052-6354 rev c 3-2012 apt50gp60ldl(g) typical performance curves parameter collector-emitter voltage gate-emitter voltage continuous collector current 7 @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 switching safe operating area @ t j = 150c total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. maximum ratings all ratings: t c = 25c unless otherwise specii e d . static electrical characteristics characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 1.0ma) gate threshold voltage (v ce = v ge , i c = 1ma, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 50a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 50a, t j = 125c) collector cut-of current (v ce = 600v, v ge = 0v, t j = 25c) 2 collector cut-of current (v ce = 600v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) symbol v (br)ces v ge(th) v ce(on) i ces i ges units volts a na symbol v ces v ge i c1 i c2 i cm ssoa p d t j ,t stg t l ratings 600 30 150 72 190 190a @ 600v 625 -55 to 150 300 unit volts amps watts c caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. min typ max 600 3 4.5 6 2.2 2.7 2.1 525 2750 100 the power mos 7 ? igbt used in this resonant mode combi is a new generation of high voltage power igbts. using punch through technology this igbt is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. apt50gp60ldl(g) 600v, 50a, v ce(on) = 2.2v typical resonant mode combi igbt ? c e g features low conduction loss low gate charge ultrafast tail current shutoff low forward diode voltage (v f ) ultrasoft recovery diode ssoa rated rohs compliant typical applications induction heating welding medical high power telecom resonant mode phase shifted bridge microsemi website - http://www.microsemi.com g c e downloaded from: http:///
052-6354 rev c 3-2012 apt50gp60ldl(g) 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4 e on1 is the clam ped inductive turn-on-energy of the igbt only, without the ef ect of a commutating diode reverse recovery current adding to the igbt turn-on loss. (see figure 24.) 5 e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switching loss. (see figures 21, 22.) 6 e of is the clamped inductive turn-of energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) 7 continuous current limited by package lead temperature. apt reserves the right to change, without notice, the specii cations and information contained herein. dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc ssoa t d(on) t r t d(of ) t f e on1 e on2 e of t d(on) t r t d(of ) t f e on1 e on2 e of test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 300v i c = 50a t j = 150c, r g = 4.3, v ge = 15v, l = 100h,v ce = 600v inductive switching (25c) v cc = 400v v ge = 15v i c = 50a r g = 4.3 t j = +25c inductive switching (125c) v cc = 400v v ge = 15v i c = 50a r g = 4.3 t j = +125c characteristic input capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller") charge switching safe operating area turn-on delay time current rise time turn-of delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-of switching energy 6 turn-on delay time current rise time turn-of delay time current fall time turn-on switching energy 4 4 turn-on switching energy (diode) 5 5 turn-of switching energy 6 min typ max 5700 465 30 7.5 165 40 50 190 19 36 85 60 465 835 635 19 36 115 85 465 1260 1060 unit pf v nc a ns j ns j thermal and mechanical characteristics unit c/w gm min typ max .20 .63 6.10 characteristic junction to case (igbt) junction to case (diode) package weight symbol r jc r jc w t downloaded from: http:///
052-6354 rev c 3-2012 apt50gp60ldl(g) typical performance curves bv ces , collector-to-emitter breakdown v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) voltage (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) 250s pulse test<0.5 % duty cycle 7060 50 40 30 20 10 0 100 9080 70 60 50 40 30 20 10 0 3.53.0 2.5 2.0 1.5 1.0 0.5 0 1.201.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 7060 50 40 30 20 10 0 1614 12 10 86 4 2 0 33.5 3 2.5 2 1.5 1 0.5 0 200180 160 140 120 100 8060 40 20 0 t j = 125c t j = 25c t j = -55c t j = 25c. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test <0.5 % duty cycle t j = 125c t j = 25c t j = -55c t j = 125c t j = 25c t j = -55c v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics(v ge = 15v) figure 2, output characteristics (v ge = 10v) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction temperature t j , junction temperature (c) t c , case temperature (c) figure 7, breakdown voltage vs. junction temperature figure 8, dc collector current vs case temperature 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 6 8 10 12 14 16 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150 v ce = 480v v ce = 300v v ce = 120v i c = 50a t j = 25c i c = 100a i c = 50a i c = 25a i c = 100a i c = 50a i c = 25a lead temperature limited downloaded from: http:///
052-6354 rev c 3-2012 apt50gp60ldl(g) v ge =15v,t j =125c v ge =15v,t j =25c v ce = 400v r g = 4.3 l = 100h switching energy losses (j) e on2 , turn on energy loss (j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (j) e off , turn off energy loss (j) t f, fall time (ns) t d (off) , turn-off delay time (ns) i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-of delay time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn of energy loss vs collector current r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junction temperature v ce = 400v t j = 25c or 125c r g = 4.3 l = 100h 140120 100 8060 40 20 0 120100 8060 40 20 0 35003000 2500 2000 1500 1000 500 0 40003500 3000 2500 2000 1500 1000 500 0 v ge = 15v 20 30 40 50 60 70 80 90 100 110 20 30 40 50 60 70 80 90 100 110 20 30 40 50 60 70 80 90 100 110 20 30 40 50 60 70 80 90 100 110 20 30 40 50 60 70 80 90 100 110 20 30 40 50 60 70 80 90 100 110 0 10 20 30 40 50 0 25 50 75 100 125 r g = 4.3, l = 100 h, v ce = 400v t j = 25 or 125c,v ge = 15v 2520 15 10 50 9080 70 60 50 40 30 20 10 0 40003500 3000 2500 2000 1500 1000 500 0 60005000 4000 3000 2000 1000 0 t j = 125c, v ge = 15v t j = 25c, v ge = 15v r g = 4.3, l = 100 h, v ce = 400v v ce = 400v v ge = +15v r g = 4.3 t j = 125c t j = 25c v ce = 400v v ge = +15v r g = 4.3 t j = 125c t j = 25c e on2, 100a e of , 100a v ce = 400v v ge = +15v t j = 125c e on2, 25a e of , 25a e on2, 50a e of , 50a e on2, 100a e of , 100a e on2, 25a e of , 25a e on2, 50a e of , 50a v ce = 400v v ge = +15v r g = 4.3 downloaded from: http:///
052-6354 rev c 3-2012 apt50gp60ldl(g) typical performance curves 0.200.16 0.12 0.08 0.04 0 z jc , thermal impedance (c/w) 0.3 0.7 single pulse rectangular pulse duration (seconds) figure 19a, maximum ef ective transient thermal impedance, junction-to-case vs pulse duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10,000 1,000 500100 5010 200180 160 140 120 100 8060 40 20 0 c, capacitance ( p f) i c , collector current (a) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure 17, capacitance vs collector-to-emitter voltage figure 18,minimim switching safe operating area 0 10 20 30 40 50 0 100 200 300 400 500 600 700 figure 19b, transient thermal impedance model 10 20 30 40 50 60 70 80 90 100 f max , operating frequency (khz) i c , collector current (a) figure 20, operating frequency vs collector current t j = 125 c t c = 75 c d = 50 %v ce = 667v r g = 5 220100 5010 c ies c oes c res 0.5 0.1 0.05 f max = min (f max , f max2 ) 0.05 f max1 = t d(on) + t r + t d(off) + t f p diss - p cond e on2 + e off f max2 = p diss = t j - t c r jc peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: 0.009080.0193 0.0658 0.004630.00218 0.0142 powe r (watts ) junctio n temp. ( c) rc model 0.0658 0.0142 case temperature. ( c) d = 0.9 .1055 .346 downloaded from: http:///
052-6354 rev c 3-2012 apt50gp60ldl(g) figure 22, turn-on switching waveforms and dei nitions figure 23, turn-of switching waveforms and dei nitions apt50dl60 i c a d.u.t. v ce figure 21, inductive switching test circui t v cc collector current collector voltage switching energy 5 % 10% gate voltage 10% t d(on) 5% t r 90% t j = 125 c 90% gate voltage collector voltage collector current 0 t f 90% 10% t d(off) switching energy t t j = 125 c downloaded from: http:///
