c opyright ruichi ps semiconductor co . , ltd rev . a C aug ., 201 2 www. ruichips .com ru 30 65 l n - channel advanced power mosfet mosfet features pin description applications symbol paramete r rating unit common ratings ( t c =25 c unless otherwise noted) v dss drain - source voltage 30 v v gss gate - source voltage 2 0 t j maximum junction temperature 175 c t stg storage temperature range - 55 to 175 c i s diode continuous forward current t c =25 c 65 a mounted on large heat sink i d p 300 s pulse drain current tested t c =25 c 260 a i d continuous drain current ( v gs =10v) t c =25 c 65 a t c =100 c 50 p d maximum power dissipation t c =25 c 60 w t c = 100 c 30 w r q jc thermal resistance - junction to case 2.5 c /w drain - source avalanche ratings e as avalanche energy, single pulsed 144 m j ? 30 v/ 65 a, r ds ( on ) = 4 m ( t y p .)@ v gs =10v r ds ( on ) = 6 m ( t y p .)@ v gs = 4.5 v ? super high dense cell design ? ultra low on - resistance ? 100% avalanche tested ? lead free and green devices available ( rohs compliant) ? switching application systems absolute maximum ratings n - channel mosfe t to - 2 52
c opyright ruichips semiconductor co . , ltd rev . a C aug ., 201 2 2 www. ruichips .com ru 30 65 l electrical characteristics ( t c =25 c unless otherwise noted) symbol parameter test condition ru 30 65 l unit min. typ. max. static characteristics bv dss drain - so urce breakdown voltage v gs =0v, i ds =250 m a 30 v i dss zero gate voltage drain current v ds = 30 v, v gs =0v 1 m a t j =85 c 3 0 v gs ( th) gate threshold voltage v ds =v gs , i ds =250 m a 1 1.2 1.5 v i gss gate leakage current v gs = 2 0 v, v ds =0v 10 0 n a r ds ( on ) drain - source on - state resistance v gs = 10 v, i ds = 30 a 4 6 m w v gs = 4.5 v, i ds = 2 0 a 6 9 m w notes : calculated continuous current based on maximum allowable junction temperature . package limitation current is 60 a. pulse width limited by safe operating area. limited by t jmax , i as = 24 a, v dd = 24 v, r g = 50 , starting t j = 25c . pulse test ; p ulse width 3 00 m s, duty cycle 2% . guaranteed by design, not subject to production testing . d iode characteristics v sd diode forward voltage i sd = 30 a, v gs =0v 1. 2 v t rr reverse recovery time i sd = 30 a, dl sd /dt=100a/ m s 3 2 ns q rr reverse recovery cha rge 20 nc dynamic characteristics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 1. 8 w c iss input capacitance v gs =0v, v ds = 15 v, frequency=1.0mhz 2100 pf c oss output capacitance 3 80 c rss reverse transfer capacitance 240 t d ( on ) turn - on delay ti me v dd = 15 v, r l = 0. 5 w , i ds = 30 a, v gen =10v, r g = 4.7 w 8 ns t r turn - on rise time 13 t d ( off ) turn - off delay time 27 t f turn - off fall time 1 0 gate charge characteristics q g total gate charge v ds = 24 v, v gs =10v, i ds = 30 a 30 nc q gs gate - source ch arge 6 q gd gate - drain charge 9
c opyright ruichips semiconductor co . , ltd rev . a C aug ., 201 2 3 www. ruichips .com ru 30 65 l typical characteristics power dissipation drain current p tot - power ( w) i d - drain curre nt (a) t j - junction temperature ( c) t j - junction temperature ( c) safe operation area thermal transient impedance i d - drain current (a) normalized effective transient v ds - drain - source voltage (v) square wave pulse duration ( sec)
c opyright ruichips semiconductor co . , ltd rev . a C aug ., 201 2 4 www. ruichips .com ru 30 65 l typical characteristics output characteristics drain - source on resistance i d - drain current (a) r ds(on) - on resistance ( m ) v ds - drain - source voltage (v) i d - drain current ( a) drain - source on resistance gate threshold voltage r ds ( on ) - on - resistance (m ? ) normalized threshold voltage v gs - gate - source voltage (v) t j - junction temperature (c)
c opyright ruichips semiconductor co . , ltd rev . a C aug ., 201 2 5 www. ruichips .com ru 30 65 l typical characteristics drain - source on resistance source - drain diode forward normalized on resistance i s - source current (a) t j - junction tem perature (c) v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) v gs - gate - source voltage (v) v ds - drain - source voltage (v) q g - gate charge (nc)
c opyright ruichips semiconductor co . , ltd rev . a C aug ., 201 2 6 www. ruichips .com ru 30 65 l avalanche test circuit an d waveforms switching time test circuit and waveforms
c opyright ruichips semiconductor co . , ltd rev . a C aug ., 201 2 7 www. ruichips .com ru 30 65 l ordering and marking information device marking package packaging quantity reel size tape width ru 30 65 l ru 30 65 l to - 252 tape&reel 2500 1 3 16mm
c opyright ruichips semiconductor co . , ltd rev . a C aug ., 201 2 8 www. ruichips .com ru 30 65 l package information to252 - 2l all dimensions refer to jedec standard do not include mold flash or protrusions symbol mm inch symbol mm inch min max min max min max min max a 2.200 2.400 0.087 0.094 l 9.800 10.400 0.386 0.409 a1 0.000 0.127 0.000 0.005 l1 2.900 ref. 0.114 r ef. b 0.660 0.860 0.026 0.034 l2 1.400 1.700 0.055 0.067 c 0.460 0.580 0.018 0.023 l3 1.600 ref. 0.063ref. d 6.500 6.700 0.256 0.264 l4 0.600 1.000 0.024 0.039 d1 5.100 5.460 0.201 0.215 1.100 1.300 0.043 0.051 d2 4.830 ref. 0.190 ref. 0 8 0 8 e 6.000 6.200 0.236 0.244 h 0.000 0.300 0.000 0.012 e 2.186 2.386 0.086 0.094 v 5.350 ref. 0.211 ref.
c opyright ruichips semiconductor co . , ltd rev . a C aug ., 201 2 9 www. ruichips .com ru 30 65 l customer service worldwide sales and service : s ales@ru i chips.com technical s upport : technical@ruichips.com investor relations contacts : investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : ( 86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com
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