t4 - lds -0 296 rev . 2 (5 /2/13 ) ?201 3 microsemi corporati on page 1 of 4 NJF6514 and njf6515 n-channel, j- fet d epletion m ode t ransistor screened in reference to mil - prf - 19500 description the NJF6514 and njf6515 are ideal for functioning as very high frequency (vhf) small signal amplifiers . th e NJF6514 part number is similar to the mv 2n3 82 1. the njf6515 part number would be similar to a ms2n3821. to - 72 (to - 206af) package important: for the latest information, visit our website http://www.microsemi.com . features ? the NJF6514 is s creen ed to m v level in reference to mil - prf - 19500 jantx v level . ? the njf6515 is screened to ms level in reference to mil - prf - 19500 jans level. applications / benefits ? low - power transistor . ? leaded metal to - 72 package. maximum ratings @ t c = + 25 o c unless otherw ise noted msc C lawrence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions sym bol value unit junction and storage temp erature t j and t stg - 55 to +200 o c reverse gate - source voltage v gsr 50 v drain - source voltage v ds 50 v drain - gate voltage v dg 50 v total power dissipation @ t a = +25 oc (1) p t 3 00 mw forward gate current i gf 10 ma notes : 1. derate linearly 1. 7 mw/c for t a > +25 c. downloaded from: http:///
t4 - lds -0 296 rev . 2 (5 /2/13 ) ?201 3 microsemi corporati on page 2 of 4 NJF6514 and njf6515 mechanical and packaging ? case: ni p lated k ovar, ni c ap. ? terminals: au over ni p lated k ovar leads . ? marking: manufacturers id, d ate c ode, part n umber . ? polarity: see case outline on last page. ? weight: approximately 0.322 grams . ? see p ackage d imensions on last page. part nomenclature njf 651 4 n- channel, j -fet type number symbols & definitions symbol definition i d drain current, dc: the direct current into the drain terminal. i g gate current, dc: the direct current into the gate terminal. r g gate resistance. t a ambient temperature: the air temperature measured below a device, in an environment of substanti ally uniform te mperature, cooled only by natural air convection and not materially affected by reflectiv e and radiant surfaces. t c case temperature: the temperature measured at a specified location on the case of a device. i gf forward gate current: the direct current into the gate terminal with a forward gate - source voltage applied. v dg drain - gate voltage, dc: the dc voltage between the drain and gate terminals. v ds drain - source voltage, dc: the dc voltage between the drain and source terminals. v gsr reverse ga te - source voltage: the voltage between the gate and source terminals of such polarity that an increas e in its magnitude causes the channel resistance to increase. downloaded from: http:///
t4 - lds -0 296 rev . 2 (5 /2/13 ) ?201 3 microsemi corporati on page 3 of 4 NJF6514 and njf6515 electrical characteristics @ t a = +25 o c unless otherwise noted off charactertics parameters / test conditions symbol min. max. unit reverse gate - source breakdown voltage v ds = 0, i g = 1.0 a v (br)gssr 50 v reverse gate current v gs = 0, v ds = 30 v v gs = 0, v ds = 30 v v ds = 0, v gs = 2 0 v i gssr 0. 1 na zero- gate - voltage drain cur rent (pulsed) v gs = 0, v ds = 15 v i dss 0.5 2.5 ma gate - source voltage v ds = 15 v , i d = 50 a v gs 0.5 2.0 v gate - source cutoff voltage v ds = 15 v, i d = 0.5 na v gs(off) 4 .0 v dynamic characteristics parameters / test conditions symbol min. max. unit small- signal common source, short - circuit forward transfer admittance |y fs | 1500 4500 s v gs = 0, v ds = 15 v, f = 1.0 khz small- signal, common source, short - circuit output admittance |y os | 10 s v gs = 0, v ds = 15 v, f = 1.0 khz small- signal, common - source short - circuit input capacitance v gs = 0 v, v ds = 15 v, 100 khz f 1.0 mhz c iss 6.0 pf small- signal, common - source reverse transfer capacitance c rss 3 .0 pf v ds = 15 v, v gs = 0, 100 khz f 1.0 mhz common source spot noise figure nf 1 5.0 2. 5 db v gs = 0, v ds = 15 v, r g = 1 m ? f = 10 hz f = 1.0 khz downloaded from: http:///
t4 - lds -0 296 rev . 2 (5 /2/13 ) ?201 3 microsemi corporati on page 4 of 4 NJF6514 and njf6515 package dimensions notes: 1. dimensions are in inches. millimeters are given for general information only. 2. measured in the zone beyond 0 .250 (6.35 mm) from the seating p lane. 3. measured in the zone 0 .050 (1.27 mm) and 0 .250 (6.35 mm) from the seating plane. 4. when measured in a gauging plane 0 .054 + 0 .001, - 0 .000 (1.37 + 0 .3, - 0 .00 mm) before the seating plane of the transistor, maximum diameter leads shall be within 0 .00 7 ( 0 .18 mm) of their true location relative to a maximum width tab. smaller diameter leads shall fall within the outline of the maximum diameter lead to lerance. 5. the active elements are electrically insulated from the case. 6. all 4 leads. 7. lead 1 is the source, lead 2 is the drain, lead 3 is the gate, and lead 4 is the case. 8. symbol tl is measured from hd maximum. 9. in accordance with asme y14.5m, diameters are equivalent to x symbology. dimensions ltr inch millimeters notes min max min max cd 0 .178 0 .195 4.52 4.95 ch 0 .170 0 .210 4.32 5.33 hd 0 .209 0 .230 5.31 5.84 l1 - 0 .050 - 1.27 l2 0 .250 - 6.35 lc 0 .100 tp 2.54 tp ld 0 .016 0 .021 0.41 0.53 2, 6 ll 0 .500 0 .750 12.70 19.05 6 lu 0 .016 0 .019 0.41 0.48 3, 6 q - 0 .040 - 1.02 r - 0 .007 - 0.18 tl 0 .028 0 .048 0.71 1.22 8 tw 0 .036 0 .046 0.91 1.17 45 tp pin 1 emitter 2 base 3 collector 4 case downloaded from: http:///
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