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s mhop microelectronics c orp. a STM8362 symbol v ds v gs i dm e as w a p d c 2 -55 to 150 i d units parameter 40 6.6 24 v v 20 t c =25 c gate-source voltage drain-source voltage thermal characteristics mj product summary (n-channel) v dss i d r ds(on) (m ) max 40v 6.6a 45 @ vgs=4.5v 29 @ vgs=10v dual enhancement mode field effect transistor (n and p channel) absolute maximum ratings ( t c =25 c unless otherwise noted ) n-channel drain current-continuous a -pulsed b a sigle pulse avalanche energy d maximum power dissipation a operating junction and storage temperature range t j , t stg www.samhop.com.tw nov,12,2009 1 details are subject to change without notice. 62.5 thermal resistance, junction-to-ambient r ja a t c =25 c product summary (p-channel) v dss i d r ds(on) (m ) max -40v -5.8a 60 @ vgs=-4.5v 38 @ vgs=-10v -40 -5.8 -21 20 p-channel t c =70 c a 5.3 -4.6 1.28 w t c =70 c c/w 30 36 ver 1.1 so-8 1 4 3 2 1 d 2 d 2 d 1 d 1 g 2 s 2 g 1 s 1 5 6 7 8 green product
4 symbol min typ max units bv dss 40 v 1 i gss 100 na v gs(th) 1.4 v 23 g fs 18 s v sd c iss 755 pf c oss 81 pf c rss 67 pf q g 12 nc 14 nc q gs 18 nc q gd 20 t d(on) 15 ns t r 1.9 ns t d(off) 4.1 ns t f ns gate-drain charge v ds =20v,v gs =0v switching characteristics gate-source charge v dd =20v i d =1a v gs =10v r gen =6ohm total gate charge rise time turn-off delay time v ds =20v,i d =6.6a,v gs =10v fall time turn-on delay time m ohm v gs =10v , i d =6.6a v ds =5v,i d =6.6a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs ,i d =250ua v ds =32v , v gs =0v v gs =20v,v ds =0v zero gate voltage drain current gate-body leakage current n-channel electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v,i d =250ua reverse transfer capacitance on characteristics 3 v gs =4.5v , i d =5.3a 29 33 45 m ohm c f=1.0mhz c v ds =20v,i d =6.6a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =2.0a 0.82 1.3 v STM8362 www.samhop.com.tw nov,12,2009 2 nc v ds =20v,i d =6.6a,v gs =4.5v 7.4 1.8 b i s maximum continuous drain-source diode forward current a 2.0 ver 1.1
symbol min typ max units bv dss -40 v -1 i gss 100 na v gs(th) -1.4 v 30 g fs 18 s v sd c iss 1000 pf c oss 123 pf c rss 107 pf q g 18 nc 22 nc q gs 65 nc q gd 20 t d(on) 22 ns t r 2.1 ns t d(off) 6 ns t f ns gate-drain charge v ds =-20v,v gs =0v switching characteristics gate-source charge v dd =-20v i d =-1a v gs =-10v r gen =6ohm total gate charge rise time turn-off delay time v ds =-20v,i d =-5.5a,v gs =-10v fall time turn-on delay time m ohm v gs =-10v , i d =-5.8a v ds =-5v , i d =-5.8a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs ,i d =-250ua v ds =-32v , v gs =0v v gs =20v,v ds =0v zero gate voltage drain current gate-body leakage current p-channel electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v,i d =-250ua reverse transfer capacitance on characteristics -3 v gs =-4.5v , i d =-4.6a 38 45 60 m ohm c f=1.0mhz c v ds =-20v,i d =-5.5a, v gs =-10v drain-source diode characteristics and maximum ratings v gs =0v,i s =-2.0a -0.81 -1.3 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=0.5mh,v dd = 20v,v gs =10v.(see figure13) _ _ STM8362 www.samhop.com.tw nov,12,2009 3 nc v ds =-20v,i d =-5.5a,v gs =-4.5v 10.7 _ -2.0 b i s maximum continuous drain-source diode forward current a -2.0 ver 1.1
STM8362 www.samhop.com.tw nov,12,2009 4 i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c) figure 5. gate threshold variation with temperature tj, junction temperature( c) figure 6. breakdown voltage variation with temperature n-channel 30 24 18 12 6 0 0 0.5 1 1.5 2 2.5 3 v gs =3v v gs =3.5v v gs =4v v gs =4.5v v gs =10v 15 9 6 3 0 00.8 1.6 2.4 3.2 4.0 4.8 12 -55 c 60 48 36 24 12 0 6121824 30 1 v gs =10v v gs =4.5v 72 tj( c) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 25 50 75 100 125 150 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 0.95 0.90 0.85 i d =250ua 1.00 1.05 1.10 1.15 ver 1.1 v gs =4.5v i d =5.3a c 25 tj=1 25 c v gs =10v i d =6.6a v ds =v gs i d =250ua
