zxms6004ffq document number: ds37132 rev. 4 - 2 1 of 9 www.diodes.com january 2016 ? diodes incorporated zxms6004ffq dmn2027 uss 60v n - channel self protected enhancement mode i ntelli fet mosfet product summary ? continuo u s drain source voltage: 60v ? on - state resistance: 500m? ? nominal load current (v in = 5v): 1.3a ? clamping energy: 90mj description the zxms6004ff q is a self - protected low side intellifet ? mosfet with logic level input. it integrates over temperature, over current, over voltage (active clamp) and esd protected logic level functionality. the zxms6004ff q is ideal as a general purpose switch driven from 3.3v or 5v microcontrollers in harsh environments where standard mosfets are not rugged enough. applications ? especially s uited for l oads with a high in - rush current such as lamps and motors ? all types of resistive , inductive and capacitive loads in switching applications ? c compatible power switch for 12v and 24v dc applications ? automotive rated ? replaces electromechanical relays and discrete circuits ? linear mode c apability C the current - limiting protectio n circuitry is designed to de - activate at low v ds to minimize on state power dissipation. the maximum dc operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. this does not compromise the products ability to self - protect at low v ds . features and benefits ? compact h igh p ower d issipation p ackage ? low i nput c urrent ? logic level input (3.3v and 5v) ? short c ircuit p rotection with a uto r estart ? over v oltage p rotection ( active clamp ) ? thermal s hutdown with a uto r estart ? over c urrent p rotection ? input protection (esd) ? high c ontinuous c urrent r ating ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability ? ppap capable (note 4) mechanical data ? case: s ot 23 f ? case material: molded plastic, green molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: matte tin finish ? weight: 0. 0 12 grams ( a pproximate ) ordering information (note 5 ) product marking reel s ize (inches) tape w idth (mm) quantity per r eel zxms6004ff q ta 1k6 7 12 3 ,000 note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. automotive products are aec - q10x qualified and are ppap capable. refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. for packagin g details, go to our website at http://www.diodes.com/products/packages.html . top view sot23f top view pin out intellifet is a trademark of diodes incorporated s in d
zxms6004ffq document number: ds37132 rev. 4 - 2 2 of 9 www.diodes.com january 2016 ? diodes incorporated zxms6004ffq dmn2027 uss marking information functional block diagram y : year : 0~9 w: week : a - z : 1~26 a~z : 27~52 z : re presents 52 & 53 w eek 1k6 = product t ype marking code 1k6
zxms6004ffq document number: ds37132 rev. 4 - 2 3 of 9 www.diodes.com january 2016 ? diodes incorporated zxms6004ffq dmn2027 uss maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units continuous drain - source voltage v ds 60 v drain - source voltage for s hort c ircuit p rotection v ds(sc) 36 v continuous input voltage v in - 0.5 ... +6 v continuous input current @ - 0.2v in in < - 0.2v or v in > 6v i in no limit i in 2 in = 3.3v i dm 2 a pulsed drain current @v in = 5v i dm 2.5 a continuous source current (body diode) i s 1 a pulsed source current (body diode) i sm 5 a unclamped s ingle p ulse i nductive e nergy, t j = +25c , i d = 0.5a, v dd = 24v e as 90 mj electrostatic discharge (human body model) v esd 4 , 000 v charged device model v cdm 1 , 000 v thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value units power dissipation @ t a = +25c ( note 6 ) linear derating factor p d 0.83 6.66 w mw/ c power dissipation @ t a = +25c ( note 7 ) linear derating factor p d 1.5 12.0 w mw/ c thermal resistance, junction to ambient ( note 6 ) r ja 150 ? ja 83 c/w thermal resistance, junction to case ( note 8 ) r jc 44 c/w operating temperature range t j - 40 to +150 c storage temperature range t stg - 55 to +150 c n otes : 6 . for a device surface mounted on 15mm x 15mm single sided , 1oz weight copper on 1.6mm fr4 board, in still air conditions. 7 . for a device surface mounted on 50mm x 50mm single sided , 2oz weight copper on 1.6mm fr4 board, in still air conditions. 8 . thermal resistance from junction and the mounting surfaces of the drain pins. recommended operating conditions the zxms6004ff is optimized for use with c operating from 3.3v and 5v supplies. characteristic symbol min max unit input v oltage r ange v in 0 5.5 v ambient t emperature r ange t a - 40 + 125 c high l evel i nput v oltage for mosfet to be o n v ih 3 5.5 v low l evel i nput v oltage for mosfet to be o ff v il 0 0.7 v peripheral s upply v oltage ( voltage to which load is referred ) v p 0 3 6 v
zxms6004ffq document number: ds37132 rev. 4 - 2 4 of 9 www.diodes.com january 2016 ? diodes incorporated zxms6004ffq dmn2027 uss typical thermal characteristics 1 10 10m 100m 1 limited by over-current protection single pulse t amb =25c 15x15mm fr4 1oz cu limited by r ds(on) 1ms 10ms 100ms 1s dc safe operating area i d drain current (a) v ds drain-source voltage (v) limit of s/c protection 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 15x15mm fr4 1oz cu derating curve temperature (c) max power dissipation (w) 50x50mm fr4 2oz cu 100 1m 10m 100m 1 10 100 1k 0 20 40 60 80 100 120 140 160 t amb =25c 15x15mm fr4 1oz cu transient thermal impedance d=0.5 d=0.2 d=0.1 single pulse d=0.05 thermal resistance (c/w) pulse width (s) 100 1m 10m 100m 1 10 100 1k 1 10 100 single pulse t amb =25c 15x15mm fr4 1oz cu pulse power dissipation pulse width (s) maximum power (w)
