t j =-40cto+125 c ' c 50 0 volt s 60 0 70 0 80 0 90 0 ioo o iio o 1 20 0 1 30 0 transien t pea k revers e voltage , v rsm ( d tj = +125 c 60 0 volt s 70 0 80 0 90 0 ioo o i 1 5 0 i25 0 i40 0 i 50 0 (1 ) hal f sin e wav e waveform , 10m s maximu m duration . averag e forwar d current , on-stat e depend s o n conductio n angl e (se e chart s 1 an d 3 ) pea k one-cycl e surg e on-stat e current , i ts m 800 0 ampere s maximu m rat e o f ris e o f anod e curren t switchin g fro m looo v 80 0 a/ a se c jede c test fo r repetitiv e di/dt-se e fig , 1 1 f t (fo r fusing ) (fo r time s = 1. 5 milliseconds ) se e fig . 9 100,00 0 ampere 2 second s f t (fo r fusing ) (a t 8. 3 milliseconds ) 265,00 0 ampere'second s pea k gat e powe r dissipation , p ? 20 0 watt s ?40^se c puls e averagegat e powe r dissipation , p ( ; (av | 5 watt s pea k revers e gat e voltage , v gr m 5 volt s storag e an d operatin g temperature , t sto &t j 40 c t o +125 c mountin g forc e require d 200 0 ibs , 10 % 910kg . 10 % qualit y semi-conductor s downloaded from: http:///
c39 0 characteristic s tes t pea k revers e an d forwar d blockin g curren t pea k reversean d off - stat e blockin g curren t effectiv e therma l resistanc e (dc ) critica l exponentia l rat e o f ris e o f for - war d blockin g voltag e (highe r value s ma y caus e devic e switching ) holdin g curren t latchin g curren t dela y tim e gat e trigge r curren t se e fig . 1 1 fo r recommende d gat e driv e conditions . gat e trigge r voltag e pea k on-vollag e circuite d cpmmutate d turn-orttim e symbo l 1 or m an d ' rr m i dr m an d i rr m r?j. c dv/d t i h i l t < ig t vc t vf m t, * win . _ 20 0 * * _ _ ,3 5 typ . 1 0 2 0 _ _ 10 0 .2 5 . 7 1 5 _ _ 12 5 max . 2 0 4 5 .05 9 .11 8 50 0 15 0 30 0 12 5 5 2. 4 unit s rn a m a c/wat t v//xse c mad c ad c f t se c mad c vd c volt s /use c tes t condition s t, = + 25c , v = v drm =v rk m tj=+125c , v = v dr m = v rr m junctio n t o cas e doubl e sid e coolin g (d.c. ) junctio n t o cas e singl e sid e coolin g (d.c. ) tj=+l25 q c , v, )k m = rated , gat e open . t c ~ + 25c , anod e supply = 2 4 vdc . initia l forwar d curren t = 2. 0 amps . t c = + 25c , anod e voltag e =2 4 vdc , loa d resistanc e 1 2 ohm s max . t c = + 25c , i t -=50ad c gat e supply : 20v , 20ft , 500ma , 0 . 1 /xse c max , ris e time . t c =+25c , v d =6vdc , r l = 3 ohm s t c =-40c , v d =6vdc , r l = 3 ohm s t c = + i20c , v d = 6 vdc , r,. = 3 ohm s t c = -40 c t o + 125c , v d = 6 vdc , r l = 3 ohm s t c = +i25c , v d = rated , r l = 100 0 ohm s t c = + 25c , i t =300 0 a peak . dut y cycle s 0.01 % (1 ) t< r =-h25c , (2 ) l r - 500a , (3 ) v =5 0 volt s min. , (4 ) v dr m (reapplied) , (5 ) ral e o f ris e o f reapplie d forwar d blockin g voltag e =2 0 v / jise c (linear) . [6 ) commutalio n di/d l = 2 5 amps/ m sec . [7 ) repelilio n rai e = 1 pps . ^8 ) gat e bia s durin g turn-of f interva l ? 0 volts . 10 0 ohms . q note : t c cas e temperatur e (measure d o n heatsin k 1/ 8 inc h fro m bas e o f scr. ) ualit y semi-conductor s downloaded from: http:///
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