TO-251-3L plastic-encapsulate mosfets cjd01n80 n-channel power mosfet general description the cjd01n80 is an n-c hannel mode power mosfet using advanced technology to provide cost omers with planar stripe. this technology specializes in allowing a minimum on-state resistance and superior switching performance. it al so can withstand high energy pulse in the avalanche and commutation mode. the cjd01n80 is universally applied in high efficiency switch mode power supply. feature z excellent package for good heat dissipation z high switching speed z 100% avalanche tested application z power switching application z dc/dc converters maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds 800 gate-source voltage v gs 30 v continuous drain current i d 1 pulsed drain current i dm 4 a single pulsed avalanche energy (note1) e as 90 mj thermal resistance from junction to ambient r ja 100 /w junction temperature t j 150 storage temperature range t stg -55 ~+150 maximum lead temperature for soldering purposes , 1/8?from case for 5 seconds t l 260 TO-251-3L 1. gate 2. drain 3. source 1 of 3 sales@zpsemi.com www.zpsemi.com cjd01n80 a-2,feb,2014
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit off characteristics drain-source breakdown voltage v (br)dss v gs = 0v, i d =250a 800 v zero gate voltage drain current i dss v ds =800v, v gs =0v 10 a gate-body leakage current i gss v ds =0v, v gs = 30v 100 na on characteristics gate-threshold voltage v gs(th) v ds =v gs , i d =250a 3 5 v static drain-source on-resistance r ds(on) v gs =10v, i d =0.5a 13.5 ? forward transconductance (note2) g fs v ds =50v, i d =0.5a 0.75 s dynamic characteristics (note 3) input capacitance c iss 195 output capacitance c oss 26 reverse transfer capacitance c rss v ds =25v,v gs =0v,f =1mhz 3.5 pf switching characteristics (note 2,3) turn-on delay time t d (on) 30 turn-on rise time t r 60 turn-off delay time t d(off) 40 turn-off fall time t f v dd =400v, r g =25 ? , i d =1a 60 ns total gate charge q g 7.2 nc gate-source charge q gs 1.1 nc gate-drain charge q gd v ds =640v,v gs =10v,i d =1a 3.3 nc drain-source diode characteristics drain-source diode forward voltage v sd v gs = 0v, i s =1a 1.4 v continuous drain-source diode forward current i s 1 a pulsed drain-source diode forward current i sm 4 a notes : 1. i l =1a, v dd =50v, r g =25 ? ,starting t j =25 2. pulse test : pulse width 300s, duty cycle 2% 3. guaranteed by design, not subject to production 2 of 3 sales@zpsemi.com www.zpsemi.com cjd01n80 a-2,feb,2014
01234567 0.0 0.1 0.2 0.3 0.4 0.5 25 50 75 100 125 0 1 2 3 4 5 0 200 400 600 800 1000 1200 1400 0.01 0.1 1 345678910 0 5 10 15 20 25 30 35 40 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 25 30 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 v ds =10v pulsed drain current i d (a) gate to source voltage v gs (v) transfer characteristics t a =100 t a =25 i d =250ua threshold voltage threshold voltage v th (v) junction temperature t j ( ) 2 pulsed source current i s (a) source to drain voltage v sd (mv) v sd i s ?? t a =100 t a =25 pulsed i d =0.5a r ds(on) ?? v gs on-resistance r ds(on) ( ) gate to source voltage v gs (v) t a =100 t a =25 t a =25 pulsed on-resistance r ds(on) ( ) drain current i d (a) i d ?? r ds(on) v gs =10v v gs =5.5v pulsed output characteristics drain current i d (a) drain to source voltage v ds (v) v gs = 6v 8v 10v v gs =5v 3 of 3 sales@zpsemi.com www.zpsemi.com cjd01n80 a-2,feb,2014
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