zxms6004ffq document number: ds37132 rev. 4 - 2 5 of 9 www.diodes.com january 2016 ? diodes incorporated zxms6004ffq dmn2027 uss electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition static characteristics drain - source clamp voltage v ds(az) 60 65 70 v i d = 10ma off - s tate drain current i dss ds = 12v, v in = 0v ds = 36v, v in = 0v input threshold voltage v in(th) 0.7 1 1.5 v v ds = v gs , i d = 1ma input current i in in = +3v in = +5v input current w hile o ver t emperature a ctive in = +5v static drain - source on - state resistance r ds(on) ? in = +3v, i d = 0.5 a in = +5v, i d = 0.5 a continuous drain current (note 6 ) i d 0.9 in = 3v; t a = +25c 1.0 in = 5v; t a = +25c co ntinuous drain current (note 7 ) 1.2 in = 3v; t a = +25c 1.3 in = 5v; t a = +25c current limit ( note 9 ) i d(lim) 0.7 1.7 in = +3v 1 2.2 in = +5v dynamic characteristics turn - on delay time t d(on) dd = 12v, i d = 0.5 a, v gs = 5v rise t ime t r d(off) f over t emperature protection ther mal overload trip temperature (note 10 ) t jt + 150 + 175 f notes: 9 . the drain current is restricted only when the device is in saturation (see graph typical output characteristic ). this allows the device to be used in the fully on - state without interference from the current limit. the device is fully protected at all drain currents, as the low power dissipatio n generated outsid e saturation makes current limit unnecessary. 10 . over t emperature protection is designed to prevent device destruction under fault conditions. fault conditions are considered as outside nor mal operating range, so this part is not designed to withstand over - temperature for extended periods .
zxms6004ffq document number: ds37132 rev. 4 - 2 6 of 9 www.diodes.com january 2016 ? diodes incorporated zxms6004ffq dmn2027 uss typical performance characteristics 0 1 2 3 4 5 6 7 8 9 10 11 12 0 1 2 3 -75 -50 -25 0 25 50 75 100 125 150 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 1 2 3 4 5 0 20 40 60 80 100 120 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 10 typical output characteristic t a = 25c v in 5.5v 5.0v 4.5v 4.0v 3.5v 3.0v 2.5v 2.0v i d drain current (a) v ds drain-source voltage (v) threshold voltage vs temperature v in = v ds i d = 1ma v th threshold voltage (v) t j junction temperature (c) t j = 150c on-resistance vs input voltage t j = 25c r ds(on) on-resistance ( ? ) v in input voltage (v) i d = 0.5a reverse diode characteristic v in = 3v v in = 5v on-resistance vs temperature t j junction temperature (c) r ds(on) on-resistance ( ? ) input current vs input voltage i in input current ( ? a) v in input voltage (v) v sd source-drain voltage (v) i s source curent (a) t j =25c t j =150c
zxms6004ffq document number: ds37132 rev. 4 - 2 7 of 9 www.diodes.com january 2016 ? diodes incorporated zxms6004ffq dmn2027 uss typical performance characteristics ( c ontinued) -50 0 50 100 150 200 250 300 0 2 4 6 8 10 12 -50 0 50 100 150 200 250 300 0 2 4 6 8 10 12 0 5 10 15 20 0.0 0.5 1.0 1.5 2.0 2.5 switching speed v in drain-source voltage (v) time ( ? s) v ds i d =500ma v ds v in switching speed drain-source voltage (v) time ( ? s) i d =500ma typical short circuit protection v in = 5v v ds = 15v r d = 0 ? i d drain current (a) time (ms)
zxms6004ffq document number: ds37132 rev. 4 - 2 8 of 9 www.diodes.com january 2016 ? diodes incorporated zxms6004ffq dmn2027 uss package outline dimensions please see ap0200 1 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. sot23f dim min max typ a 0.80 1.00 0.90 b 0.35 0.50 0.44 c 0.10 0.20 0.16 d 2.80 3.00 2.90 e 0.95 ref e1 0.190 ref e 2.30 2.50 2.40 e1 1.50 1.70 1.65 k 1.20 - - l 0.30 0.65 0.50 l1 0.30 0.50 0.40 r 0.05 0.15 - all dimensions in mm suggested pad layout please see ap0200 1 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. dimensions value (in mm) c 0.95 x 0.80 y 1.110 y1 3.000 e1 d b e l1 a r b e1 e c k l x y y1 c
zxms6004ffq document number: ds37132 rev. 4 - 2 9 of 9 www.diodes.com january 2016 ? diodes incorporated zxms6004ffq dmn2027 uss important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any lia bility arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or pro ducts described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorpora ted does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales chann el. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall i ndemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized ap plication. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. th is document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiven ess. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related re quirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 6 , diodes incorpor ated www.diodes.com
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