STM8362 www.samhop.com.tw nov,12,2009 5 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 56 42 0 2468 10 0 i d =6.6a 28 14 84 70 125 c 25 c 75 c 20.0 10.0 1.0 00.30.60.9 1.2 1.5 5.0 1200 1000 800 600 400 200 0 ciss coss crss 10 8 6 4 2 0 024 6 810121416 v ds =20v i d =6.6a ver 1.1 0 5 10 15 20 25 30 125 c 25 c 75 c 1 10 100 60 100 10 1 300 6 vds =20v,id=1a vgs =10v tr td(off) tf td(on) 0.1 1 10 40 10 1 0.1 v gs =10v single pulse t a =25 c r ds (on) limit 1ms 1 0 0us 10ms 1 0 u s dc 10ms
STM8362 www.samhop.com.tw nov,12,2009 6 t p v (br )dss i as r g i as 0.01 t p d.u.t l v ds + - v dd dr ive r a 15v 20v f igure 13a. f igure 13b. u nc l am p ed s in d u ct i ve t e t ci r c u i t o fr m w ave s u nc l am p e d in d u ct i ve 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 1 0 100 1000 square wave pulse duration(sec) normalized thermal transient impedance curve normalized transient thermal resistance p dm t 1 t 2 1. r ? ja (t)=r (t) * r ? ja 2. r ? ja =s ee datasheet 3. t jm- t a =p dm *r ? ja (t) 4. duty cycle, d=t 1 /t 2 single pulse 0.5 0.2 0.1 0.05 0.02 0.01 ver 1.1
STM8362 www.samhop.com.tw nov,12,2009 7 -i d , drain current(a) -v ds , drain-to-source voltage(v) figure 1. output characteristics -v gs , gate-to-source voltage(v) figure 2. transfer characteristics -i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized -i d , drain current(a) tj, junction temperature( c) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c) figure 5. gate threshold variation with temperature tj, junction temperature( c) figure 6. breakdown voltage variation with temperature p-channel tj( c) ver 1.1 25 20 15 10 5 0 0.5 1 1.5 2 2.5 3 v gs =-3v v gs =-4v v gs =-4.5v v gs =-5v v gs =-10v 0 -55 c 15 9 6 3 0 0 0.8 1.6 2.4 3.2 4.0 4.8 25 c tj=125 c 12 90 75 60 45 30 15 0 5101520 25 1 v gs =-10v v gs =-4.5v 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 25 50 75 150 100 125 v gs =-4.5v i d =-4.6a v gs =-10v i d =-5.8a 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 v ds =v gs i d =-250ua -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 i d =-250ua v gs =-3.5v
STM8362 www.samhop.com.tw nov,12,2009 8 r ds(on) (m ) -v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage -is, source-drain current(a) -v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) -v ds , drain-to-source voltage(v) figure 9. capacitance -v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics -i d , drain current(a) -v ds , drain-source voltage(v) figure 12. maximum safe operating area ver 1.1 120 100 80 60 40 20 0 2468 10 0 25 c i d =-5.8a 1200 1000 800 600 400 200 0 ciss coss crss 10 8 6 4 2 0 036 9 12 15 18 21 24 v ds =-20v i d =-5.8a 0.1 1 10 40 10 1 0.1 1ms 10 0us 1 10 100 100 10 1 1000 vds=-20v,id=-1a vgs=-10v 20.0 10.0 1.0 0.4 0.6 0.8 1.0 1.2 1.4 25 c 75 c 5.0 125 c 6 td(on) tf 125 c 75 c 0510 15 20 25 30 1 0 us v gs =-10v single pulse t a =25 c dc 60 tr td(off ) r ds (on) l im it 10ms
t p v (br )dss i as r g i as 0.01 t p d.u.t l v ds + - v dd dr ive r a 15v 20v f igure 13a. figure 13b. u nc l am p ed s in d u ct i ve t e t ci r c u i t o fr m w ave s u nc l am p e d in d u ct i ve STM8362 www.samhop.com.tw nov,12,2009 9 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 1 0 100 1000 square wave pulse duration(sec) normalized thermal transient impedance curve single pulse p dm t 1 t 2 1. r thja (t)=r (t) * r ja 2. r ja =see datasheet 3. t jm- t a =p dm *r ja (t) 4. duty cycle, d=t 1 /t 2 th th th 0.01 0.02 0.5 0.2 0.1 0.05 normalized transient thermal resistance ver 1.1
STM8362 www.samhop.com.tw nov,12,2009 10 package outline dimensions so-8 symbols min min 0.053 0.004 0.189 0.150 0.228 0.016 0 1.35 0.10 4.80 3.81 5.79 0.41 0 max max 0.069 0.010 0.196 0.157 0.244 0.050 8 1.75 0.25 4.98 3.99 6.20 1.27 8 millimeters inches a a1 d e h l 1 eb h e l a1 a c d 0.05 typ. 0.016 typ. 0.008 typ. 0.015x45 ver 1.1 notes 6j so-8 package weight 6j 0.083g
STM8362 www.samhop.com.tw nov,12,2009 11 so-8 tape and reel data so-8 carrier tape so-8 reel unit: @ package sop 8n 150 ? a0 b0 k0 d0 d1 e e1 e2 p0 p1 p2 t 6.50 5.25 2.10 ? 1.5 (min) ? 1.55 12.0 +0.3 - 0.1 1.75 5.5 2 0.10 8.0 2 0.10 4.0 2 0.10 2.0 2 0.10 0.30 2 0.013 unit: @ tape size 12 @ reel size ? 330 m n w w1 h k s g r v 330 2 1 62 2 1.5 12.4 + 0.2 16.8 - 0.4 ? 12.75 + 0.15 2.0 2 0.15 a a e e1 e2 p0 d0 a0 b0 d1 p1 p2 feeding direction t k0 section a-a 2 0.15 2 0.10 2 0.10 2 0.10 2 0.10 terminal number 1 w1 n w m g v r h k s ver 1.1

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