product summary part number bv dss r ds(on) i d irhi7460se 500v 0.32 20a features: radiation hardened up to 1 x 10 5 rads (si) single event burnout (seb) hardened single event gate rupture (segr) hardened gamma dot (flash x-ray) hardened neutron tolerant identical pre- and post-electrical test conditions repetitive avalanche rating dynamic dv/dt rating simple drive requirements ease of paralleling hermetically sealed electrically isolated ceramic eyelets n-channel single event effect (see) rad hard provisional data sheet no. pd-9.1224a pre-radiation 500 volt, 0.32 ? ? , (see) rad hard hexfet international rectifiers (see) rad hard technol- ogy hexfets demonstrate virtual immunity to see failure. additionally, under identical pre- and post-ra- diation test conditions, international rectifiers rad hard hexfets retain identical electrical specifica- tions up to 1 x 10 5 rads (si) total dose. no compen- sation in gate drive circuitry is required. these devices are also capable of surviving transient ionization pulses as high as 1 x 10 12 rads (si)/sec, and return to normal operation within a few microseconds. since the see process utilizes international rectifiers pat- ented hexfet technology, the user can expect the highest quality and reliability in the industry. rad hard hexfet transistors also feature all of the well-established advantages of mosfets, such as volt- age control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. they are well-suited for applications such as switch- ing power supplies, motor controls, inverters, chop- pers, audio amplifiers and high-energy pulse circuits in space and weapons environments. irhi7460se repetitive avalanche and dv/dt rated hexfet ? transistor absolute maximum ratings parameter irhi7460se units i d @ v gs = 12v, t c = 25c continuous drain current 20 i d @ v gs = 12v, t c = 100c continuous drain current 12 i dm pulsed drain current ? 80 p d @ t c = 25c max. power dissipation 300 w linear derating factor 2.4 w/k ? v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 500 mj i ar avalanche current ? 20 a e ar repetitive avalanche energy ? 30 mj dv/dt peak diode recovery dv/dt ? 3.5 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063 in. (1.6mm) from case for 10 sec.) weight 10.9 (typical) g o c a downloaded from: http:///
thermal resistance parameter min. typ. max. units test conditions r thjc junction-to-case 0.42 r thja junction-to-ambient 30 k/w ? rthcs case-to-sink 0.21 typical socket mount source-drain diode ratings and characteristics parameter min. typ. max. units test conditions i s continuous source current (body diode) 20 modified mosfet symbol showing the i sm pulse source current (body diode) ? 80 integral reverse p-n junction rectifier. v sd diode forward voltage 1.8 v t j = 25c, i s = 20a, v gs = 0v ? t rr reverse recovery time 1200 ns t j = 25c, i f = 20a, di/dt 100a/ s q rr reverse recovery charge 16 cv dd 50v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . electrical characteristics @ tj = 25c (unless otherwise specified) parameter min. typ. max. units test conditions bv dss drain-to-source breakdown voltage 500 v v gs = 0v, i d = 1.0 ma ? bv dss / ? t j temperature coefficient of breakdown 0.68 v/c reference to 25c, i d = 1.0 ma voltage r ds(on) static drain-to-source 0.32 v gs = 12v, i d = 12a on-state resistance 0.36 v gs = 12v, i d = 20a v gs(th) gate threshold voltage 2.5 4.5 v v ds = v gs , i d = 1.0 ma g fs forward transconductance 3.5 s ( )v ds > 15v, i ds = 12a ? i dss zero gate voltage drain current 50 v ds = 0.8 x max rating,v gs = 0v 250 v ds = 0.8 x max rating v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 260 v gs = 12v, i d = 20a q gs gate-to-source charge 40 v ds = max. rating x 0.5 q gd gate-to-drain (miller) charge 200 t d(on) turn-on delay time 45 v dd = 250v, i d = 20a, t r rise time 140 r g = 2.35 t d(off) turn-off delay time 140 t f fall time 110 l d internal drain inductance 8.7 l s internal source inductance 8.7 c iss input capacitance 6400 v gs = 0v, v ds = 25v c oss output capacitance 1100 f = 1.0 mhz c rss reverse transfer capacitance 375 irhi7460se device pre-radiation ? a nc pf nh ns measured from thedrain lead, 6mm (0.25 in.) from package to center of die. measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. modified mosfetsymbol showing the internal inductances. na a downloaded from: http:///
