings (t a =25 unless other w ise noted) *rep etitive ra ting pluse width limited by junction temperature. symbol para mete r value unit p-mosfet v ds drain-s ourc e voltage -20 v v gs gate-source v o lt ag e 8 v i d conti nuo us drain current -2.7 a i dm * pulse dr ain c u rrent -10 a sc hottk y ba rrie r diode v rrm peak re petitiv e revers e v o lt age 20 v v r dc blocki ng v oltage 20 v i o a v erage rectified forward current 0.5 a po w e r dissip a tio n , temperature and thermal resistance p d po w er dissipation 1.1 w r ja t hermal resist ance from jun c tion to ambie nt 114 / w t j junctio n temperature 150 t st g s t orage temperature -55~+150 t l lea d temperature for soldering purposes(1/8?? from case for 10 s) 260 www.cj-elec.com 1 a,may,2015 equivalent circuit marking v (br ) dss /vr r ds(o n) max i d /i o -20v 110 m@-4.5v -2.7a ? 160 m @-2.5v 240 m@-1.8v? 20v / 0.5 a ? ease circuit design barrier diod e
parameter symbol test conditions min typ max unit p-mosfet sta t ic parameters drain-sourc e breakdown voltage v (br)dss v gs =0v, i d =- 2 50a -20 v ze ro gate volt age drain current i dss v ds =-16v,v gs = 0 v -1 a gate-body l eak age current i gss v gs =8v, v ds = 0 v 100 na gate threshold voltage v gs(th) v ds =v gs , i d =- 250 a -0.45 v drain-sourc e on-resistance(note1) r ds( on) v gs =-4.5v, i d =- 2.7a 110 m ? v gs =-2.5v, i d =- 2.2a 160 m ? v gs =-1.8v, i d =-1a 240 m ? fo r ward transconductance (note1) g fs v ds =- 10v,i d =- 2.7a 7 s diode for ward voltage(note1) v sd i s =-0.9a, v gs = 0v -1.2 v dyna m ic parameters (note 2) input capa citan ce c iss v ds =-10v,v gs =0v,f =1 mhz 300 pf output capacitance c oss 150 pf reverse transfer capac itanc e c rss 50 pf switching par a meters (note 2) tu rn-on dela y time t d(on) v gs =-4.5v,v dd =- 10v, r l =10 ?,r g =6 ?, i d =-1a 25 ns tu rn-on rise time t r 45 ns tu rn-off delay time t d(o f f) 45 ns tu rn-off fall time t f 40 ns to tal gate charge q g v ds =-10v,v gs =- 4.5v, i d =- 2.7a 6.5 nc gate-source charg e q gs 1.4 nc gate-drain charge q gd 0.65 nc schottky ba r rier diode fo r ward voltage v f i f =0.5 a 0.48 v reverse current i r v r =20v 100 a junction cap acitance c j v r =10v ,f= 1mhz 41 pf note: 1.pulse test: pulse w i dth =300 s, duty cycle 2% 2.these parameters have no way to verify. www.cj-elec.com 2 a,may,2015 mosfet electrical characteristics a t =25 unless otherwise specified
-0 .0 -0 .4 -0.8 -1.2 -1.6 -0.1 -1 -3 -0 -1 -2 -3 -4 -5 -0 -4 -8 -1 2 -16 -20 -0 .5 -1 .0 -1.5 -2.0 -2.5 -3.0 30 60 90 120 150 180 -0 -1 -2 -3 -4 -5 0 100 200 300 -0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -0 -2 -4 -6 -8 -10 -12 -14 -16 -18 25 50 75 100 125 -0 .2 -0.4 -0.6 -0.8 -1.0 puls ed t a =100 v sd i s ? ? t a =25 source current i s (a) source to drain voltage v sd (v) v gs =-3v v gs =-2v v gs =-4v,- 5v,-6v v gs =-1.5v o u tput characteristics drain current i d (a) drain to source voltage v ds (v) v gs =- 1.8v t a =25 pulsed v gs =- 2.5v v gs =- 4.5v t a =25 puls ed o n -resistance r ds ( on) (m ? ) drain current i d (a) i d ?? r ds(o n) pulsed t a =100 t a =25 o n -resistance r ds ( on) (m ? ) gate to source voltage v gs (v) v gs ?? r ds(o n) i d =- 2.6a v ds =-3v pulsed drain current i d (a) gate to source voltage v gs (v) t r ansfer characteristics t a =100 t a =25 i d =- 250ua t hr eshold voltage t hresho ld voltage v th (v) junction tem perature t j ( ) 7 \ s l f d o & k d u d f w h u l v w l f v p-channel characteristics www.cj-elec.com 3 a,may,2015
0.0 0.2 0.4 0 .6 0.8 1 10 100 1000 0 5 10 15 20 25 30 1 10 100 1000 0 5 10 15 20 25 30 0 30 60 90 120 t a = 1 0 0 t a = 2 5 forward current i f (ma) forw ard voltage v f (v) t a =100 t a =25 reverse current i r (ua) reverse voltag e v r (v) re v erse characteristics foward characteristics t a =25 f=1mhz ca p acitance characteristics reverse volt ag e v r (v) capacitance bet ween t erminals c t (pf) www.cj-elec.com 4 a,may,2015 7 \ s l f d o & k d u d f w h u l v w l f v schottky characteristics
www.cj-elec.com 5 a,may,2015 dfnwb3x2-8l-b package outline dimensions dfnwb3x2-8l-b 1 1 1 1
dfnwb3x2-8l tape and reel www.cj-elec.com 6 a,may,2015
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