1/10 features applications typical application circuit ? ready-to-use functions - on/off - search light - dimming - acknowledge ? implemented gesture recognition - awareness - tap - time select - wipe - proximity ? detection range approx. 25 cm ? direct light control possible ? pwm-output (125 hz, 8 bit) ? pcb only application ? no mechanics ? reference schematics and reference layout available ? innovative motion-controlled light ? optical push buttons and controls ? wake-up function for saving energy ? pre-selection to simplify menu structures general description fast and reliable gesture recognition based on the prov - en robustness of halios?. our technology and long term hmi experience provides an easy to use state-of- the-art interface for your products. amazing usability included! the ic is ready to identify the necessary gestures used for basic controls (e. g. dimming). these gestures can be used to directly control the light. alternatively they can be to be connected to your mcu. ordering information product id temp range package e527.16 -40c to +85c qfn32l5 reference schematics and reference layout for easy implementation are available for free. do not develop gesture control, simply use it! vddio avdd e527.16 (lighting) application vddc led1a pwm on search ack aware ack_dis search_dis nrst led1b led1c led1d ca an 3.3v ledc vss avss 3.3v 2.5v elmos semiconductor ag data sheet qm-no.: 25ds0106e.01 halios? gesture switch e527.16 elmos semiconductor ag reserves the right to change the detail specifcations as may be required to permit improvements in the design of its products. production data - jul 29, 2013
2/10 functional diagram pin confguration top view note: not to scale, ep exposed die pad vddio avdd e527.16 vddc ack aware search_dis ack_dis nrst search on pwm an ca led1a led1b led1c vssled vssled led1d vssledc ledc vss avss demod. filter modulator halios ? signal controller 1 9 10 11 12 13 14 15 16 32 ep 31 30 29 28 27 26 25 on 2 aware 3 ack 4 search 5 ack_dis 6 search_dis 7 n.c. 8 led1a vssled led1b led1c vssled led1d vssledc ledc i.c. i.c. i.c. i.c. nrst n.c. avss an pwm 24 ca 23 avdd 22 n.c. 21 vddio 20 vss 19 vddc 18 n.c. 17 n.c. bottom side pin 1 elmos semiconductor ag data sheet qm-no.: 25ds0106e.01 production data - jul 29, 2013 elmos semiconductor ag reserves the right to change the detail specifcations as may be required to permit improvements in the design of its products. halios? gesture switch e527.16 e527.16
3/10 pin description pin name type 1) description 1 on d_o digital output, set if the device is in on state 2 aware d_o indicates the status awareness 3 ack d_o indicates the status acknowledge 4 search d_o indicates the status search light 5 ack_dis d_i disables acknowledge function on pwm output 6 search_dis d_i disables search light function on pwm output 7 n.c. not connected, leave open 8 pwm d_o pwm output 9 led1a a_o led driver output 10 vssled s ground led1a, led1b 11 led1b a_o led driver output 12 led1c a_o led driver output 13 vssled s ground led1c, led1d 14 led1d a_o led driver output 15 vssledc s ground ledc 16 ledc a_o led driver output 17 n.c. not connected 18 n.c. not connected 19 vddc s core supply 2.5v 20 vss s ground 21 vddio s io supply 3.3v 22 n.c. not connected 23 avdd s analog supply 2.5v 24 ca a_i cathode 25 an a_i anode 26 avss s analog ground 27 n.c. not connected 28 nrst d_i reset input, active low, has to be connected via a capacitor to gnd 29 i.c. internal connected, connect to vss 30 i.c. internal connected, leave open, do not connect 31 i.c. internal connected, leave open, do not connect 32 i.c. s internal connected, connect to avss - ep s exposed die pad 1) a= analog, d= digital, i/o = input/output, s= supply elmos semiconductor ag data sheet qm-no.: 25ds0106e.01 production data - jul 29, 2013 elmos semiconductor ag reserves the right to change the detail specifcations as may be required to permit improvements in the design of its products. halios? gesture switch e527.16
