tsf10l100cw - TSF10L200CW - patented trench schottky technology - excellent high temperature stability - low forward voltage - low power loss/ high efficiency - high forward surge capability - halogen-free according to iec 61249-2-21 molding compound meets ul 94 v-0 flammability rating packing code with suffix "g" means green compound (halogen-free) terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 2 whisker test mounting torque: 0.56 nm max. v rrm v dv/dt v/ s typ max typ max typ max i f = 5a 0.71 0.80 0.81 0.88 0.84 0.90 i f = 10a 0.91 1.00 0.89 0.96 0.92 0.98 i f = 5a 0.62 0.71 0.67 0.74 0.72 0.78 i f = 10a 0.72 0.81 0.76 0.83 0.80 0.86 t j = 25c - 100 - 50 - 50 a t j = 125c -10- 5 - 5ma r jc c/w t j c t stg c document number: ds_d0000084 version: a15 operating junction temperature range typical thermal resistance per diode t j = 25c ito-220ab symbol storage temperature range note 1: pulse test with pulse width=300 s, 1% duty cycle instantaneous reverse current per diode at rated reverse voltage i fsm a v typical applications mechanical data maximum ratings and electrical characteristics (t a = 25c unless otherwise noted) - 55 to +150 case: ito-220ab polarity: as marked trench schottky barrier rectifier is designed for high frequency switched mode power supplies such as adapters, lighting, and dc/dc converters. tsf10l 100cw weight: 1.7 g (approximately) voltage rate of change (rated v r ) 6.5 tsf10l 200cw 200 per device taiwan semiconductor 10a, 100v - 200v trench schottky rectifiers features - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec maximum average forward rectified current a peak forward surge current, 8.3ms single half sine-wave superimposed on rated load per diode 5 10 i r maximum repetitive peak reverse voltage 150 100 t j = 125c - 55 to +150 100 10000 unit v f instantaneous forward voltage per diode (note1) parameter tsf10l 150cw i f(av) per diode
document number: ds_d0000084 version: a15 tsf10lxxxcw (note 1) ito-220ab example packing code suffix c0 g preferred part no. tsf10l100cw - TSF10L200CW taiwan semiconductor ordering information packing package part no. packing code packing code suffix ratings and characteristics curves (t a = 25c unless otherwise noted) tsf10l150cw c0g part no. tsf10l150cw note 1: " xxx" defi nes voltage from 100v (tsf10l100cw) to 200v (TSF10L200CW) 50 / tube green compound description c0 packing code g 0 2 4 6 8 10 12 0 25 50 75 100 125 150 fig. 1 forward current derating curve with heatsink 3in x 5in x 0.25in al-plate case temperature ( o c) average forward current (a) 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 fig. 2 typical forward characteristics tsf10l100cw instantaneous forward current (a) forward voltage (v) t j =150 o c t j =125 o c t j =25 o c t j =100 o c 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 fig. 3 typical forward characteristics tsf10l150cw instantaneous forward current (a) forward voltage (v) t j =150 o c t j =125 o c t j =25 o c t j =100 o c 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 fig. 4 typical forward characteristics TSF10L200CW instantaneous forward current (a) forward voltage (v) t j =150 o c t j =125 o c t j =25 o c t j =100 o c
document number: ds_d0000084 version: a15 tsf10l100cw - TSF10L200CW taiwan semiconductor 0.00001 0.0001 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 fig. 6 typical reverse characteristics tsf10l150cw percent of rated peak reverse voltage (%) instantaneous reverse current (ma) t j =150 o c t j =125 o c t j =25 o c t j =100 o c 0.00001 0.0001 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 fig. 5 typical reverse characteristics tsf10l100cw percent of rated peak reverse voltage (%) instantaneous reverse current (ma) t j =150 o c t j =125 o c t j =25 o c t j =100 o c 10 100 1000 0.1 1 10 100 fig. 8 typical junction capacitance f=1.0mhz vsig=50mvp-p junction capacitance (pf) reverse voltage (v) tsf10l150cw tsf10l100cw TSF10L200CW 0.00001 0.0001 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 fig. 7 typical reverse characteristics TSF10L200CW percent of rated peak reverse voltage (%) instantaneous reverse current (ma) t j =150 o c t j =125 o c t j =25 o c t j =100 o c 0 25 50 75 100 125 150 1 10 100 peak forward surge current (a) number of cycles at 60 hz fig. 9 maximum non-repetitive forward surge current 8.3ms single half sine-wave
dim. min max min max a 4.30 4.70 0.17 0.19 b 2.50 3.16 0.10 0.12 c 2.30 2.96 0.09 0.12 d 0.46 0.76 0.02 0.03 e 6.30 6.90 0.25 0.27 f 9.60 10.30 0.38 0.41 g 3.00 3.40 0.12 0.13 h 0.95 1.45 0.04 0.06 i 0.50 0.90 0.02 0.04 j 2.40 3.20 0.09 0.13 k 14.80 15.50 0.58 0.61 l - 4.10 - 0.16 m 12.60 13.80 0.50 0.54 n - 1.80 - 0.07 o 2.41 2.67 0.09 0.11 marking diagram p/n = specific device code g = green compound yww = date code f = factory code document number: ds_d0000084 version: a15 tsf10l100cw - TSF10L200CW taiwan semiconductor package outline dimensions ito-220ab unit (mm) unit (inch)
creat by art document number: ds_d0000084 version: a15 the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale. tsf10l100cw - TSF10L200CW taiwan semiconductor notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
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