hf ssb applications rf & microwave transistors .380 4l stud (m135) epoxy sealed . optimized for ssb . 30 mhz . 50 volts . common emitter . gold metallization . p out = 75 w min. with 14.0 db gain description the sd1733 is a 50 v class ab epitaxial silicon npn planar transistor designed primarily for ssb and vhf communications. this device utilizes emitter ballasting for improved ruggedness and reliability. pin connection branding TH513 order code sd1733 absolute maximum ratings (t case = 25 c) symbol parameter value unit v cbo collector-base voltage 110 v v ceo collector-emitter voltage 55 v v ebo emitter-base voltage 4.0 v i c device current 3.25 a p diss power dissipation 127 w t j junction temperature +200 c t stg storage temperature - 65 to +150 c r th(j-c) junction-case thermal resistance 2.0 c/w sd1733 (TH513) 1. collector 3. base 2. emitter 4. emitter thermal data november 1992 1/4
electrical specifications (t case = 25 c) symbol test conditions value unit min. typ. max. p out f = 30 mhz v ce = 50 v 75 e e w g p *p out = 75 w pep v ce = 50 v 14 e e db imd* p out = 75 w pep v ce = 50 v e e - 30 dbc h c* p out = 75 w pep v ce = 50 v 37 e e % c ob f = 1 mhz v cb = 50 v e e 100 pf note: * f 1 = 30.00 mhz, f 2 = 30.001 mhz static symbol test conditions value unit min. typ. max. bv ces i c = 100ma v be = 0v 110 e e v bv ceo i c = 200ma i b = 0ma 55 e e v bv ebo i e = 10ma i c = 0ma 4.0 e e v h fe v ce = 6v i c = 1.4a 19 e 50 e dynamic sd1733 (TH513) 2/4
test circuit c1 : 20 - 500pf c2 : 50 - 500pf c3, c4 : 3.9nf c5 : 100nf c6 : 2.2 m f c7 : 56pf c9 : 100pf c10 : 20 - 150pf c11 : 20 - 500pf l1 : 3 turns, diameter wire 1.5mm, int. diameter 7mm, pitch 2.5mm l2 : 22 m h choke coil l3 : 4 turns, diameter wire 1.5mm, int. diameter 10mm, pitch 2.5mm l4 : ferroxcube choke coil l5 : 7 turns, diameter wire 1.5mm, int. diameter 12mm, pitch 2.5mm r2 : 33 w r3 : 4.7 w bias circuit sd1733 (TH513) 3/4
package mechanical data ref.: dwg. no.12-0135 information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. sgs-thomson microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of sgs-thomson microelectonics. ? 1994 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a sd1733 (TH513) 4/4
|
