050-4931 d 2-2013 maximum ratings all ratings: t c = 25c unless otherwise speciied. static electrical characteristics (each device) symbol bv dss v ds (on) i dss i gss g fs g fs1 / g fs2 v gs (th) dv gs (th) characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 250 a) on state drain voltage 1 (i d (on) = 5a, v gs = 10v) zero gate voltage drain current (v ds = v dss , v gs = 0v) zero gate voltage drain current (v ds = 50v, v gs = 0, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) forward transconductance (v ds = 15v, i d = 5a) forward transconductance match ratio (v ds = 15v, i d = 5a) gate threshold voltage (v ds = v gs , i d = 200ma) gate threshold voltage match (v ds = v gs , i d = 200ma) min typ max 500 2.9 4 100 500 100 3 3.6 0.9 1.1 2 3.3 4 0.2 unit volts a na mhos volts symbol v dss v dgo i d v gs p d t j ,t stg t l parameter drain-source voltage drain-gate voltage continuous drain current @ t c = 25c (each device) gate-source voltage total device dissipation @ t c = 25c operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. ARF476FL 500 500 10 30 910 -55 to 175 300 unit volts amps volts watts c rf power mosfet n - channel push - pull pair 165v 450w 150mhz the ARF476FL is a matched pair of rf power transistors in a common source coniguration. it is design ed for high voltage push-pull or parallel operation in narrow band ism and mri power ampliiers up to 150 mhz. ? speciied 150 volt, 128 mhz characteristics: ? output power = 900 watts peak ? gain = 15db (class ab) ? eficiency = 50% min ? high performance push-pull rf package. ? high voltage breakdown and large soa for superior ruggedness. ? low thermal resistance. ? rohs compliant * ARF476FL common source push-pull pair caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be follow ed. thermal characteristics symbol r jc r jhs characteristicjunction to case junction to sink (use high eficiency thermal grease and planar heat sink surface.) min typ max 0.15 0.165 0.30 0.33 unit c/w *pb free terminal finish. ARF476FL d d g g s s s s d d s s s s g g microsemi website - http://www.microsemi.com downloaded from: http:///
050-4931 d 2-2013 dynamic characteristics (per section) ARF476FL symbol c iss c oss c rss t d(on) t r t d(off) t f characteristicinput capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time test conditions v gs = 0v v ds = 50v f = 1mhz v gs = 15v v dd = 250v i d = i d[cont.] @ 25c r g = 1.6 w min typ max 780 830 125 130 7 9 5.1 10 4.1 8 12 18 4.0 7 unit pf ns functional characteristics (push-pull coniguration) symbol g ps test conditions f = 128 mhz idq = 15ma v dd = 150v p out = 900w pw = 3ms 10% duty cycle no degradation in output power characteristic common source ampliier power gain drain eficiency electrical ruggedness vswr 5:1 min typ max 14 16 50 55 unit db % 1 pulse test: pulse width < 380 s, duty cycle < 2%. microsemi reserves the right to change, without notice, the speciications and information contained herein. capacitance (pf) v ds , drain-to-source voltage (volts) figure 2, typical capacitance vs. drain-to-source voltage 30001000 500100 5010 1 .1 1 10 100 200 c iss c oss c rss per transistor section unless otherwise speciied. v ds , drain-to-source voltage (volts) figure 1, typical output characteristics 0 5 10 15 20 25 30 i d , drain current (amperes) 9v 7v 8v 12v 10v 11v 3025 20 15 10 50 3025 20 15 10 50 0 2 4 6 8 10 v gs , gate-to-source voltage (volts) figure 3, typical transfer characteristics i d , drain current (amperes) v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle t j = -55c t j = -55c t j = +125c t j = +25c t c , case temperature (c) figure 4, typical threshold voltage vs temperature 1.101.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 v gs(th) , threshold voltage (normalized) downloaded from: http:///
