us5 a ? us5 m symbol us5 a us5 b us5 d us5 g us5 j us5 k us5 m unit us5 a ? us5 m c a se: smb/do-214aa,smc/do-214ab, molded plastic surge overload rating to 100a peak characteristi c cla ssification rating 94v-o ultra-fast recovery time ideally suited for automatic assembly low power loss -65 to +150 c 50 75 ns 35 70 140 280 420 560 800 v 50 100 200 400 600 800 1000 v 1.0 1.3 1. 7 v features ! ! lo w forward voltage drop, high efficiency ! ! ! ! plastic case material has ul flammability mechanic al d ata ! ! te rminals: solder plated, solderable per mil-std-750, method 2026 ! polarity: cathode band or cathode notch ! marking: type number maximum r a tings and electrical characteristics @t a =25 c unless otherwise specified p eak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r rm s reverse voltage v r(rm s) av erage rectified output current @t l = 100 c i o 5.0 a non-repet i tive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 100 a forward vo ltage @i f = 5. 0a v fm pe a k reverse current @t a = 25 c a t rated dc blocking voltage @t a = 100 c i rm 10 500 a revers e rec overy time (note 1) t rr t y pical junction capacitance (note 2) c j 25 pf t y pical thermal resistance (note 3) r jl 30 c /w operat i ng and storage temperature range t j, t stg note: 1. measured with i f = 0. 5a , i r = 1 .0a, i rr = 0.25a. see figure 5. 2. measured at 1.0 mhz and applied reverse voltage of 4.0 v dc. 3. mounted on p.c. board with 8.0mm 2 l and area. 1 of 2 z ibo seno electronic engineering co., ltd. www.senocn.com smb smc dim min max min max a 3.30 3.94 5.59 6.22 b 4.06 4.57 6.60 7.11 c 1.96 2.21 2.75 3.18 d 0.15 0.31 0.15 0.31 e 5.00 5.59 7.75 8.13 g 0.10 0.20 0.10 0.20 h 0.76 1.52 0.76 1.52 j 2.00 2.62 2.00 2.62 all dimensions in mm a b c d g h e j ! ! lea d free: for rohs / lead free version weight: smb weight: 0.093 grams (approx.) smc weight: 0.20 grams (approx.) 5 .0a s urface mount ultrafast diode a l l d a t a s h e e t
2 of 2 z ibo seno electronic engineering co., ltd. www.senocn.com 0.01 0.1 1.0 10 0.6 1.0 1.4 1.8 t = 25 c j pulse width = 300 s 2% duty cycle m v , inst antaneous forward voltage (v) fig. 2 typical forward characteristics f i , inst antaneous forward current (a) f 10 100 200 1 10 100 i , peak forward surge current (a) fsm number of cycles at 60hz fig. 3 peak forward surge current 8.3ms single half sine-wave 50v dc approx 50 ni (non-inductive) w 10 ni w 1.0 ni w oscilloscope (note 1) pulse generator (note 2) device under t est t rr settimebasefor5/10ns/cm +0.5a 0a -0.25a -1.0a notes: 1. rise time = 7.0ns max. input impedance = 1.0m , 22pf. 2. rise time = 10ns max. input impedance = 50 . w w fig. 5 reverse recovery time characteristic and test circuit (+) (+) (-) (-) t , ambient temperature ( c) fig. 1 forward current derating curve a us5j-us5m us5g us5a-us5d 0.01 0.1 1.0 10 100 1000 0 20 40 60 80 100 120 140 i , inst antaneous reverse current (ma) r percent of ra ted peak reverse voltage (%) fig. 4 typical reverse characteristics t = 100 c j t = 25 c j us5 a ? us5 m us5 a ? us5 m 1 2 3 4 02 5 5 0 75 100 125 150 175 i , a verage fwd rectified current (a) (av) single phase half wave resistive or inductive load 5 a l l d a t a s h e e t
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