table 2. high dose rate ? 10 11 rads (si)/sec 10 12 rads (si)/sec parameter min. typ max. min. typ. max. units test conditions v dss drain-to-source voltage 400 400 v applied drain-to-source voltage during gamma-dot i pp 7 7 a peak radiation induced photo-current di/dt 16 2.3 a/sec rate of rise of photo-current l 1 27 133 h circuit inductance required to limit di/dt table 3. single event effects ? let (si) fluence range v ds bias v gs bias parameter typ. units ion (mev/mg/cm 2 ) (ions/cm 2 )( m) (v) (v) bv dss 500 v ni 28 1 x 10 5 ~35 400 -5 radiation performance of rad hard hexfets irhi7460se device radiation characteristics table 1. low dose rate ? ? irhi7460se parameter 100k rads (si) units test conditions ? min. max. bv dss drain-to-source breakdown voltage 500 v gs = 0v, i d = 1.0 ma v gs(th) gate threshold voltage ? 2.5 4.5 v gs = v ds , i d = 1.0 ma i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v i dss zero gate voltage drain current 50 av ds = 0.8 x max rating, v gs = 0v r ds(on)1 static drain-to-source ? 0.32 v gs = 12v, i d = 12a on-state resistance one v sd diode forward voltage ? 1.8 v t c = 25c, i s = 20a, v gs = 0v international rectifier radiation hardened hex- fets are tested to verify their hardness capability. the hardness assurance program at international rectifier uses two radiation environments. every manufacturing lot is tested in a low dose rate (total dose) environment per mll-std-750, test method 1019. international rectifier has imposed a standard gate voltage of 12 volts per note 6 and a v dss bias condition equal to 80% of the device rated voltage per note 7. pre- and post-radiationlimits of the devices irradiated to 1 x 10 5 rads (si) are identical and are presented in table 1. the val- ues in table 1 will be met for either of the two low dose rate test circuits that are used. both pre- and post-radiation performance aretested and specified using the same drive circuitry and test conditions in order to provide a direct com- parison. it should be noted that at a radiation level of 1 x 10 5 rads (si), no change in limits are speci- fied in dc parameters.high dose rate testing may be done on a special request basis, using a dose rate up to 1 x 10 12 rads (si)/sec. international rectifier radiation hardened hexfets have been characterized in neutron and heavy ion single event effects (see) environments. single event effects characterization is shown in table 3. v na downloaded from: http:///
irhi7460se device radiation characteristics case outline and dimensions to-259aa ? repetitive rating; pulse width limited bymaximum junction temperature. refer to current hexfet reliability report. ? @ v dd = 50v, starting t j = 25c, e as = [0.5 * l * (i l 2 ) * [bv dss /(bv dss -v dd )] peak i l = 20a, v gs = 12v, 25 r g 200 ? i sd 20a, di/dt 170 a/ s, v dd bv dss , t j 150c suggested rg = 2.35 ? pulse width 300 s; duty cycle 2% ? k/w = c/ww/k = w/c ? total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019. ? total dose irradiation with v ds bias. v ds = 0.8 rated bv dss (pre-radiation) applied and v gs = 0 during irradiation per mll-std-750, method 1019. ? this test is performed using a flash x-raysource operated in the e-beam mode (energy ~2.5 mev), 30 nsec pulse. ? process characterized by independent laboratory. ? all pre-radiation and post-radiation testconditions are identical to facilitate direct comparison for circuit applications. world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 3-30-4 nishi-ikeburo 3-chome, toshima-ki, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/ data and specifications subject to change without notice. 6/96 legend 1 - drain2 - source 3 - gate notes: 1. dimensioning and tolerancing per ansi y14.5m-1982 2. all dimensions are show in millimeters (inches). beryllia warning per mil-prf-19500 packages containing beryllia shall not be ground, sandblasted,machined, or have other operations performed on them which will produce beryllia or beryllium dust. furthermore, beryllium oxides packages shall not be placed in acids that will produce fumes containing beryllium. caution conforms to jedec outline to-259aa dimensions in millimeters and (inches) downloaded from: http:///
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