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| inchange semiconductor product specification silicon npn power transistors 2SC3947 description ? with to-3pml package ? high voltage ,high speed applications ? for tv horizontal output and power switching applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions max unit v cbo collector-base voltage open emitter 850 v v ceo collector-emitter voltage open base 500 v v ebo emitter-base voltage open collector 7 v i c collector current 5 a i cm collector current-peak 8 a i b base current 2 a p c collector dissipation t c =25 ?? 70 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3pml) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SC3947 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ;r be = ?t 500 v v (br)cbo collector-base breakdown voltage i c =1ma ;i e =0 850 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 7 v v cesat collector-emitter saturation voltage i c =2.5a ;i b =0.5a 1.0 v v besat base-emitter saturation voltage i c =2.5a ;i b =0.5a 1.5 v i cbo collector cut-off current v ce =800v; i e =0 t c =100 ?? 0.1 1.0 ma i ebo emitter cut-off current v eb =6v ;i c =0 0.1 ma h fe dc current gain i c =2.5a ; v ce =5v 10 30 f t transition frequency i c =0.5a ; v ce =10v 20 mhz c ob output capacitance i e =0 ; v cb =10v;f=1mhz 70 pf switching times t r rise time 0.5 | s t stg storage time 3.0 | s t f fall time i c =2.5a ; v cc =250v i b1 =0.5a; i b2 =-1a 0.3 | s inchange semiconductor product specification 3 silicon npn power transistors 2SC3947 package outline fig.2 outline dimensions |
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