APTGT100A1202G APTGT100A1202G C rev 1 october 2012 www.microsemi.com 1-5 all ratings @ t j = 25c unless otherwise specified absolute maximum ratings these devices are sens itive to electrostatic discharge. proper handling procedures should be follow ed. see application note apt0502 on www.microsemi.com 12 3 4 18 10 9 68 7 13 1614 1512 17 11 5 pins 1/2/3/4 ; 5/6/7/8 ; 11/12/13/14/15/16 must be shorted together symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v t c = 25c 140 i c continuous collector current t c = 80c 100 i cm pulsed collector current t c = 25c 200 a v ge gate C emitter voltage 20 v p d maximum power dissipation t c = 25c 480 w rbsoa reverse bias safe operating area t j = 125c 200a @ 1100v v ces = 1200v i c = 100a @ tc = 80c application ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? fast trench + field stop igbt3 technology - low voltage drop - low tail current - switching frequency up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - rbsoa and scsoa rated ? kelvin emitter for easy drive ? very low stray inductance ? high level of integration benefits ? outstanding performance at high frequency operation ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive t c of v cesat ? rohs compliant phase leg fast trench + field stop igbt3 p ower module downloaded from: http:///
APTGT100A1202G APTGT100A1202G C rev 1 october 2012 www.microsemi.com 2-5 electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 1200v 50 a t j = 25c 1.4 1.7 2.1 v ce(sat) collector emitter saturation voltage v ge =15v i c = 100a t j = 125c 2.0 v v ge(th) gate threshold voltage v ge = v ce , i c = 2 ma 5.0 5.8 6.5 v i ges gate C emitter leakage current v ge = 20v, v ce = 0v 400 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 7200 c oes output capacitance 400 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 300 pf q g gate charge v ge =15v, i c =100a v ce =600v 0.9 c t d(on) turn-on delay time 260 t r rise time 30 t d(off) turn-off delay time 420 t f fall time inductive switching (25c) v ge = 15v v bus = 600v i c = 100a r g = 3.9 ? 70 ns t d(on) turn-on delay time 290 t r rise time 50 t d(off) turn-off delay time 520 t f fall time inductive switching (125c) v ge = 15v v bus = 600v i c = 100a r g = 3.9 ? 90 ns e on turn on energy t j = 125c 10 e off turn off energy v ge = 15v v bus = 600v i c = 100a r g = 3.9 ? t j = 125c 10 mj i sc short circuit data v ge 15v ; v bus = 900v t p 10s ; t j = 125c 400 a r thjc junction to case thermal resistance 0.26 c/w reverse diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v i rm maximum reverse leakage current v r =1200v 50 a i f dc forward current tc = 80c 100 a t j = 25c 1.6 2.1 v f diode forward voltage i f = 100a v ge = 0v t j = 125c 1.6 v t j = 25c 170 t rr reverse recovery time t j = 125c 280 ns t j = 25c 9 q rr reverse recovery charge t j = 125c 18 c t j = 25c 5 e r reverse recovery energy i f = 100a v r = 600v di/dt =2000a/s t j = 125c 9 mj r thjc junction to case thermal resistance 0.48 c/w downloaded from: http:///
APTGT100A1202G APTGT100A1202G C rev 1 october 2012 www.microsemi.com 3-5 thermal and package characteristics symbol characteristic min typ max unit v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2 3 n.m wt package weight 75 g sp2 package outline (dimensions in mm) typical performance curve forward characteristic of diode t j =25c t j =125c t j =125c 0 50 100 150 200 0 0.4 0.8 1.2 1.6 2 2.4 v f (v) i f (a) hard switching zcs zvs 0 10 20 30 40 50 60 0 20 40 60 80 100 120 140 i c (a) fmax, operating frequency (khz) v ce =600v d=50% r g =3.9 ? t j =125c tc=75c operating frequency vs collector current maximum effective transient thermal impedance, junction to case vs pulse duration d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) diode downloaded from: http:///
APTGT100A1202G APTGT100A1202G C rev 1 october 2012 www.microsemi.com 4-5 output characteristics (v ge =15v) t j =25c t j =125c 0 50 100 150 200 01234 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =17v v ge =9v 0 50 100 150 200 01234 v ce (v) i c (a) t j = 125c transfert characteristics t j =25c t j =125c t j =125c 0 25 50 75 100 125 150 175 200 56789101112 v ge (v) i c (a) energy losses vs collector current eon eon eoff er 0 5 10 15 20 25 0 25 50 75 100 125 150 175 200 i c (a) e (mj) v ce = 600v v ge = 15v r g = 3.9 ? t j = 125c eon eoff er 0 5 10 15 20 25 0 5 10 15 20 25 gate resistance (ohms) e (mj) v ce = 600v v ge =15v i c = 100a t j = 125c switching energy losses vs gate resistance reverse bias safe operating area 0 40 80 120 160 200 240 0 300 600 900 1200 1500 v ce (v) i c (a) v ge =15v t j =125c r g =3.9 ? maximum effective transient thermal impedance, junction to case vs pulse duration d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt downloaded from: http:///
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