4/10 1 absolute maximum ratings stresses beyond these absolute maximum ratings listed below may cause permanent damage to the device. these are stress rat - ings only; operation of the device at these or any other conditions beyond those listed in the operational sections of this document is not implied. exposure to absolute maximum rated conditions for extended periods may affect device reliability. all voltages with respect to ground. currents fowing into terminals are positive, those drawn out of a terminal are negative. the parameters are guaranteed within the range of recommended operating conditions unless otherwise specifed. all voltages are referred to ground (0v) and currents are fowing into the circuit have positive values. the frst electrical potential connected to the ic must be gnd. (if not specifed specify timing sequence of electrical contacts.) all voltages are referred to v ss , and currents are positive when fowing into the node unless otherwise specifed. note: test point defned as tested pin to supply. 1) according to aec-q 100-002, human body model, 1.5k resistance, 100pf capacitance. 2) according to aec-q 100-011, charged device model, pulse rise time (10% to 90%) <400ps, 1 resistance. description condition symbol min max unit supply voltage: digital core, analog part referenced to v ss /a vss v ddc /a vdd -0.3 2.8 v io supply voltage/digital pins referenced to v ss v ddio -0.3 3.7 v input voltage analog pins referenced to a vss v ina -0.3 a vdd + 0.3 v input voltage digital pins ack_dis, search_dis, nrst referenced to v ss v ind -0.3 v ddio + 0.3 v ground offset v ss to a vss to v ssled ground off - set -0.3 +0.3 v junction temperature t j -40 +125 c storage temperature t stg -50 +150 c 2 recommended operating conditions description condition symbol min max unit esd hbm protection hbm 1) 2 - kv esd cdm at edge pins cdm 2) v pins edge 0.75 - kv esd cdm at all other pins cdm 2) v pins-other 0.5 - kv description condition symbol min typ max unit supply voltage: analog part, digital core referenced to v ss / a vss v ddc / a vdd 2.25 2.5 2.75 v io supply voltage/digital pins referenced to v ss v ddio 3.0 3.3 3.6 v filter capacitor analog part connected to a vdd c avdd 10 f filter capacitor digital part connected to v ddc c vddc 100 nf ambient operating temperature range t opt -40 +25 +85 c 3 esd protection elmos semiconductor ag data sheet qm-no.: 25ds0106e.01 production data - jul 29, 2013 elmos semiconductor ag reserves the right to change the detail specifcations as may be required to permit improvements in the design of its products. halios? gesture switch e527.16
5/10 1) will not be tested in production. (v ddc /a vdd = +2.25v to +2.75v, t op = -40c to +85c, unless otherwise noted. typical values are at v ddc /a vdd = +2.5v and t op = +25c. positive currents fow into the device pins.) description condition symbol min typ max unit power supply current consumption in applica - tion mode on mode 1) i on 4 ma pwm output output voltage low v ddio = 3.3v io vol 0.5 v output voltage high v ddio = 3.3v io voh 2.4 v low level output current v ovol =0.4v io iol 4 17 ma high level output current v ovoh =2.4v io ioh -25.6 -6 ma pwm frequency f pwm 125 hz pwm resolution pwm res 8 bit digital io threshold point of the inputs aware_dis, ack_dis 1) io th 1.2 1.32 1.46 v pull down resistor at digital in and outputs v in > 0.75 v ddio r iopd 45 155 k? output voltage low ol=4 ma; v ddio =3.3 v io vol 0.5 v output voltage high oh=-4 ma; v ddio =3.3 v io voh 2.4 v low level output current 1) vol= 0.4v io iol 4 17 ma high level output current 1) voh=2.4v io ioh -25.6 -6 ma led driver 1a, 1b, 1c, 1d max. output current at each led output led1a, led1b, led1c, led1d i led 20 ma pwm frequency of the led outputs f pwm 166 khz pwm duty cycle of the led outputs pwm duty 50/50 ledc driver output current of ledc i ledc 9 13 ma pwm frequency of the compensation ledc f pwm 166 khz pwm duty cycle of ledc pwm duty 50/50 receiver voltage at amplifer input ca v ca 1.9 v voltage at amplifer input an v an 1.3 v capacitance of photo diode at input ca 1) c diode 70 pf 4 electrical characteristics elmos semiconductor ag data sheet qm-no.: 25ds0106e.01 production data - jul 29, 2013 elmos semiconductor ag reserves the right to change the detail specifcations as may be required to permit improvements in the design of its products. halios? gesture switch e527.16
6/10 5 functional description gesture defnition the implemented control logic recognizes the follow - ing gestures: ? awareness -> an object (e.g. a hand) enters the de - tection zone. ? tap -> a quick movement in the direction of the sensor back and forth similar to pushing a virtual button in the air. ? time select -> hover in the detection range for a certain time. ? wipe -> a movement horizontal to the sensor sur - face with a certain speed. ? proximity -> a movement with continues speed in direction to or from the sensor. system states the following states are possible: ? off -> after power on the devices enters the off- state. ? search light -> the lamp shines with a brightness of minimum pwm duty cycle. ? on -> the lamp shines with the adjusted bright - ness. ? proximity -> the lamp shines with a brightness in between 0% and 