? 2017 ixys corporation, all rights reserved ds100856a(9/17) ixty03n90phv IXTP03N90P v dss = 900v i d25 = 300ma r ds(on) ? ? ? ? ? 80 ? ? ? ? ? symbol test conditions maximum ratings v dss t j = 25 ? c to 150 ? c 900 v v dgr t j = 25 ? c to 150 ? c, r gs = 1m ? 900 v v gss continuous ? 20 v v gsm transient ? 30 v i d25 t c = 25 ? c 300 ma i dm t c = 25 ? c, pulse width limited by t jm 600 ma dv/dt i s ? i dm , v dd ? v dss , t j ? 150c 10 v/ns p d t c = 25 ? c28w t j -55 ... +150 ? c t jm 150 ? c t stg -55 ... +150 ? c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque (to-220) 1.13 / 10 nm/lb.in weight to-252hv 0.35 g to-220 3.00 g features ? international standard package ? high voltage package ? low q g ? suitable for v ge = 5v drive advantages ? high power density ? easy to mount ? space savings applications ? dc-dc converters ? switch-mode and resonant-mode power supplies ? ac and dc motor drives ? ? discharge circiuts in lasers, spark igniters, rf generators ?? ? high voltage pulse power applications polar tm power mosfet n-channel enhancement mode g = gate d = drain s = source tab = drain g d s to-220 (ixtp) d (tab) advance technical information symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 900 v v gs(th) v ds = v gs , i d = 100 a 1.5 3.0 v i gss v gs = ? 20v, v ds = 0v ??????????????????????? 25 na i dss v ds = v dss , v gs = 0v 25 na t j = 125 ? c 2 ? a r ds(on) v gs = 5v, i d = 0.5 ? i d25 , note 1 70 85 ? v gs = 10v, i d = 0.5 ? i d25 , note 1 66 80 ? to-252 (ixty..hv) g s d (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixty03n90phv IXTP03N90P ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065b1 6,683,344 6,727,585 7,005,734b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123b1 6,534,343 6,710,405b2 6,759,692 7,063,975b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728b1 6,583,505 6,710,463 6,771,478b2 7,071,537 note 1. pulse test, t ? 300 ? s, duty cycle, d ?? 2%. symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max g fs v ds = 50v, i d = 0.5 ? i d25 , note 1 85 140 ms c iss 80.0 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 6.3 pf c rss 1.7 pf t d(on) 7 ns t r 20 ns t d(off) 26 ns t f 38 ns q g(on) 4.0 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 0.4 nc q gd 2.4 nc r thjc 4.4 ? c/w r thcs to-220 0.50 ? c/w resistive switching times v gs = 10v, v ds = 50v, i d = 0.5 ? i d25 r g = 50 ? ? (external) advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. source-drain diode symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max i s v gs = 0v 0.3 a i sm repetitive, pulse width limited by t jm 1.2 a v sd i f = i s , v gs = 0v, note 1 1.4 v t rr 280 ns q rm 0.9 ???????????? c i rm 6.5 a i f = 1a, -di/dt = 100a/ s v r = 100v to-220 outline 1 - gate 2,4 - drain 3 - source ? ?? ? ? ? ? ? ?? ? ? ? ? ? ?? ? ?? ? ?? ? ?? ? ? ? ?? ? ?? ? ? ? ? ? ?? ? ?? ? ?? ?? ? ? ? ??? ? ??????? ??????? ??????? ??????? ??????? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 1 - gate 2 - source 3 - drain to-252hv outline
? 2017 ixys corporation, all rights reserved ixty03n90phv IXTP03N90P fig. 1. output characteristics @ t j = 25 o c 0 50 100 150 200 250 300 0 5 10 15 20 25 30 v ds - volts i d - milliamperes v gs = 10v 4v 3v 5v fig. 3. output characteristics @ t j = 125 o c 0 50 100 150 200 250 300 0 102030405060 v ds - volts i d - milliamperes v gs = 10v 3v 2v 4v 5v fig. 4. r ds(on) normalized to i d = 150ma value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 150ma i d = 300ma fig. 5. r ds(on) normalized to i d = 150ma value vs. drain current 0 1 2 3 4 5 6 0 100 200 300 400 500 600 700 800 i d - milliamperes r ds(on) - normalized v gs = 10v t j = 125 o c t j = 25 o c fig. 2. extended output characteristics @ t j = 25 o c 0 100 200 300 400 500 600 700 800 0 50 100 150 200 250 300 v ds - volts i d - milliamperes v gs = 10v 6v 5v 3v 4v fig. 6. normalized breakdown & threshold voltages vs. junction temperature 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 -60 -40 -20 0 20 40 60 80 100 120 140 160 t j - degrees centigrade bv dss / v gs(th) - normalized bv dss v gs(th)
ixys reserves the right to change limits, test conditions, and dimensions. ixty03n90phv IXTP03N90P fig. 8. input admittance 0 50 100 150 200 250 300 350 2.0 2.5 3.0 3.5 4.0 4.5 v gs - volts i d - milliamperes t j = 125 o c 25 o c - 40 o c v ds = 50v fig. 7. maximum drain current vs. case temperature 0 50 100 150 200 250 300 350 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - milliamperes fig. 9. transconductance 0 50 100 150 200 250 300 350 400 450 0 50 100 150 200 250 300 350 i d - milliamperes g f s - millisiemens t j = - 40 o c, 25 o c v ds = 50v 125 o c fig. 10. forward voltage drop of intrinsic diode 0 100 200 300 400 500 600 700 800 900 0.4 0.5 0.6 0.7 0.8 0.9 1 v sd - volts i s - milliamperes t j = 125 o c t j = 25 o c fig. 11. gate charge 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 3.5 4 q g - nanocoulombs v gs - volts v ds = 450v i d = 150ma i g = 1ma fig. 12. capacitance 1 10 100 1,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss
? 2017 ixys corporation, all rights reserved ixty03n90phv IXTP03N90P ixys ref: t_03n90p(f1-g40) 9-18-17 fig. 14. maximum transient thermal impedance 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - k / w fig. 13. forward-bias safe operating area 10 100 1000 100 1,000 v ds - volts i d - milliamperes t j = 150 o c t c = 25 o c sin g le pulse 100 s r ds( on ) limit 1ms 10ms dc
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