4 1 2 3 preliminary solid state devices, inc. spt165 features: data sheet #: TR0010a maximum ratings symbol units value v ebo 3 volts emitter-base voltage v cbo 45 volts collector-base voltage i c 10 collector current, t c # 150 o c collector-emitter voltage v ceo 45 mamps volts o c mw mw/ o c o c/w ?bv ceo 45v. ? very low leakage. ? high gain. ? stable reference voltage 0.002%/ o c from 0 to 70 o c. ? isolated case. ? hermetic, metal case with glass seals. ? 150 o c operating temperature. to-33 case outline: to-33 10 ma 45 volts npn (v ref ) transistor operating and storage temperature t j, t stg -55 to +150 250 2 thermal resistance, junction to case r 2 jc 500 total device dissipation @ t a = 25 o c derate above 25 o c p d i b, i z 6 base or zener current, t c # 150 o c mamps designer's data sheet note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404-7855 * fax: (562) 404-1773
solid state devices, inc. spt165 preliminary v 45 - bv ceo collector-emitter breakdown voltage * (i c = 1.0ma dc ) : a -1 collector cutoff current (v cb = 30v dc ) 10 120 h fe dc current gain* (i c = 500 : a dc , v ce = 3v dc ) v dc 6.3 7.7 v ref reference voltage * (v ce = 3v dc ) min max electrical characteristics symbol units *pulse test: pulse width = 300us, duty cycle = 2% i cbo 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404-7855 * fax: (562) 404-1773
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