050-4931 d 2-2013 ARF476FL table 1 - typical series equivalent large signal input - output impedance freq. (mhz) z in (w) gate to gate z ol (w) drain - drain 3060 90 120150 5.2 -j10 1.37 -j5.2 .53 -j2.6.25 -j1.0 .25 +j0.2 41 -j2026 -j25 16 -j23 10 -j20 6.7 -j17 z in - gate -gate shunted with 25 w i dq = 15ma each side z ol - conjugate of optimum load for 600 watts peak output at v dd = 150v 25% duty cycle and pw = 5ms figure 5b, transient thermal impedance model single pulse 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 5a, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.180.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 0.5 0.1 0.3 0.7 0.05 d = 0.9 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : 0.0755 0.0893 0.0135f 0.161f dissipated power (watts) t j ( c) t c ( c) z ext are the external thermal impedances: case to sink, sink to ambient, etc. set to zero when modeling only the case to junction. z ext 0.1 1 10 100 200 1 10 100 800 i d , drain current (amperes) v ds , drain-to-source voltage (volts) figure 6, typical maximum safe operating area t c =+25c t j =+175c single pulse operation here limited by r ds (on) 1ms 100ms 100s dc line 10s 10ms downloaded from: http:///
050-4931 d 2-2013 ARF476FL 128mhz test amplifier po = 900w @150v 3ms pulse 10% duty cycle notes:the value of l1 must be adjusted as the supply voltage is changed to maintain resonance in the output circuit. at 128mhz its value changes from approximately 40nh at 100v to 30nh at 150v . with the 50 w drain-to-drain load, the duty cycle above 100v must be reduced to insure power dissipation is within the limits of the device. maximum pulse length should be 100ms or less. see transient thermal impedance, figure 5. peak output power vs. vdd and duty cycle 0 100 200 300 400 500 600 700 800 900 80 100 120 140 160 0 0.2 0.4 0.6 0.8 1 1.2 drain supply voltage vdd duty cycle p o watts max j1 vdd + + - l3 dut tl3 tl4 tl5 tl6 l2 l1 c1 c2 c3 c4 c5 c11 tl1 tl2 j2 t3 vg1 vg2 c6 c7 c8 c9 t2 t1 r1 r4 r2 r3 c1 25pf poly trimmer c2 750pf atc 700b c3-4 2200pf npo 500v chip c5-10 10nf 500v chip c1 1 1000uf 250v electroytic l1 30nh 1.5t #18 enam .375" dial2 680nh 12t #24 enam .312" dia l3 2t #20 on fair-rite 2643006302 bead, ~ 2uh r1-2 3.1 w : 3 parallel 22 w 1w 2512 smt r3-4 2.2k w 1/4w axial t1 1:1 balun 50 w coax on fair-rite 2843000102 core t2 4:1 25 w coax on 2843000102 fair-rite balun core t3 1:1 coax balun rg-303 on 2861006802 fair-rite core tl1-2 printed line l= 0.75" w=.23" tl3-6 printed line l= 0.65" w=.23" 0.23" wide stripline on fr-4 board is ~ 30 w z o c10 1.500 .300 .200 .005 .040 ARF476FL .175 .175 .150 .150 .100 .100 .100 .325 .325 +/ - .010 .570 1.250 .320 .125dia 4 pls .125r 4 pls .080 1.000 hazardous material warning the white ceramic portion of the device between leads and mounting surface is beryllium oxide, beo. beryllium oxide dust is toxic when inhaled. care must be taken during handling and mounting to avoid damage to this area. these devices must never be thrown away with general industrial or domestic waste. beo substrate weight: 1.3g. percentage of total module weight which is beo: 23%. thermal considerations and package mounting: the rated power dissipation is only available when the package mounting surface is at 25c and the junction temperature is 175c. the thermal resistance between junctions and case mounting surface is 0.16 c/w. when installed, an additional thermal impedance of 0.15c/w between the package base and the mounting surface is typical. insure that the mounting surface is smooth and flat. thermal joint compound must be used to reduce the effects of small surface irregularities. use the minimum amount necessary to coat the surface. the heatsink should incorporate a copper heat spreader to obtain best results. the package design clamps the ceramic base to the heatsink. a clamped joint maintains the required mounting pressure while allowing for thermal expansion of both the base and the heat sink. four 4-40 (m3) screws provide the required mounting force. t = 3-4 in-lb (0.34 - 0.45 n-m). downloaded from: http:///
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