100%. step size is 0.4%. ? acknowledge -> short indication of a status change. if ack_dis is not set to high the indication is shown by a variation of the brightness. if the brightness is < 50% it will increase and if it is > 50% it will de - creased. control concept the control concept is based on three main procedures: search light if the lamp is in off state and an object enters the de - tection range the lamp shines with a brightness of min - imum pwm duty cycle. as soon as the object leaves the detection zone or it stays there > 3s the lamp is turned off. in the case the lamp is in on state "awareness" is notifed but there is no further reaction from the lamp. this indicates to the customer "i am ready" and helps to get a feeling of the detection zone. also it provides the possibility to have a glimpse to the surrounding area. by setting the input search_dis to vddio the change of the pwm output is disabled. switching on and off the "tap" gesture is acting like a toggle on/off switch. if the lamp is "on" it will be switched off and vice ver - sa. between two taps the detection zone has to be left. the same function can be realized by a wipe. proximity and acknowledge once the lamp is switch on it can be adjusted to any desired brightness. with the "time select" gesture the status "dimming" will be entered and be confrmed be an "acknowledge". now the brightness of the lamp follows the hand. the closer the hand the brighter the lamp shines and the farer away the darker it will be. leaving the detection zone for a certain time dur - ing dimming will stop the procedure and the previous brightness before the "time select" will be set. the dimming procedure is ended by a second "time se - lect" and will be confrmed again by an "acknowledge". that brightness will be kept until the lamp is switched off or a dimming procedure is started again. before starting the next procedure the detection zone has to be left. the confrmation via the "acknowledge" at the pwm output can also be disabled by setting the ack_dis to vddio but is still be indicate at the pin ack. overall this represents a state of the art gesture con - trolled input device. field-tested, reliable, suitable for many products and optimized to be implemented in lamps, the e527.16 opens the door to a new intuitive user interface - all of this under the same conditions as a standard switch. elmos semiconductor ag data sheet qm-no.: 25ds0106e.01 production data - jul 29, 2013 elmos semiconductor ag reserves the right to change the detail specifcations as may be required to permit improvements in the design of its products. halios? gesture switch e527.16
7/10 o f f s e a r c h l i g h t o n a c k n o w l e d g e d i m m i n g pw m = minimum pwm duty cycle o n = 0 se ar c h =1 ac k=0 a w a r e=1 pw m = 10 0 %/x o n = 1 se ar c h =0 ac k=0 a w a r e=1 pw m = a c k/ x / 1 00 % o n = 1 se ar c h =0 ac k=1 a w a r e=1 pw m = x % o n = 1 se ar c h =0 ac k=0 a w a r e=1 h a n d e n t e r s d e te c ti o n r a n g e g e s tu r e : ? t i m e s e l e c t ? pw m = minimum pwm duty cycle o n = 0 se ar c h =0 ac k=0 a w a r e=0 g e s tu r e : ? t a p ? h a n d e x i t s d e te c ti o n r a n g e h a n d e x i t s d e te c ti o n r a n g e for defined time a c k = 0 a c k = 1 g e s tu r e : ? p r o x i m i t y ? g e s tu r e : ? t i m e s e l e c t ? p o w e r o n g e s tu r e : ? t a p ? figure 1. flow chart elmos semiconductor ag data sheet qm-no.: 25ds0106e.01 production data - jul 29, 2013 elmos semiconductor ag reserves the right to change the detail specifcations as may be required to permit improvements in the design of its products. halios? gesture switch e527.16
8/10 6 package information the e527.16 is available in a pb free, rohs compliant qfn32l5 plastic package according to jedec mo-220 k, vari - ant vhhd-4. the package is classifed to moisture sensitivity level 3 (msl 3) according to jedec j-std-020 with a soldering peak temperature of (260+5)c. p ackage o utline s pecification date : 05.01.2012 author: asto 32 lead quad flat non leaded package (qfn32l5) qm-no.: 08sp0675.04 package outline and dimensions are according jedec mo-220 k, variant vhhd-4 description symbol mm inch min typ max min typ max package height a 0.80 0.9 0 1.00 0.031 0.035 0.039 stand off a1 0.00 0.02 0.05 0.000 0.00079 0.002 thickness of terminal leads, including lead finish a3 -- 0.20 ref -- -- 0.0079 ref -- width of terminal leads b 0.18 0.25 0.30 0.007 0.010 0.012 package length / width d / e -- 5.00 bsc -- -- 0.197 bsc -- length / width of exposed pad d2 / e2 3.50 3.65 3.80 0.138 0.144 0.150 lead pitch e -- 0.5 bsc -- -- 0.02 bsc -- length of terminal for soldering to substrate l 0.35 0.40 0.45 0.014 0.016 0.018 number of terminal positions n 32 32 note: the mm values are valid, the inch values contains rounding errors note 1: for assembler specific pin1 identification please see qm-document 08sp0363.xx (pin 1 specification) page 1 of 1 elmos semiconductor ag data sheet qm-no.: 25ds0106e.01 production data - jul 29, 2013 elmos semiconductor ag reserves the right to change the detail specifcations as may be required to permit improvements in the design of its products. halios? gesture switch e527.16
