cha racteristic symbol es4a ES4B es4c es4d es4e es4g es4j unit c a se: smb/do-214aa,do-214ab, molded plastic classification rating 94v-o super-fast recovery time low power loss ideally suited for automatic assembly surge overload rating to100a peak pf es4a ? es4j 4.0 a surface mount glass passivated superfast diode features ! g l ass passivated die construction ! ! low forward voltage drop, high efficiency ! ! ! ! plastic case material has ul flammability mechanic al d ata ! ! te rminals: solder plated, solderable per mil-std-750, method 2026 ! polarity: cathode band or cathode notch ! marking: type number maximum r a tings and electrical characteristics @t a =25 c unless otherwise specified p eak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 50 100 150 200 300 400 600 v rm s reverse voltage v r(rm s) 35 70 105 140 210 280 420 v av erage rectified output current @t l = 120 c i o 4.0 a non-repet i tive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 100 a forward vo ltage @i f = 4. 0a v fm 0.95 1.30 1.7 v pe a k reverse current @t a = 25 c a t rated dc blocking voltage @t a = 100 c i rm 5.0 500 a revers e rec overy time (note 1) t rr 35 ns t y pical junction capacitance (note 2) c j t y pical thermal resistance (note 3) r jl 35 c /w operat i ng and storage temperature range t j, t stg -65 to +150 c note: 1. measured with i f = 0. 5a , i r = 1 .0a, i rr = 0.25a. see figure 5. 2. measured at 1.0 mhz and applied reverse voltage of 4.0 v dc. 3. mounted on p.c. board with 8.0mm 2 l and area. 1 of 2 es4a ? es4j z ibo seno electronic engineering co., ltd. www.senocn.com 45 a b c d g h e j ! ! lea d free: for rohs / lead free version weight: smc weight: 0.20 grams (approx.) smc/ do-214 ab dim m in max a 5.59 6. 22 b 6.60 7. 11 c 2.75 3. 25 d 0.152 0. 305 e 7. 75 8. 13 f 2.00 2. 62 g 0. 051 0. 203 h 0.76 1. 27 all d i mensions in mm a l l d a t a s h e e t
0.01 0.1 1.0 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i , inst antaneous forward current (a) f v , inst antaneous forward voltage (v) fig. 2 typical forward characteristics f t = 25 c pulse width = 300 s j m 50v dc approx 50 ni (non-inductive) w 10 ni w 1.0 ni w oscilloscope (note 1) pulse generator (note 2) device under t est t rr settimebasefor5/10ns/cm +0.5a 0a -0.25a -1.0a notes: 1. rise time = 7.0ns max. input impedance = 1.0m , 22pf. 2. rise time = 10ns max. input impedance = 50 . w w fig. 5 reverse recovery time characteristic and test circuit (+) (+) (-) (-) 1 10 100 1 10 100 c , cap acitance (pf) j v , reverse voltage (v) fig. 4 typical junction capacitance r t = 25 c f = 1.0mhz j es4a - es4d e s4e - es4g es4j 2 of 2 es4a ? es4j es4a ? es4j z ibo seno electronic engineering co., ltd. www.senocn.com 1.0 2.0 25 75 100 50 125 150 175 i , a verage rectified current (a) o t , terminal temperature ( c) fi . 1 forward current deratin curve t 3.0 4. 0 0 20 40 60 1 10 100 i , peak forward surge current (a) fsm number of cycles at 60hz fig . 3 surg e current derating curve single half-sine-w ave (jedec method) 80 100 120 - - a l l d a t a s h e e t
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