tel. 1 - 973 - 377 - 9566 fax. 1 - 973 - 377 - 3078 133 kings road madison, e erse 0790 nited tates of america .americanmicrosemi.com 2016 american microsemiconductor, inc.? ecifications are suect to cange itout notice american microsemiconductor, inc. reseres rigt to mae canges to te roduct secifications and data in tis document itout notice. american microsemiconductor, inc. disclaims all and an arrant and liailit arising out of use or alication of an roduct. o license, exress or imlied to an intellectual roert rigts is granted tis document. nless oterise exressl indicated, american microsemiconductor, inc. roducts are not designed, tested or autoried for use in life - saing, medical, aircr aft naigation, communication, air traffic control and eaons sstems, nor in alications ere teir failure ma result in deat, ersonal inur andor roert damage. dekra certification inc. as9100c and iso 9001:2008 certificate no. 131519.01 ocument age 1 of 2 revised 05/2016 ? 500ma 8.0kv 4 0ns ultra - fast recovery high voltage silicon rectifier diodes introduce: ams high voltage silicon rectifier diode is made of high quality glass passivated chip and high reliability epoxy resin sealing structure . features: 1. high reliability design. 2. high voltage, large current. 3. hi gh frequency, fast recovery. 4. conform to rohs and sgs. applications: 1. high voltage multiplier circuit 2. high frequency switching power supply 3. general purpose high voltage rectifier. 4. laser power supply medical equipment mechanical data: 1. case: epoxy resin molding. 2. terminal: welding axis. 3. net weight: 2.55 grams (approx). shape display: size: (unit:mm) name: d o - 722 lead diameter 1 . 2mm 0.0 2 unit:mm maximum ratings and characteristics: (absolute maximum ratings) items symbols condition data value units repetitive peak re v erse voltage v rrm t a =25c 8.0 kv non - repetitive peak re v erse voltage v rsm t a =25c -- kv average forward current maximum i favm t a =55c 500 ma t oil =55c -- ma non - repetitive forward surge current i fsm t a =25c; 50hz half - sine wave; 8.3ms 20 a junction temperature t j 150 c allowable operation case temperature t c - 40~+150 c storage temperature t stg - 40~+150 c electrical characteristics: ta=25c (unless otherwise specified) items symbols condition data value units maximum forward voltage drop v fm at 25c; at i favm 1 2 v maximum reverse current i r1 at 25c; at v rrm 0.5 ua i r2 at 1 25 c; at v rrm 50 ua maximum reverse recovery time t rr at 25c; i f =0.5 a ; i r =i favm ; i rr =0.25 ma 4 0 ns junction capacitance c j at 25c; v r =0v; f=1mhz 7.5 pf ams - fob 500ma 8.0kv 4 0ns
tel. 1 - 973 - 377 - 9566 fax. 1 - 973 - 377 - 3078 133 kings road madison, e erse 0790 nited tates of america .americanmicrosemi.com 2016 american microsemiconductor, inc.? ecifications are suect to cange itout notice american microsemiconductor, inc. reseres rigt to mae canges to te roduct secifications and data in tis document itout notice. american microsemiconductor, inc. disclaims all and an arrant and liailit arising out of use or alication of an roduct. o license, exress or imlied to an intellectual roert rigts is granted tis document. nless oterise exressl indicated, american microsemiconductor, inc. roducts are not designed, tested or autoried for use in life - saing, medical, aircr aft naigation, communication, air traffic control and eaons sstems, nor in alications ere teir failure ma result in deat, ersonal inur andor roert damage. dekra certification inc. as9100c and iso 9001:2008 certificate no. 131519.01 ocument age 2 of 2 revised 05/2016 ? 500ma 8.0kv 4 0ns ultra - fast recovery high voltage silicon rectifier fig 1 fig 2 forward current derating curve reverse recovery measurement waveform typical data capture points: i f =0.5i r , i r ,i rr =0.25i r i r is typically the rated average forward current maximum (i favm ) of the d.u.t fig 3 non - repetitive surge current cycles (60hz) marking type code cathode mark ams - fob 500ma 8.0kv 4 0ns
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