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| sod323 plastic-encapsulate diodes features applications 1 h igh diode semiconductor sod3 23 p d 200mw v z 2.4v - 39v zener diodes ?? stabilizing voltage item symbol unit conditions max power dissipation p d mw t a =25 200 zener current i z ma p v /v z maximum junction temperature t j 150 storage temperature range t stg -65 to +150 electrical characteristics t a =25 unl ess otherwise specified item symbol unit conditions max thermal resistance r ja /w ? 625 forward voltage v f v i f =10ma 0.9 bzt52c2v4s thru bzt52c39s between junction and ambient
electrical ch aracteristics (t a =25 unless otherwise noted) h igh diode semiconductor ze ner voltage range (note 2) maximum zener impedance (note 3) maximum reverse current (note 2) typical temperature coefficient @i zt c mv/ te st current i zt c v z @i zt i zt z zt @i zt z zk @i zk i zk i r v r t ype marking nom(v) min(v) max(v) (ma) ? (ma) a v min max ma b zt52c2v4s wx 2.4 2.20 2.60 5 100 600 1.0 50 1.0 -3.5 0 5 b zt52c2v7s w1 2.7 2.5 2.9 5 100 600 1.0 20 1.0 -3.5 0 5 b zt52c3v0s w2 3.0 2.8 3.2 5 95 600 1.0 10 1.0 -3.5 0 5 b zt52c3v3s w3 3.3 3.1 3.5 5 95 600 1.0 5 1.0 -3.5 0 5 b zt52c3v6s w4 3.6 3.4 3.8 5 90 600 1.0 5 1.0 -3.5 0 5 b zt52c3v9s w5 3.9 3.7 4.1 5 90 600 1.0 3 1.0 -3.5 0 5 b zt52c4v3s w6 4.3 4.0 4.6 5 90 600 1.0 3 1.0 -3.5 0 5 b zt52c4v7s w7 4.7 4.4 5.0 5 80 500 1.0 3 2.0 -3.5 0.2 5 b zt52c5v1s w8 5.1 4.8 5.4 5 60 480 1.0 2 2.0 -2.7 1.2 5 b zt52c5v6s w9 5.6 5.2 6.0 5 40 400 1.0 1 2.0 -2 2.5 5 b zt52c6v2s wa 6.2 5.8 6.6 5 10 150 1.0 3 4.0 0.4 3.7 5 b zt52c6v8s wb 6.8 6.4 7.2 5 15 80 1.0 2 4.0 1.2 4.5 5 b zt52c7v5s wc 7.5 7.0 7.9 5 15 80 1.0 1 5.0 2.5 5.3 5 b zt52c8v2s wd 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2 5 b zt52c9v1s we 9.1 8.5 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0 5 b zt52c10s wf 10 9.4 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0 5 b zt52c11s wg 11 10.4 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0 5 b zt52c12s wh 12 11.4 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0 5 b zt52c13s wi 13 12.4 14.1 5 30 170 1.0 0.1 8.0 7.0 11.0 5 b zt52c15s wj 15 13.8 15.6 5 30 200 1.0 0.1 10.5 9.2 13 5 b zt52c16s wk 16 15.3 17.1 5 40 200 1.0 0.1 11.2 10.4 14 5 b zt52c18s wl 18 16.8 19.1 5 45 225 1.0 0.1 12.6 12.4 16 5 b zt52c20s wm 20 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0 5 b zt52c22s wn 22 20.8 23.3 5 55 250 1.0 0.1 15.4 16.4 20.0 5 b zt52c24s wo 24 22.8 25.6 5 70 250 1.0 0.1 16.8 18.4 22.0 5 b zt52c27s wp 27 25.1 28.9 2 80 300 0.5 0.1 18.9 21.4 25.3 2 b zt52c30s wq 30 28.0 32.0 2 80 300 0.5 0.1 21.0 24.4 29.4 2 b zt52c33s wr 33 31.0 35.0 2 80 325 0.5 0.1 23.1 27.4 33.4 2 b zt52c36s ws 36 34.0 38.0 2 90 350 0.5 0.1 25.2 30.4 37.4 2 b zt52c39s wt 39 37.0 41.0 2 130 350 0.5 0.1 27.3 33.4 41.2 2 notes: 1. device mounted on ceramic pcb 7. 6mm x 9.4mm x 0.87mm with pad areas 25mm 2 . 2. short dura tion test pulse used to minimize self-heating effect. 3. f = 1khz. 3 h igh diode semiconductor typical characteristics z ener characteristics ( ) ( ) 4 jshd jshd h l j k ' l r g h 6 h p l f r q g x f w r u 3 d f n d j h 2 x w o l q h ' l p h q v l r q v sod323 6 x j j h v w h g 3 d g / d \ r x w sod323 5 reel taping specifications for surface mount devices-sod323 h igh diode semiconductor 1.25 1.46 2.9 |
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