052-6354 rev c 3-2012 apt50gp60ldl(g) typical performance curves characteristic / test conditions maximum average forward current (t c = 124c, duty cycle = 0.5) rms forward current (square wave, 50% duty) non-repetitive forward surge current (t j = 45c, 8.3ms) symbol i f (av) i f (rms) i fsm symbol v f characteristic / test conditions i f = 50a forward voltage i f = 100a i f = 50a, t j = 125c static electrical characteristics unit amps unit volts min typ max 1.25 1.6 2.0 1.25 apt50gp60ldl (g) 50 150320 dynamic characteristics maximum ratings all ratings: t c = 25c unless otherwise specii e d . ultrafast soft recovery anti-parallel diode min typ max - 52 - 399 - 1498 - 9 - - 649 - 3734 - 13 - - 284 - 5134 - 34 unit ns nc amps ns nc amps ns nc amps characteristic reverse recovery time reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current symbol t rr t rr q rr i rrm t rr q rr i rrm t rr q rr i rrm test conditions i f = 50a, di f /dt = -200a/ s v r = 400v, t c = 25 c i f = 50a, di f /dt = -200a/ s v r = 400v, t c = 125 c i f = 50a, di f /dt = -1000a/ s v r = 400v, t c = 125 c i f = 1a, di f /dt = -100a/ s, v r = 30v, t j = 25 c figure 1b, transient thermal impedance model 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1a. maximum effective transient thermal impedance, junction-to-case vs. pulse duration peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: z jc , thermal impedance (c/w) dissipated powe r (watts ) t j (c) t c (c) z ext are the external therma l impedances: case to sink, sink to ambient, etc. set to zero when modeling only the case to junction . z ext 0.316 0.312 0.00467 0.1483 downloaded from: http:///
052-6354 rev c 3-2012 apt50gp60ldl(g) typical performance curves -di f /dt, current rate of change (a/ s ) figure 5, reverse recovery current vs. current rate of change case temperature (c) figure 7, maximum average forward current vs. case temperature 0 100 200 300 400 500 600 700 0 200 400 600 800 1000 0 20 40 60 80 100 120 0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 30 35 40 45 0 200 400 600 800 1000 0 0.2 0.4 0.6 0.8 1.0 1.2 0 25 50 75 100 125 150 0 1000 2000 3000 4000 5000 6000 7000 8000 0 200 400 600 800 1000 duty cycle = 0.5 t j = 126c i rrm q rr t rr 100a 50a 25a 50a t j = 55c t j = 150c v f , anode-to-cathode voltage (v) figure 2, forward current vs. forward voltage i f , forward current (a) t j = 25c t j = 125c -di f /dt, current rate of change (a/ s ) figure 3, reverse recovery time vs. current rate of change t rr , collector current (a) q rr , reverse recovery charge (nc) t j , junction temperature (c) figure 6, dynamic parameters vs junction temperature k f , dynamic parameters (normalized to 1000a/ s) i rrm , reverse recovery current (a) i f(av) (a) 0 50 100 150 200 250 300 350 400 450 500 0 10 100 400 v r , reverse voltage (v) figure 8, junction capacitance vs. reverse voltage c j , junction capacitance (pf) t j = 125c v r = 400v t j = 125c v r = 400v -di f /dt, current rate of change (a/ s ) figure 4, reverse recovery charge vs. current rate of change t j = 125c v r = 400v 100a 25a 25a 100a 50a downloaded from: http:///
052-6354 rev c 3-2012 apt50gp60ldl(g) typical performance curves to-264 (l) package outline 19.51 (.768)20.50 (.807) 19.81 (.780)21.39 (.842) 25.48 (1.003)26.49 (1.043) 2.29 (.090)2.69 (.106) 0.76 (.030)1.30 (.051) 3.10 (.122)3.48 (.137) 4.60 (.181)5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019)0.84 (.033) collector eitter gate dimensions in millimeters and (inches) 2.29 (.090)2.69 (.106) 5.79 (.228)6.20 (.244) 2.79 (.110)3.18 (.125) 5.45 (.215) bsc 2-plcs. collector 4 3 1 2 5 5 zer o 1 2 3 4 di f /dt - rate of diode current change through zero crossing. i f - forward conduction current i rrm - maximum reverse recovery current . t rr - revers e r ecovery time, measured from zero crossing wher e diode q rr - area under the curve defined by i rrm and t rr . current goes from positive to negative, to the point at which the straight line through i rrm and 0.25 i rrm passes through zero . figure 9. diode test circui t figure 10, diode reverse recovery waveform and definition s 0.25 i rrm current transformer di f /dt adjus t d.u.t. +18v 0v t rr / q rr wavefor m slope = di m / dt 6 di m /dt - maximum rate of current increase during the trailing portion of t rr. 6 v r (cathode) (cathode) (anode) downloaded from: http:///
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