9/10 7 marking 7.1 top side ? elmos logo ? 52716 ? xxxsl ? ywwr@ signature explanation 52716 elmos project number a elmos project revision code xxx production lot number s assembler code l production line code yww year and week of assembly r mask revision code @ elmos internal code elmos semiconductor ag data sheet qm-no.: 25ds0106e.01 production data - jul 29, 2013 elmos semiconductor ag reserves the right to change the detail specifcations as may be required to permit improvements in the design of its products. halios? gesture switch e527.16
10/10 warning ? life support applications policy elmos semiconductor ag is continually working to improve the quality and reliability of its products. neverthe- less, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vul- nerability to physical stress. it is the responsibility of the buyer, when utilizing elmos semiconductor ag products, to observe standards of safety, and to avoid situations in which malfunction or failure of an elmos semiconductor ag product could cause loss of human life, body injury or damage to property. in the development of your design, please ensure that elmos semiconductor ag products are used within speci? ed operating ranges as set forth in the most recent product speci? cations. general disclaimer information furnished by elmos semiconductor ag is believed to be accurate and reliable. however, no responsibil- ity is assumed by elmos semiconductor ag for its use, nor for any infringements of patents or other rights of third parties, which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of elmos semiconductor ag. elmos semiconductor ag reserves the right to make changes to this document or the products contained therein without prior notice, to improve performance, reliability, or manufacturability. application disclaimer circuit diagrams may contain components not manufactured by elmos semiconductor ag, which are included as means of illustrating typical applications. consequently, complete information suf? cient for construction purpos- es is not necessarily given. the information in the application examples has been carefully checked and is believed to be entirely reliable. however, no responsibility is assumed for inaccuracies. furthermore, such information does not convey to the purchaser of the semiconductor devices described any license under the patent rights of elmos semiconductor ag or others. contact information headquarters elmos semiconductor ag heinrich-hertz-str. 1 ? d-44227 dortmund (germany) ? : +492317549100 ? : sales-germany@elmos.com ? : www.elmos.com regional sales and application support of? ce munich elmos semiconductor ag am ge? gelhof 12 ? d-85716 unterschlei?heim/eching (germany) ? : +49893183700 ? : sales-germany@elmos.com sales and application support of? ce north america elmos na. inc. 32255 northwestern highway ? suite 220 farmington hills mi 48334 (usa) ? : +12488653200 ? : sales-usa@elmos.com sales and application support of? ce korea and japan b-1007, u-space 2, #670 daewangpangyo-ro, sampyoung-dong, bunddang-gu, sungnam-si kyounggi-do 463-400 korea ? : +82317141131 ? : sales-korea@elmos.com sales and application support of? ce china elmos semiconductor technology (shanghai) co., ltd. unit london, 1bf gc tower ? no. 1088 yuan shen road, pudong new district ? shanghai, pr china, 200122 ? : +862151785178 ? : sales-china@elmos.com sales and application support of? ce singapore elmos semiconductor singapore pte ltd. 3a international business park #09-13 icon@ibp ? 609935 singapore ? : +65 6908 1261 ? : sales-singapore@elmos.com ? elmos semiconductor ag, 2013. reproduction, in part or whole, without the prior written consent of elmos semiconductor ag, is prohibited. elmos semiconductor ag data sheet qm-no.: 25ds0106e.01 production data - jul 29, 2013 elmos semiconductor ag reserves the right to change the detail specifcations as may be required to permit improvements in the design of its products. halios? gesture switch e527.16
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